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High-Performance Semiconductor Materials for Efficient Photoelectric Devices
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High-Performance Semiconductor Materials for Efficient Photoelectric Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 March 2025 | Viewed by 865

Special Issue Editors

Dr. Qian Li

E-Mail Website
Guest Editor
Department of Photonics & Quantum Technology, Institute of Electronic Engineering of China Academy of Engineering Physics, Microsystem & Terahertz Research Center of CAEP, Chengdu 610200, China
Interests: ultraviolet and infrared photo detectors; compound semiconductor; photoelectronic device; nano photonics
Special Issues, Collections and Topics in MDPI journals
Dr. Feiliang Chen

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Interests: new nano air channel high frequency photoelectric device; photoelectric fusion millimeter wave terahertz information technology; semiconductor room temperature single photon source
Dr. Feng Xie

E-Mail Website
Guest Editor
Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230039, China
Interests: wide bandgap semiconductors; optoelectronic devices
Dr. Yudan Gou

E-Mail Website
Guest Editor
College of Electronics and Information Engineering, Sichuan University, Chengdu 610065, China
Interests: metal-organic chemical vapor depositio (MOCVD); solar cell; laser wireless power transmission (LWPT); laser power converters (LPCs); metamorphic buffer; tunnel junction; conversion efficiency; maximum power; output power; photonics; III-V semiconductor material; laserhttps://eie.scu.edu.cn/info/1046/12329.htm
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor materials are the cornerstone of various functional devices. In recent years, high-performance semiconductor materials such as single crystals, films, nanowires, quantum dots, and 2D materials have aroused widespread interest, offering unprecedented opportunities for the development of novel devices with enhanced functionalities. This Special Issue aims to collect original research articles and reviews in the state of the art of semiconductor materials, devices, and applications. Topics covered include, but are not limited to, the synthesis and growth of semiconductor materials, the characterization of semiconductor materials and functional structures, and the fabrication and characterization of semiconductor devices. It is our pleasure to invite you to submit a manuscript for this Special Issue. Reviews, mini-reviews, original articles, and short communications covering the most recent advances are welcome.

Dr. Qian Li
Dr. Feiliang Chen
Dr. Feng Xie
Dr. Yudan Gou
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • metal–organic chemical vapor deposition (MOCVD)
  • semiconductor nanomaterials
  • semiconductor optoelectronic materials
  • III-V semiconductor material
  • wide-band semiconductor materials and devices

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Published Papers (1 paper)

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Research

9 pages, 2358 KiB  
Article
Carbon and Silicon Impurity Defects in GaN: Simulating Single-Photon Emitters by First Principles
by Junxiao Yuan, Jinglei Du, Yidong Hou, Feiliang Chen and Qian Li
Materials 2024, 17(15), 3788; https://doi.org/10.3390/ma17153788 - 1 Aug 2024
Viewed by 718
Abstract
Defect single-photon emitters (SPE) in gallium nitride (GaN) have garnered great attentions in recent years due to the advantages they offer, including the ability to operate at room temperature, narrow emission linewidths, and high brightness. Nevertheless, the precise nature of the single-photon emission [...] Read more.
Defect single-photon emitters (SPE) in gallium nitride (GaN) have garnered great attentions in recent years due to the advantages they offer, including the ability to operate at room temperature, narrow emission linewidths, and high brightness. Nevertheless, the precise nature of the single-photon emission mechanism remains uncertain due to the multitude of potential defects that can form in GaN. In this work, our systematical investigation with the ab initio calculation indicates that carbon and silicon, as common dopants in gallium nitride, can interact with intrinsic defects in GaN and form new high-speed defect single-photon sources. Our findings identify a ternary defect NGaVNCN that possesses a short lifetime of less than 1 ns and a small zero-photon line (ZPL) of 864 nm. In other words, this defect can serve as a high-speed single photon source in the short wavelength window for fiber communication. In sharp contrast, the Si-supported defect NGaVNSiN has a higher unoccupied defect energy level which enters the conduction band and is therefore unsuitable for single photon emission. A systematic investigation has been conducted into the potential defects, thermal stability, and single-photon emission properties. The relaxation calculation and self-consistent calculations employed the Perdew–Burke–Ernzerhof exchange-correlation functional and Heyd–Scuseria–Ernzerhof exchange-correlation functional, respectively. These findings indicate the potential for high-performance single-photon sources through carbon or silicon doping of GaN. Full article
(This article belongs to the Special Issue High-Performance Semiconductor Materials for Efficient Photoelectric Devices)
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