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Advanced Materials for Sustainable Energy Applications

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "D1: Advanced Energy Materials".

Deadline for manuscript submissions: closed (11 July 2023) | Viewed by 8072

Special Issue Editors

School of Materials and Energy, Lanzhou University, Lanzhou 730000, China
Interests: functional nanodevice/electronics; interface polarization engineering; piezotronics; piezoelectrics; flexoelectrics; nanogenerator; piezo-phototronics; advanced materials
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
Interests: photoelectrochemistry of semiconductors; solar water splitting; LSPR of semiconductor nanocrystals; N2 photofixation

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Guest Editor
Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou 311100, China
Interests: image sensors; photodetectors; photovoltaics; multimode sensors; sensors for endoscopes

Special Issue Information

Dear Colleagues,

Society is still mostly powered by fossil fuels. An urgent requirement for sustainable energy and new energy conversion technologies that could provide humanity with a safe and sustainable future after the oil storage has gone. Materials with new structures and new functions have the greatest potential impact on the field of energy. Major advances in materials can give clean energy resources, as well as sustainable development that can play a significant role in providing new methods for collecting energy from different resources with less cost. This issue is dedicated to emerging applications of advanced materials in the areas of sustainable energy such as batteries, solar cells, fuel cells, nanogenerators, and energy storage devices. The main motivation behind this issue is to publish feature research in the abovementioned fields which are of importance to academic researchers, materials scientists, environmentalists, and industrialists.

Dr. Shuhai Liu
Dr. Zheng Wang
Dr. Leixin Meng
Guest Editors

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Keywords

  • self-powered nanodevices/nanosystems
  • piezoelectric nanogenerator
  • triboelectric nanogenerator
  • optoelectronic devices for efficient energy usage
  • photovoltaics
  • supercapacitors
  • batteries
  • fuel cells
  • hydrogen generation and storage

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Published Papers (4 papers)

