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12 pages, 2429 KiB

Open AccessFeature PaperArticle

Gold Catalyst-Assisted Metal Organic Chemical Vapor Deposition of Bi-Te-Ni-Cu-Au Complex Thermoelectric Materials on Anodic Aluminum Oxide Nanoporous Template

by Yong X. Gan, Zhen Yu, Jeremy B. Gan, Wanli Cheng and Mingheng Li

Coatings 2018, 8(5), 166; https://doi.org/10.3390/coatings8050166 - 27 Apr 2018

Cited by 2 | Viewed by 4638

Abstract

Complex materials have unique thermal and electron transport properties. In this work, a novel catalyst-assisted metal organic chemical vapor deposition approach was employed to make Bi-Te-Ni-Cu-Au complex materials on an anodic aluminum oxide nanoporous substrate. Nickel acetate, copper nitrate, bismuth acetate, and tellurium [...] Read more.

Complex materials have unique thermal and electron transport properties. In this work, a novel catalyst-assisted metal organic chemical vapor deposition approach was employed to make Bi-Te-Ni-Cu-Au complex materials on an anodic aluminum oxide nanoporous substrate. Nickel acetate, copper nitrate, bismuth acetate, and tellurium (IV) chloride dissolved in N,N-dimethylformamide (DMF) were used as the metal sources for Ni, Bi, Cu, and Te, respectively. Hydrogen was used as the carrier gas. The anodic aluminum oxide substrate sputter-coated on a thin gold coating and was kept at 500 °C in a quartz tube in the reaction chamber. The chemical vapor deposition time was two hours. Scanning electron microscopy was used to reveal the morphology of the deposited materials. Due to metal catalyst assisted growth, the Bi-Te-Ni-Cu-Au materials were self-assembled into islands distributed fairly uniformly on the substrate. The mechanism for the morphological development of the materials was investigated. It was found that the Au nanoparticles facilitated the formation of the complex Bi-Te-Al-Ni-Cu materials. The prepared nanostructure has the highest absolute Seekbeck coefficient value of 260 µV/K, which is more than twice the value obtained from the bulk material. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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3924 KiB

Open AccessArticle

Suppression of Graphene Nucleation by Turning Off Hydrogen Supply Just before Atmospheric Pressure Chemical Vapor Deposition Growth

by Seiya Suzuki, Yoshifumi Terada and Masamichi Yoshimura

Coatings 2017, 7(11), 206; https://doi.org/10.3390/coatings7110206 - 20 Nov 2017

Cited by 11 | Viewed by 8490

Abstract

To exploit the extraordinary property of graphene in practical electrical and optical devices, it is necessary to produce large-sized, single-crystal graphene. Atmospheric pressure chemical vapor deposition (APCVD) on polycrystalline Cu surface is a promising scalable route of graphene synthesis but the unavoidable multiple [...] Read more.

To exploit the extraordinary property of graphene in practical electrical and optical devices, it is necessary to produce large-sized, single-crystal graphene. Atmospheric pressure chemical vapor deposition (APCVD) on polycrystalline Cu surface is a promising scalable route of graphene synthesis but the unavoidable multiple nucleation limits their reachable domain size. Here, we report that effective suppression of nucleation was achieved by only turning off hydrogen supply before introduction of the carbon source for graphene growth. The density of graphene decreased from 72.0 to 2.2 domains/cm² by turning off hydrogen for 15 min. X-ray photoelectron spectroscopy and Raman spectroscopy studies show that the Cu surface was covered with 3–4 nm thick highly crystalline Cu₂O, which would be caused by oxidation by residual oxidative gasses in the chamber during the turning off period. It was also revealed that elevating the temperature in Ar followed by annealing in H₂/Ar before turning off hydrogen led to the enlargement of the Cu domain, resulting in the further suppression of nucleation. By optimizing such growth parameters in the CVD process, a single-crystal graphene with ~2.6 mm in diameter was successfully obtained. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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2099 KiB

Open AccessArticle

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

by Raphaël Boichot, Danying Chen, Frédéric Mercier, Francis Baillet, Gaël Giusti, Thomas Coughlan, Mikhail Chubarov and Michel Pons

Coatings 2017, 7(9), 136; https://doi.org/10.3390/coatings7090136 - 1 Sep 2017

Cited by 15 | Viewed by 7988

Abstract

This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of the HVPE epitaxial growth [...] Read more.

