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Coatings
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Thin Films: Application of Optical and Electronic Devices
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Thin Films: Application of Optical and Electronic Devices

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Characterization, Deposition and Modification".

Deadline for manuscript submissions: closed (20 July 2021) | Viewed by 13585

Special Issue Editor

Prof. Dr. Sung Gyu Pyo

E-Mail Website
Guest Editor
School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
Interests: new materials; processing and design; integrated systems; 3D integration; semiconductor materials; process and integration; battery and energy materials; microstructural evolution; characterization
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Thin film materials and processes are widely applied to optical devices, electronic devices, sensors, energy, displays, and especially semiconductors. These thin film materials are deposited using metals, ceramics, dielectrics, carbon materials, composites, and hybrid materials, and are widely applied to the electronics industry, such as the semiconductors mentioned above. In addition, these thin film materials are made by various processes such as PVD (Physically Vapor Deposition), CVD (Chemically Vapor Deposition), ALD (Atomic Layer Deposition), electroplating, and electroless plating. Development of high-performance optics, energy, sensors, displays, and semiconductors requires the development of new thin film materials and processes. Therefore, this Special Issue aims to publish a new thin film material and deposition process that can be applied to various new devices.

In particular, the topics of interest include but are not limited to:

  • Thin film materials;
  • Thin film processing;
  • Sensor materials and processing;
  • Optical and electronics materials.
Prof. Dr. Sung Gyu Pyo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

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Published Papers (4 papers)

