Driving, Reliability, and Applications of Wide Bandgap Power Devices and Hybrid Power Devices
A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "F: Electrical Engineering".
Deadline for manuscript submissions: 25 March 2025 | Viewed by 67
Special Issue Editors
Interests: electric drives and power electronic converters; active thermal control; fault diagnosis; model predictive control; electric vehicle technologies
Special Issues, Collections and Topics in MDPI journals
Interests: double active bridge; multi-port DC transformer; energy router; AC-DC hybrid distribution network
Special Issues, Collections and Topics in MDPI journals
Interests: power electronics; reliability analysis of power semiconductor devices and capacitors; research on intelligent sensing technology for the health status of traction converters in electric vehicles/high-speed trains; application of artificial intelligence technology in power electronics health status monitoring; research on key technologies for high-power satellite power supplies
Special Issue Information
Dear Colleagues，
Wide bandgap material-based third-generation power semiconductor devices, including silicon carbide and gallium nitride, have the following characteristics: a fast switching speed, reduced power losses, and high operating temperature. Their performance far exceeds that of existing silicon power devices, making it an important cornerstone for the green energy of the future. With the increasing maturity of wide bandgap power device technology, these devices will gradually replace the existing silicon power devices in various applications, such as new energy vehicles, data centers, rail transportation, smart grids, and new-generation mobile communications. This technology should greatly improve energy efficiency and is one of the key technologies affecting economic and social development. Based on this, this Special Issue focuses on the ontology characteristics of wide bandgap power semiconductor devices and their application technologies, aiming to present and disseminate the latest advancements related to the packaging, hybrid application with silicon-based devices, driving technology design, modeling, and reliability analysis of wide bandgap power devices.
Topics of interest for publication include, but are not limited to, the following:
- Switching characteristics analysis and gate drive technology of wide bandgap devices;
- Electrical and thermal characteristics, thermal management and life prediction technology of wide bandgap devices;
- Packaging design and reliability evaluation technology of wide bandgap device;
- Failure mechanism, aging modelling, safe operation domain description method, and reliability evaluation technology of wide bandgap device;
- Switching characteristics analysis and gate drive technology of hybrid devices;
- Electrical and thermal characteristics, thermal management and life prediction technology of hybrid devices;
- Cost and efficiency optimization technology based on hybrid devices;
- Coupling failure mechanism, aging law, safe operation domain description method and reliability evaluation technology of hybrid devices;
- Artificial intelligence and wide bandgap power devices, including research and application of artificial intelligence technology in design and optimization, control and optimization, fault diagnosis and prediction, etc.;
- Performance analysis and application cases of wide bandgap power electronic devices in extreme environments such as high temperature, high voltage, and high frequency;
- New power system applications, including solid-state circuit breakers, power electronic transformers, high-power charging converters, integrated converters for vehicle storage and charging, power quality control equipment, electric vehicle power conversion systems, etc.
Dr. Ping Liu
Dr. Fan Xiao
Dr. Yingzhou Peng
Guest Editors
Manuscript Submission Information
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Keywords
- wide bandgap devices
- electrical drives
- power devices
- hybrid power devices
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