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Modeling of Advanced Metal-Oxide-Semiconductor Devices
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Modeling of Advanced Metal-Oxide-Semiconductor Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (10 November 2022) | Viewed by 10852

Special Issue Editor

Dr. Aryan Afzalian

E-Mail Website
Guest Editor
Interuniversity Micro-Electronics Center at Leuven, Leuven, Belgium
Interests: quantum transport; atomistic modeling; nanoelectronic devices; low-dimensional material; topological insulator

Special Issue Information

Dear Colleagues,

Scaling has been the driving force of the electronic industry. Today, the Metal-Oxide-Semiconductor (MOS) transistor channel length has been scaled well below 20 nm. To mitigate short-channel effects, the transistor channel thickness has been scaled as well, and transistors have evolved to 3D multi-gate devices such as FINFETs, nanowires and nanosheets. Finally, novel materials—such as Ge, III-V, CNT, 2d and topological insulator materials—and innovative device concepts, including steep slope transistors—such as tunneling FETs (TFET), Cold-FETs, FerroFETs, or dynamically doped transistors (D2FETs)—have been proposed to maintain performance at reduced supply voltage or enable further downscaling.

This Special Issue is devoted to providing recent cutting-edge advances in modeling techniques and theoretical research for advanced nanoelectronic devices using innovative architectures and concepts or based on novel materials for ultra-scaled CMOS or beyond CMOS applications. These include but are not limited to the options mentioned above. The focus is on state-of-the-art modeling techniques (e.g., atomistic, multiscale and multiphysics), novel physics, electronic and transport properties and their impact on the device performance. This Special Issue especially welcomes submissions that study advanced atomistic and multiscale modeling techniques and novel or emerging device concepts, novel physics, and novel low-dimensional materials.

Dr. Aryan Afzalian
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanoelectronic device
  • beyond CMOS
  • steep-slope device
  • topological Insulator
  • low-dimensional material
  • two-dimensional material
  • atomistic modeling
  • multiscale modeling

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Published Papers (4 papers)