This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of the HVPE epitaxial growth of AlN on (0001) sapphire will illustrate this approach. The study proposes the assessment of the influence of 15 process parameters on the quality or desired properties of the grown layers measured by 9 responses. The general method used is a screening design with the Hadamard matrix of order 16. For the first time in the growth of AlN by CVD, a reliable estimation of errors is proposed on the measured responses. This study demonstrates that uncontrolled release of condensed species from the cold wall is the main drawback of this process, explaining many properties of the grown layers that could be mistakenly attributed to other phenomena without the use of a DOE. It appears also that the size of nucleation islands, and its corollary, the stress state of the layer at room temperature, are key points. They are strongly correlated to the crystal quality. Due to the intrinsic limitations of the screening design, the complete optimization of responses cannot be proposed but general guidelines for hydride (or halogen) vapor phase epitaxy (HVPE) experimentations, in particular with cold wall apparatus, are given. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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1927 KiB

Open AccessArticle

Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor

by Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Chih-Yung Huang, Chu-Li Chao and Yi-Jiun Lin

Coatings 2017, 7(8), 112; https://doi.org/10.3390/coatings7080112 - 31 Jul 2017

Cited by 4 | Viewed by 5554

Abstract

A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium [...] Read more.

A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium nitride (GaN) mechanism reported in our previous study. The full governing equations for continuity, momentum, energy, and chemical reaction are solved numerically. The results show that the real operating parameters (susceptor temperature: 1188 °C or 1238 °C; pressure: 100–300 torr) affect thin-film uniformity, and the predicted growth rates agree reasonably well with the experimental data, indicating the accuracy of the projected chemical reaction mechanisms. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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11859 KiB

Open AccessArticle

The Effect of Deposition Parameters on the Growth Rate of Microcrystalline Diamond Powders Synthesized by HFCVD Method

by Tao Zhang and Ye Zou

Coatings 2017, 7(7), 95; https://doi.org/10.3390/coatings7070095 - 6 Jul 2017

Cited by 7 | Viewed by 5600

Abstract

Conventional diamond powders (<10 μm) are generally produced from crushing large-sized diamonds synthesized by high-pressure and high-temperature (HPHT) technique, whereas they have many morphological imperfections. In the present work, these powders are served as diamond seeds and regrown by hot filament chemical vapor [...] Read more.

Conventional diamond powders (<10 μm) are generally produced from crushing large-sized diamonds synthesized by high-pressure and high-temperature (HPHT) technique, whereas they have many morphological imperfections. In the present work, these powders are served as diamond seeds and regrown by hot filament chemical vapor deposition (HFCVD). Deposition parameters—such as the carbon concentration, substrate temperature, and bias current—which play a determined role in the homoepitaxial growth rate of micron diamonds, are investigated in their respective usual ranges. As shown in the experimental results, under the preconditions of maintaining the good morphology of crystals and inhibiting polycrystal growth, the growth rate of isolated diamond crystals can be controlled at 0.9 μm/h. Besides, the final improved powders have a wide range of particle sizes, which could fail to meet the requirements for commercial powders without the post-process of sieving. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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8619 KiB

Open AccessArticle

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

by Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Ching-Chiun Wang and Chih-Yung Huang

Coatings 2017, 7(3), 43; https://doi.org/10.3390/coatings7030043 - 15 Mar 2017

Cited by 5 | Viewed by 7316

Abstract

A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The mechanism models were developed through rate [...] Read more.