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Research

11 pages, 6210 KiB  
Article
A ZnO Gas Sensor with an Abnormal Response to Hydrogen
by Hao Sun, Yachi Yao, Ruixuan Yang, Zhaonan Yan, Chen Cao, Yanwen Deng, Shengjiang Wu, Shuhai Liu, Qi Xu and Yong Qin
Energies 2023, 16(15), 5847; https://doi.org/10.3390/en16155847 - 7 Aug 2023
Cited by 5 | Viewed by 1575
Abstract
ZnO is a commonly used material for hydrogen gas sensors. In this study, a ZnO nanofiber film with a diameter of approximately 60 nm was synthesized by the electrospinning method. Compared to previously reported ZnO hydrogen gas sensors, an abnormal phenomenon was observed [...] Read more.
ZnO is a commonly used material for hydrogen gas sensors. In this study, a ZnO nanofiber film with a diameter of approximately 60 nm was synthesized by the electrospinning method. Compared to previously reported ZnO hydrogen gas sensors, an abnormal phenomenon was observed here, where the resistance of the ZnO nanofiber film increased upon exposure to hydrogen gas in the temperature range from 210 °C to 330 °C. The physical mechanism of this phenomenon was explored through microstructure analysis and DFT simulation calculations that showed a total charge transfer of 0.65 e for the hydrogen molecule. This study can push forward the understanding of ZnO hydrogen sensing. Full article
(This article belongs to the Special Issue Advanced Materials for Sustainable Energy Applications)
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11 pages, 2221 KiB  
Article
Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals
by Feng Jiang, Yiwei Duan, Jiawen Song and Zhe Luo
Energies 2023, 16(12), 4547; https://doi.org/10.3390/en16124547 - 6 Jun 2023
Cited by 2 | Viewed by 1220
Abstract
As a photoelectric material, the luminescent efficiency improvement of organic–inorganic perovskite material is a hot topic. This work fabricated a nanoporous distributed Bragg reflector based on GaN with a periodic structure using electrochemical etching methods. Considering the fact that hybrid perovskite materials are [...] Read more.
As a photoelectric material, the luminescent efficiency improvement of organic–inorganic perovskite material is a hot topic. This work fabricated a nanoporous distributed Bragg reflector based on GaN with a periodic structure using electrochemical etching methods. Considering the fact that hybrid perovskite materials are difficult to prepare on an inorganic GaN-based substrate, ultraviolet ozone treatment was implemented to enhance the surface activity of the prepared distributed Bragg reflector substrate. Cubic CH3NH3PbBr3 crystals with smooth surfaces and precise edges were successfully prepared on the ozone-treated distributed Bragg reflector substrate by a two-step immersion method in the air environment. The structural property of the prepared CH3NH3PbBr3 crystals was investigated using X-ray diffraction, scanning electron microscopy and Fourier-transform infrared spectroscopy. The structural analysis results showed that CH3NH3PbBr3 crystals grown on the prepared distributed Bragg reflector and reference substrates have the same structure, with a good crystal quality. The photoluminescence intensity of CH3NH3PbBr3 crystals grown on the distributed Bragg reflector was significantly enhanced. The enhancement is approximately 3.11-fold compared with CH3NH3PbBr3 crystals grown on the unetched reference GaN substrate. Moreover, there is a 7.2 nm spectral blue shift. The enhancement of the photoluminescence intensity could be attributed to the out-coupling of emission light in the prepared crystals, and the blue shift could be attributed to the stress relaxation caused by the nanoporous GaN structure of the distributed Bragg reflector substrate. Full article
(This article belongs to the Special Issue Advanced Materials for Sustainable Energy Applications)
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10 pages, 1986 KiB  
Article
Experimental Setup for Measurement of AC Loss in HTS under Rotating Magnetic Field
by Wafa Ali Soomro, Youguang Guo, Haiyan Lu, Jianxun Jin, Boyang Shen and Jianguo Zhu
Energies 2022, 15(21), 7857; https://doi.org/10.3390/en15217857 - 23 Oct 2022
Cited by 7 | Viewed by 1707
Abstract
High-temperature superconducting materials have shown great potential for the design of large-scale industry applications. However, they are complicated under AC conditions, resulting in penalties such as power loss or AC loss. This loss has to be considered in order to design reliable and [...] Read more.
High-temperature superconducting materials have shown great potential for the design of large-scale industry applications. However, they are complicated under AC conditions, resulting in penalties such as power loss or AC loss. This loss has to be considered in order to design reliable and efficient superconducting devices. Furthermore, when superconductors are used in rotating machines, they may be exposed to rotating magnetic fields, which is critical for the design of such machines. Existing AC loss measuring techniques are limited to measuring under one-dimensional AC magnetic fields or transport currents. Therefore, it is essential to develop and investigate robust experimental techniques to investigate the loss mechanism in HTS machines. In this paper, a new and novel experimental technique has been presented to measure AC loss in rotating magnetic field conditions. The loss under rotating magnetic fields is measured and compared by numerical modeling methods, and the results show a strong correlation with the numerical modeling and show the effectiveness of the experimental setup. Full article
(This article belongs to the Special Issue Advanced Materials for Sustainable Energy Applications)
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8 pages, 2084 KiB  
Article
MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness
by Jinbing Cheng, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan and Paul K. Chu
Energies 2022, 15(17), 6169; https://doi.org/10.3390/en15176169 - 25 Aug 2022
Cited by 3 | Viewed by 2172
Abstract
Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (Φ [...] Read more.
Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (ΦB) and contact resistance are obstacles hampering the fabrication of high-power MoS2 transistors. The electronic transport characteristics of MoS2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS2 channel and copper (Cu) metal–TiO2-MoS2 channel. Contact optimization is conducted by adjusting the thickness of the TiO2 interlayer between the metal and MoS2. The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO2 layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics. Full article
(This article belongs to the Special Issue Advanced Materials for Sustainable Energy Applications)
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