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Research

13 pages, 3846 KiB  
Article
The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport Study
by Elaheh Akhoundi, Michel Houssa and Aryan Afzalian
Materials 2023, 16(4), 1603; https://doi.org/10.3390/ma16041603 - 15 Feb 2023
Cited by 2 | Viewed by 2034
Abstract
We study, using non-equilibrium Green’s function simulations combined with first-principles density functional theory, the edge-state transport in two-dimensional topological insulators. We explore the impact of electron–phonon coupling on carrier transport through the protected states of two widely known topological insulators with different bulk [...] Read more.
We study, using non-equilibrium Green’s function simulations combined with first-principles density functional theory, the edge-state transport in two-dimensional topological insulators. We explore the impact of electron–phonon coupling on carrier transport through the protected states of two widely known topological insulators with different bulk gaps, namely stanene and bismuthene. We observe that the transport in a topological insulator with a small bulk gap (such as stanene) can be heavily affected by electron–phonon scattering, as the bulk states broaden into the bulk gap. In bismuthene with a larger bulk gap, however, a significantly higher immunity to electron–phonon scattering is observed. To mitigate the negative effects of a small bulk gap, finite-size effects are studied in stanene ribbons. The bulk gap increases in ultra-narrow stanene ribbons, but the transport results revealed no improvement in the dissipative case, as the states in the enlarged bulk gaps aren’t sufficiently localized. To investigate an application, we also used topological insulator ribbons as a material for field-effect transistors with side gates imposing a lateral electric field. Our results demonstrate that the lateral electric field could offer another avenue to manipulate the edge states and even open a gap in stanene ribbons, leading to an ION/IOFF of 28 in the ballistic case. These results shed light on the opportunities and challenges in the design of topological insulator field-effect transistors. Full article
(This article belongs to the Special Issue Modeling of Advanced Metal-Oxide-Semiconductor Devices)
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12 pages, 2151 KiB  
Article
Modeling Hydrodynamic Charge Transport in Graphene
by Arif Can Gungor, Stefan M. Koepfli, Michael Baumann, Hande Ibili, Jasmin Smajic and Juerg Leuthold
Materials 2022, 15(12), 4141; https://doi.org/10.3390/ma15124141 - 10 Jun 2022
Cited by 3 | Viewed by 2085
Abstract
Graphene has exceptional electronic properties, such as zero band gap, massless carriers, and high mobility. These exotic carrier properties enable the design and development of unique graphene devices. However, traditional semiconductor solvers based on drift-diffusion equations are not capable of modeling and simulating [...] Read more.
Graphene has exceptional electronic properties, such as zero band gap, massless carriers, and high mobility. These exotic carrier properties enable the design and development of unique graphene devices. However, traditional semiconductor solvers based on drift-diffusion equations are not capable of modeling and simulating the charge distribution and transport in graphene, accurately, to its full extent. The effects of charge inertia, viscosity, collective charge movement, contact doping, etc., cannot be accounted for by the conventional Poisson-drift-diffusion models, due to the underlying assumptions and simplifications. Therefore, this article proposes two mathematical models to analyze and simulate graphene-based devices. The first model is based on a modified nonlinear Poisson’s equation, which solves for the Fermi level and charge distribution electrostatically on graphene, by considering gating and contact doping. The second proposed solver focuses on the transport of the carriers by solving a hydrodynamic model. Furthermore, this model is applied to a Tesla-valve structure, where the viscosity and collective motion of the carriers play an important role, giving rise to rectification. These two models allow us to model unique electronic properties of graphene that could be paramount for the design of future graphene devices. Full article
(This article belongs to the Special Issue Modeling of Advanced Metal-Oxide-Semiconductor Devices)
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18 pages, 2086 KiB  
Article
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors
by Sara Fiore, Cedric Klinkert, Fabian Ducry, Jonathan Backman and Mathieu Luisier
Materials 2022, 15(3), 1062; https://doi.org/10.3390/ma15031062 - 29 Jan 2022
Cited by 4 | Viewed by 4095
Abstract
The encapsulation of single-layer 2D materials within hBN has been shown to improve the mobility of these compounds. Nevertheless, the interplay between the semiconductor channel and the surrounding dielectrics is not yet fully understood, especially their electron–phonon interactions. Therefore, here, we present an [...] Read more.
The encapsulation of single-layer 2D materials within hBN has been shown to improve the mobility of these compounds. Nevertheless, the interplay between the semiconductor channel and the surrounding dielectrics is not yet fully understood, especially their electron–phonon interactions. Therefore, here, we present an ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. The characteristics of two transistor configurations are compared to each other: one where hBN is treated as a perfectly insulating, non-vibrating layer and one where it is included in the ab initio domain as MoS2. In both cases, a reduction of the ON-state current by about 50% is observed as compared to the quasi-ballistic limit. Despite the similarity in the current magnitude, explicitly accounting for hBN leads to additional electron–phonon interactions at frequencies corresponding to the breathing mode of the MoS2-hBN system. Moreover, the presence of an hBN layer around the 2D semiconductor affects the Joule-induced temperature distribution within the transistor. Full article
(This article belongs to the Special Issue Modeling of Advanced Metal-Oxide-Semiconductor Devices)
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13 pages, 4626 KiB  
Article
Bandstructure and Size-Scaling Effects in the Performance of Monolayer Black Phosphorus Nanodevices
by Mirko Poljak and Mislav Matić
Materials 2022, 15(1), 243; https://doi.org/10.3390/ma15010243 - 29 Dec 2021
Cited by 11 | Viewed by 1952
Abstract
Nanodevices based on monolayer black phosphorus or phosphorene are promising for future electron devices in high density integrated circuits. We investigate bandstructure and size-scaling effects in the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors [...] Read more.
Nanodevices based on monolayer black phosphorus or phosphorene are promising for future electron devices in high density integrated circuits. We investigate bandstructure and size-scaling effects in the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors (FETs) using advanced theoretical and computational approaches. Material and device properties are obtained by non-equilibrium Green’s function (NEGF) formalism combined with a novel tight-binding (TB) model fitted on ab initio density-functional theory (DFT) calculations. We report significant changes in the dispersion, number, and configuration of electronic subbands, density of states, and transmission of PNRs with nanoribbon width (W) downscaling. In addition, the performance of PNR FETs with 15 nm-long channels are self-consistently assessed by exploring the behavior of charge density, quantum capacitance, and average charge velocity in the channel. The dominant consequence of W downscaling is the decrease of charge velocity, which in turn deteriorates the ON-state current in PNR FETs with narrower nanoribbon channels. Nevertheless, we find optimum nanodevices with W > 1.4 nm that meet the requirements set by the semiconductor industry for the “3 nm” technology generation, which illustrates the importance of properly accounting bandstructure effects that occur in sub-5 nm-wide PNRs. Full article
(This article belongs to the Special Issue Modeling of Advanced Metal-Oxide-Semiconductor Devices)
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