Thermal Management of Electronic Packaging

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (30 November 2022) | Viewed by 9136

Special Issue Editors


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Guest Editor
Center of Flow Simulation (CFS), Department of Mechanical and Process Engineering, Duesseldorf University of Applied Sciences, D-40476 Duesseldorf, Germany
Interests: computational methods; combustion; fire; turbulence; multi-phase flows; environmental flow; fluid machinery; biofluid dynamics
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Guest Editor
School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore
Interests: data center cooling; electronic cooling; thermal management of electronic packaging; energy conversion; thermodynamic cycles; thermoeconomics
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Special Issue Information

Dear Colleagues,

Recent developments in electronic devices and components have not only increased their operability but have also made them energy-intensive. They are also expected to sustain their performance under uninterrupted operating conditions. Compared to the past, electronic components have higher heat generation levels that make their thermal management more critical, in order to overcome potential failures and maintain safety concerns. Therefore, much effort has been invested in improving the thermal management performance of electronic packaging by scientists, researchers, and engineers. Some of these endeavours aim to increase the efficiency of traditional and existing solutions such as air-cooled systems, whilst some studies focus on more energy-intensive thermal management solutions like liquid-cooled systems. In addition, thermal energy storage (latent or sensible) has also been proposed as one of the new ways to control heat generation from electronic devices. Since the proposed solutions are expected to be as economically feasible as the existing systems, techno- and thermo-economic assessments of the proposed solutions also play crucial roles for sustainable thermal management processes of the electronic packaging.

In light of the foregoing facts, this Special Issue focuses on innovative solutions, novel contributions, critical reviews, case studies, or theoretical models of Thermal Management of Electronic Packaging studies from microchip-level to room-level (including data center cooling solutions). The invited topics include, but are not limited to, thermodynamic (energy and exergy) analysis; heat transfer enhancement; system design and optimization; thermo- and/or techno-economic assessments of the air-cooled and liquid-cooled solutions. Thermal energy store via sensible or latent heat mechanisms is also welcome in the Special Issue.

Prof. Dr.-Ing. habil. Ali Cemal Benim
Dr. Barış Burak KANBUR
Guest Editors

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Keywords

  • Electronic packaging
  • Electronic cooling
  • Data center cooling
  • Thermal management
  • Thermodynamic analysis
  • Enhanced heat transfer
  • Thermal energy storage
  • Thermoeconomics
  • Techno-economics

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Published Papers (2 papers)

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Research

12 pages, 9155 KiB  
Article
Study of Thermal Stress Fluctuations at the Die-Attach Solder Interface Using the Finite Element Method
by Luchun Yan, Jiawen Yao, Yu Dai, Shanshan Zhang, Wangmin Bai, Kewei Gao, Huisheng Yang and Yanbin Wang
Electronics 2022, 11(1), 62; https://doi.org/10.3390/electronics11010062 - 25 Dec 2021
Cited by 8 | Viewed by 4660
Abstract
Solder joints in electronic packages are frequently exposed to thermal cycling in both real-life applications and accelerated thermal cycling tests. Cyclic temperature leads the solder joints to be subjected to cyclic mechanical loading and often accelerates the cracking failure of the solder joints. [...] Read more.
Solder joints in electronic packages are frequently exposed to thermal cycling in both real-life applications and accelerated thermal cycling tests. Cyclic temperature leads the solder joints to be subjected to cyclic mechanical loading and often accelerates the cracking failure of the solder joints. The cause of stress generated in thermal cycling is usually attributed to the coefficients of thermal expansion (CTE) mismatch of the assembly materials. In a die-attach structure consisting of multiple layers of materials, the effect of their CTE mismatch on the thermal stress at a critical location can be very complex. In this study, we investigated the influence of different materials in a die-attach structure on the stress at the chip–solder interface with the finite element method. The die-attach structure included a SiC chip, a SAC solder layer and a DBC substrate. Three models covering different modeling scopes (i.e., model I, chip–solder layer; model II, chip–solder layer and copper layer; and model III, chip–solder layer and DBC substrate) were developed. The 25–150 °C cyclic temperature loading was applied to the die-attach structure, and the change of stress at the chip–solder interface was calculated. The results of model I showed that the chip–solder CTE mismatch, as the only stress source, led to a periodic and monotonic stress change in the temperature cycling. Compared to the stress curve of model I, an extra stress recovery peak appeared in both model II and model III during the ramp-up of temperature. It was demonstrated that the CTE mismatch between the solder and copper layer (or DBC substrate) not only affected the maximum stress at the chip–solder interface, but also caused the stress recovery peak. Thus, the combined effect of assembly materials in the die-attach structure should be considered when exploring the joint thermal stresses. Full article
(This article belongs to the Special Issue Thermal Management of Electronic Packaging)
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15 pages, 7158 KiB  
Article
Thermal Analyses of Reactor under High-Power and High-Frequency Square Wave Voltage Based on Improved Thermal Network Model
by Li Shen, Fan Xie, Wenxun Xiao, Huayu Ji and Bo Zhang
Electronics 2021, 10(11), 1342; https://doi.org/10.3390/electronics10111342 - 3 Jun 2021
Cited by 3 | Viewed by 2419
Abstract
In order to quickly calculate the stable temperature of a reactor driven by high-frequency and high-power pulse voltage, an improved thermal network model suitable for a reactor under this condition is established in this paper. In power electronic equipment, the maximum temperature of [...] Read more.
In order to quickly calculate the stable temperature of a reactor driven by high-frequency and high-power pulse voltage, an improved thermal network model suitable for a reactor under this condition is established in this paper. In power electronic equipment, the maximum temperature of the reactor is usually concentrated in its internal core. Moreover, with the increasing demand of high-power density in power electronic devices, the structure design of the reactor is more compact, and the internal magnetic field will affect the accuracy of the temperature-measuring device. Therefore, it is difficult to measure the internal temperature rise of the reactor directly. However, its stable operating temperature could be analyzed by the thermal network modeling methods and heat transfer analysis tool. Therefore, a convenient and accurate thermal network model of the reactor under high-frequency and high-power square wave voltage is established by considering the equivalent thermal resistance of the winding, the three-dimensional geometrical effect of the core and the effect of the high-frequency repeated pulse stress on the thermal penetration depth. Additionally, the internal temperature of the reactor can be obtained through the external temperature in terms of the presented model. To verify the feasibility of the thermal network model, the corresponding multiphysical field finite element simulation and the reactor temperature measurement platform is built. The simulation and experimental results show that the proposed thermal network model has a high precision and fast calculation speed, and it is an effective tool for thermal analysis of the reactor. Full article
(This article belongs to the Special Issue Thermal Management of Electronic Packaging)
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