Metal–Semiconductor Photodetector
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Hybrid and Composite Crystalline Materials".
Deadline for manuscript submissions: closed (10 May 2023) | Viewed by 4553
Special Issue Editors
Interests: epitaxial growth of group IV semiconductors; fabrication and characterization of optoelectronic devices
Interests: optoelectronic properties of group IV devices; silicon photonics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Photodetectors have attracted increasing attention in the past few decades, primarily due to their wide applications in various purposes, such as image sensing, optical communication, biomedical imaging, and motion detection. Metal–semiconductor photodetectors have attracted much attention due to their figures of merit, including fabrication simplicity and direct compatibility with modern high-speed integrated circuitry. Recently, efforts have been made to improve the responsivity, detectivity, and other key parameters of photodetectors.
To bring additional attention to this area of research, this Special Issue highlights progress reports, reviews, and original research articles on “Metal–Semiconductor Photodetectors”; potential topics include, but are not limited to:
- Manufacturing process for metal–semiconductor photodetectors.
- Metallic nanostructures in metal–semiconductor photodetectors.
- Carrier transport in metal–semiconductor photodetectors.
- Internal gain mechanism in metal–semiconductor photodetectors.
- Defects and dislocations near metal–semiconductor interfaces and their influence on photodetection properties.
Prof. Dr. Liming Wang
Prof. Dr. Huiyong Hu
Guest Editors
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Keywords
- carrier transport.
- opto-electronic properties
- internal gain mechanism
- interface defect and dislocation
- nanostructures
- metal–semiconductor contact
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