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Research

11 pages, 3910 KiB  
Article
Effect of Pulsed Light Irradiation on Patterning of Reduction Graphene Oxide-Graphene Oxide Interconnects for Power Devices
by Eunmi Choi and Sunggyu Pyo
Coatings 2021, 11(9), 1042; https://doi.org/10.3390/coatings11091042 - 30 Aug 2021
Viewed by 1964
Abstract
Reduction graphene oxide (r-GO) lines on graphene oxide (GO) films can be prepared by a photocatalytic reduction and photothermal reduction method. A mechanism of partial GO reduction by pulsed photon energy is identified for preparing patterned rGO-GO films. The photocatalytic reduction method efficiently [...] Read more.
Reduction graphene oxide (r-GO) lines on graphene oxide (GO) films can be prepared by a photocatalytic reduction and photothermal reduction method. A mechanism of partial GO reduction by pulsed photon energy is identified for preparing patterned rGO-GO films. The photocatalytic reduction method efficiently reduces GO at low photon energies. The successful production of a patterned rGO-GO film without damage by the photo thermal reduction method is possible when an energy density of 6.0 or 6.5 J/m2 per pulse is applied to a thin GO film (thickness: 0.45 μm). The lowest resistance obtained for a photo-reduced rGO line is 0.9 kΩ sq−1. The GO-TiO2 pattern fabricated on the 0.23 μm GO-TiO2 composite sheet through the energy density of each pulse is 5.5 J/m2 for three pulses. Full article
(This article belongs to the Special Issue Thin Films: Application of Optical and Electronic Devices)
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9 pages, 2231 KiB  
Article
Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass
by Yang Li, Cheng Zhang, Zhiming Shi, Jingni Li, Qingyun Qian, Songtao Ling, Yufen Zhang, Xiaolin Zhu, Xingzhi Wu, Jinlei Zhang, Run Zhao, Yucheng Jiang, Qijian Zhang and Chunlan Ma
Coatings 2021, 11(3), 318; https://doi.org/10.3390/coatings11030318 - 10 Mar 2021
Cited by 4 | Viewed by 2110
Abstract
The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable [...] Read more.
The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D–A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices. Full article
(This article belongs to the Special Issue Thin Films: Application of Optical and Electronic Devices)
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23 pages, 4204 KiB  
Article
Optical Transmittance for Strongly-Wedge-Shaped Semiconductor Films: Appearance of Envelope-Crossover Points in Amorphous As-Based Chalcogenide Materials
by Juan José Ruiz-Pérez and Emilio Márquez Navarro
Coatings 2020, 10(11), 1063; https://doi.org/10.3390/coatings10111063 - 5 Nov 2020
Cited by 8 | Viewed by 3928
Abstract
In this work, we study the influence of the geometry of a thin film on its transmission spectrum, as measured on amorphous As-based chalcogenide layers grown onto 1-mm-thick soda-lime-silica glass substrates. A new method is suggested for a comprehensive optical characterization of the [...] Read more.
In this work, we study the influence of the geometry of a thin film on its transmission spectrum, as measured on amorphous As-based chalcogenide layers grown onto 1-mm-thick soda-lime-silica glass substrates. A new method is suggested for a comprehensive optical characterization of the film-on-substrate specimen, which is based upon some novel formulae for the normal-incidence transmittance of such a specimen. It has to be emphasized that they are not limited to the usual cases, where the refractive index, n, of the film and that of the thick transparent substrate, s, must obey: n2>>k2 and s2>>k2, respectively, where k stands for the extinction coefficient of the semiconductor. New expressions for the top and bottom envelopes of the transmission spectrum are also obtained. The geometry limitation usually found when characterizing strongly-wedge-shaped films, has been eliminated with the introduction of an appropriate parameter into the corresponding equations. The presence of crossover points in the top and bottom envelopes of the transmission spectrum, for these strongly-wedge-shaped chalcogenide samples, has been both theoretically predicted and experimentally confirmed. Full article
(This article belongs to the Special Issue Thin Films: Application of Optical and Electronic Devices)
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14 pages, 6095 KiB  
Article
Fabrication of Large Area Ag Gas Diffusion Electrode via Electrodeposition for Electrochemical CO2 Reduction
by Seonhwa Oh, Hyanjoo Park, Hoyoung Kim, Young Sang Park, Min Gwan Ha, Jong Hyun Jang and Soo-Kil Kim
Coatings 2020, 10(4), 341; https://doi.org/10.3390/coatings10040341 - 1 Apr 2020
Cited by 13 | Viewed by 5010
Abstract
For the improvement for the commercialization of electrochemical carbon dioxide (CO2) conversion technology, it is important to develop a large area Ag gas diffusion electrode (GDE), that exhibits a high electrochemical CO2 conversion efficiency and high cell performance in a [...] Read more.
For the improvement for the commercialization of electrochemical carbon dioxide (CO2) conversion technology, it is important to develop a large area Ag gas diffusion electrode (GDE), that exhibits a high electrochemical CO2 conversion efficiency and high cell performance in a membrane electrode assembly (MEA)-type CO2 electrolyzer. In this study, the electrodeposition of Ag on a carbon-paper gas diffusion layer was performed to fabricate a large area (25.5 and 136 cm2) Ag GDE for application to an MEA-type CO2 electrolyzer. To achieve uniformity throughout this large area, an optimization of the electrodeposition variables, such as the electrodes system, electrodes arrangement, deposition current and deposition time was performed with respect to the total electrolysis current, CO production current, Faradaic efficiency (FE), and deposition morphology. The optimal conditions, that is, galvanostatic deposition at 0.83 mA/cm2 for 50 min in a horizontal, two-electrode system with a working-counter electrode distance of 4 cm, did ensure a uniform performance throughout the electrode. The position-averaged CO current densities of 2.72 and 2.76 mA/cm2 and FEs of 83.78% (with a variation of 3.25%) and 82.78% (with a variation of 8.68%) were obtained for 25.5 and 136 cm2 Ag GDEs, respectively. The fabricated 136 cm2 Ag GDE was further used in MEA-type CO2 electrolyzers having an active geometric area of 107.44 cm2, giving potential-dependent CO conversion efficiencies of 41.99%–57.75% at Vcell = 2.2–2.6 V. Full article
(This article belongs to the Special Issue Thin Films: Application of Optical and Electronic Devices)
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