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Crystals
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Semiconductor Nanostructures: Growth, Properties and Emerging Applications
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Semiconductor Nanostructures: Growth, Properties and Emerging Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystalline Metals and Alloys".

Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 7600

Special Issue Editors

Dr. Sergey Balakirev

E-Mail Website
Guest Editor
INEEE, Southern Federal University, Rostov-on-Don, 347922 Taganrog, Russia
Interests: epitaxy; crystal growth; semiconductors; A3B5; thin films; heterostructures; nanostructures; quantum dots; self-assembling; mathematical modelling; stochastic simulation; Monte Carlo method
Dr. Maxim Solodovnik

E-Mail Website
Guest Editor
INEEE, Southern Federal University, Rostov-on-Don, 347922 Taganrog, Russia
Interests: epitaxy; self-organization; heterostructures; nanostructures; quantum well; quantum dot; nanowire; growth processes; A3B5; nano patterning

Special Issue Information

Dear Colleagues,

The development of the devices of nanoelectronics, photonics, and quantum technologies inevitably requires a transition to methods and approaches based on the active use of semiconductor nanostructures: quantum wells, quantum dots, nanowires, etc., as well as complex systems based on them. On the one hand, this opens up wide opportunities for improving the key device characteristics (sizes, speed, performance, power consumption, etc.) by using the unique properties of these structures. On the other hand, this significantly toughens the requirements not only for parameters of these nanostructures (morphology, structure, chemical composition, etc.), but also for their reproducibility. In this regard, there is a need to develop methods and technological processes that can efficiently control the nanostructure formation, providing a high level of control not only over the uniformity and reproducibility of the parameters, but also over the shape, size, position and degree of isolation of each functionally active element separately.

This Special Issue, “Semiconductor Nanostructures: Growth, Properties and Emerging Applications”, will be a collection of full papers, short communications and review papers focusing on recent progress in the field of semiconductor nanostructure growth, characterization and simulation as well as elements and devices based on them.

Dr. Sergey Balakirev
Dr. Maxim Solodovnik
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductors
  • epitaxy
  • self-organization
  • nanostructures
  • quantum dots
  • quantum wells
  • nanowires
  • heterostructures
  • growth processes
  • characterization

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Published Papers (3 papers)

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Research

12 pages, 2395 KiB  
Article
Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement
by Xiangjun Shang, Shulun Li, Hanqing Liu, Ben Ma, Xiangbin Su, Yao Chen, Jiaxin Shen, Huiming Hao, Bing Liu, Xiuming Dou, Yang Ji, Baoquan Sun, Haiqiao Ni and Zhichuan Niu
Crystals 2021, 11(10), 1194; https://doi.org/10.3390/cryst11101194 - 30 Sep 2021
Cited by 3 | Viewed by 2223
Abstract
The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS [...] Read more.
The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS = X1−X2) and show D3h symmetric excitons. The lowest FSS obtained is 3.9 μeV with the lowest energy X state (LX) anticlockwise rotate from [1–10] (i.e., zero FSS will be crossed in a proper field). The lateral field projection induces a large eh separation and various FSS, LX, and emission intensity polarization. The lateral field along [1–10] breaks the X1–X2 wavefunction degeneracy for independent HH and VV cascade emissions with robust polarization correlation. With FSS ~4 μeV and T1 ~0.3 ns fastened in a distributed Bragg reflector cavity, polarization-resolved XX–X cross-correlations show fidelity ~0.55 to a maximal entangled state |HH> + |VV>. A higher fidelity and zero FSS will be obtained in the hybrid QD structure with a junction field integrated to tune the FSS and a sub-bandgap excitation to avoid influences from electrons in the barrier. Full article
(This article belongs to the Special Issue Semiconductor Nanostructures: Growth, Properties and Emerging Applications)
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10 pages, 3851 KiB  
Article
Coupled InGaAs Quantum Dots for Electro-Optic Modulation
by Kuei-Ya Chuang, Te-En Tzeng and Tsong-Sheng Lay
Crystals 2021, 11(10), 1159; https://doi.org/10.3390/cryst11101159 - 23 Sep 2021
Cited by 2 | Viewed by 1877
Abstract
We investigated the growth of vertically coupled In0.75Ga0.25As quantum dots (QDs) by varying the GaAs spacer thickness (d). Vertically-aligned triple-layer QDs of uniform size and highest accumulated strain are formed with d = 5 nm. The electroluminescence [...] Read more.
We investigated the growth of vertically coupled In0.75Ga0.25As quantum dots (QDs) by varying the GaAs spacer thickness (d). Vertically-aligned triple-layer QDs of uniform size and highest accumulated strain are formed with d = 5 nm. The electroluminescence (EL) characteristics for In0.75Ga0.25As QDs show an emission spectrum at optical wavelength (λ) of 1100−1300 nm. The EL spectra exhibit the highest optical gain at λ ~ 1200 nm, and the narrowest FWHM = 151 nm of the sample with d = 5 nm at injection current = 20 mA. Fabry–Perot measurements at λ = 1515 nm of TE and TM polarizations were carried out to investigate the electro-optic modulation for a single-mode ridge waveguide consisting of vertically-coupled triple-layer In0.75Ga0.25As QDs (d = 5 nm). The linear (r) and quadratic (s) electro-optic coefficients are r = 2.99 × 10−11 m/V and s = 4.10 × 10−17 m2/V2 for TE polarization, and r = 1.37 × 10−11 m/V and s = 3.2 × 10−17 m2/V2 for TM polarization, respectively. The results highlight the potential of TE/TM lightwave modulation by InGaAs QDs at photon energy below energy band resonance. Full article
(This article belongs to the Special Issue Semiconductor Nanostructures: Growth, Properties and Emerging Applications)
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13 pages, 3252 KiB  
Article
Copper Oxide Films Deposited by Microwave Assisted Alkaline Chemical Bath
by Reina Galeazzi Isasmendi, Isidro Juvenal Gonzalez Panzo, Crisóforo Morales-Ruiz, Román Romano Trujillo, Enrique Rosendo, Iván García, Antonio Coyopol, Godofredo García-Salgado, Rutilo Silva-González, Iván Oliva Arias and Carolina Tabasco Novelo
Crystals 2021, 11(8), 968; https://doi.org/10.3390/cryst11080968 - 17 Aug 2021
Cited by 4 | Viewed by 2796
Abstract
Copper oxide (CuO) films were deposited onto glass substrates by the microwave assisted chemical bath deposition method, and varying the pH of the solution. The pH range was varied from 11.0 to 13.5, and the effects on the film properties were studied. An [...] Read more.
Copper oxide (CuO) films were deposited onto glass substrates by the microwave assisted chemical bath deposition method, and varying the pH of the solution. The pH range was varied from 11.0 to 13.5, and the effects on the film properties were studied. An analytical study of the precursor solution was proposed to describe and understand the chemical reaction mechanisms that take place in the chemical bath at certain pH to produce the CuO film. A series of experiments were performed by varying the parameters of the analytical model from which the CuO films were obtained. The crystalline structure of the CuO films was studied using X-ray diffraction, while the surface morphology, chemical composition, and optical band-gap energy were analyzed by scanning electron microscopy, X-ray photoelectron spectroscopy, and UV–Vis spectrophotometry, respectively. The CuO films obtained exhibited a monoclinic crystalline phase, nanostructured surface morphology, stoichiometric Cu/O ratio of 50/50 at%, and band-gap energy value of 1.2 eV. Full article
(This article belongs to the Special Issue Semiconductor Nanostructures: Growth, Properties and Emerging Applications)
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