A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The mechanism models were developed through rate of production analysis. All of the results can be compared in one schematic diagram, and the differences among these three mechanisms are pronounced at high temperatures. The simplified reaction mechanisms were then used as input for a two-dimensional computational fluid dynamics code FLUENT, enabling the accurate prediction of growth rates. Validation studies are presented for two types of laboratory-scale reactors (vertical and horizontal). A computational study including thermal and flow field was also performed to investigate the fluid dynamic in those reactors. For each study, the predictions agree acceptably well with the experimental data, indicating the reasonable accuracy of the reaction mechanisms. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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3474 KiB

Open AccessArticle

Using an Atmospheric Pressure Chemical Vapor Deposition Process for the Development of V₂O₅ as an Electrochromic Material

by Dimitra Vernardou

Coatings 2017, 7(2), 24; https://doi.org/10.3390/coatings7020024 - 8 Feb 2017

Cited by 22 | Viewed by 6695

Abstract

Vanadium pentoxide coatings were grown by atmospheric pressure chemical vapor deposition varying the gas precursor ratio (vanadium (IV) chloride:water) and the substrate temperature. All samples were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, cyclic voltammetry, and transmittance measurements. The water flow [...] Read more.

Vanadium pentoxide coatings were grown by atmospheric pressure chemical vapor deposition varying the gas precursor ratio (vanadium (IV) chloride:water) and the substrate temperature. All samples were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, cyclic voltammetry, and transmittance measurements. The water flow rate was found to affect the crystallinity and the morphological characteristics of vanadium pentoxide. Dense stacks of long grains of crystalline oxide are formed at the highest amount of water utilized for a substrate temperature of 450 °C. Accordingly, it was indicated that for higher temperatures and a constant gas precursor ratio of 1:7, the surface morphology becomes flattened, and columnar grains of uniform size and shape are indicated, keeping the high crystalline quality of the material. Hence, it was possible to define a frame of operating parameters wherein single-phase vanadium pentoxide may be reliably expected, including a gas precursor ratio of 1:7 with a substrate temperature of >450 °C. The as-grown vanadium pentoxide at 550 °C for a gas precursor ratio of 1:7 presented the best electrochemical performance, including a diffusion coefficient of 9.19 × 10⁻¹¹ cm²·s⁻¹, a charge density of 3.1 mC·cm⁻², and a coloration efficiency of 336 cm²·C⁻¹. One may then say that this route can be important for the growth of large-scale electrodes with good performance for electrochromic devices. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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3518 KiB

Open AccessArticle

Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells

by Marquis Crose, Anh Tran and Panagiotis D. Christofides

Coatings 2017, 7(2), 22; https://doi.org/10.3390/coatings7020022 - 8 Feb 2017

Cited by 14 | Viewed by 6820

Abstract

This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport [...] Read more.

This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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3722 KiB

Open AccessArticle

Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

by Mohammad Afzaal, Heather M. Yates and John L. Hodgkinson

Coatings 2016, 6(4), 43; https://doi.org/10.3390/coatings6040043 - 12 Oct 2016

Cited by 7 | Viewed by 5829

Abstract

In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films [...] Read more.

In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200) plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200) preferred orientation. For low dopant concentration levels, atomic force microscope (AFM) studies showed a reduction in roughness (and lower optical haze) with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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2201 KiB

Open AccessLetter

Mn-Promoted Growth and Photoluminescence of Molybdenum Disulphide Monolayer

by Shengzhong Jin, Shichao Zhao, Jiaxin Weng and Yanfei Lv

Coatings 2017, 7(6), 78; https://doi.org/10.3390/coatings7060078 - 8 Jun 2017

Cited by 3 | Viewed by 5725

Abstract

Molybdenum disulphide (MoS₂) monolayer is a two-dimensional semiconductor material with potential applications in nano electronic devices. However, it is still a challenge to reproducibly synthesize single layer MoS₂ in high quality. Herein, we report the growth of monolayer of MoS [...] Read more.

Molybdenum disulphide (MoS₂) monolayer is a two-dimensional semiconductor material with potential applications in nano electronic devices. However, it is still a challenge to reproducibly synthesize single layer MoS₂ in high quality. Herein, we report the growth of monolayer of MoS₂ on the SiO₂/Si substrate with manganese heterogeneous nucleation. It was shown that the Mn promotes the growth of monolayer MoS₂ via heterogeneous nucleation. The growth temperature range expanded two-fold, the nucleation density increased as well. The monolayer prepared in the presence of Mn exhibits a unique red emission peak at 732 nm at room temperature compared to the sample in the absence of Mn. Full article

(This article belongs to the Special Issue Chemical Vapor Deposition)

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