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Organic Transistor

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 July 2014) | Viewed by 20374

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Guest Editor
Faculty of Science and Technology, University of Algarve, Gambelas Campus, 8005-139 Faro, Portugal
Interests: electrical characterization; electronic devices and materials; organic electronics; bioelectronics; sensors; resistive memories; electrical noise
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Special Issue Information

Dear Colleagues,

We are launching a Special Issue of the journal, Materials, that is entitled “Organic Transistors”. This issue will cover all experimental and theoretical aspects concerning organic transistors and their applications. Organic transistors are paving the way for a number of applications, such as smart tags, intelligent textiles, intelligent ticketing, diagnosis systems for biosensing, and biomedical applications. Some of these products require the development of high-volume deposition and patterning techniques, such as printing. These requirements have generated a lot of interest in developing suitable materials. Moreover, these manufacturing technologies have high process variability and low yield. Circuits have to be designed to tolerate device variations and the instability found in these manufacturing technologies.

This Special Issue aims to encourage and publish research concerning the challenges and opportunities associated with developing high-throughput, low-cost manufacturing methods for organic electronics. The topics listed below indicate the range of work that is relevant to the Special Issue:

•          Materials, interfaces, and architectures.

•          Large-area and/or high-volume deposition and patterning techniques.

•          Device characterization and applications.

•          Process variability, reliability, and yield.

•          Circuit design methodologies and  tools.

Prof.  Henrique Leonel Gomes
Guest Editor

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Published Papers (2 papers)

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1393 KiB  
Article
Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates
by Kornelius Tetzner, Indranil R. Bose and Karlheinz Bock
Materials 2014, 7(11), 7226-7242; https://doi.org/10.3390/ma7117226 - 29 Oct 2014
Cited by 12 | Viewed by 8972
Abstract
In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric [...] Read more.
In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor. Full article
(This article belongs to the Special Issue Organic Transistor)
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2283 KiB  
Communication
A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor
by Tsukuru Minamiki, Tsuyoshi Minami, Ryoji Kurita, Osamu Niwa, Shin-ichi Wakida, Kenjiro Fukuda, Daisuke Kumaki and Shizuo Tokito
Materials 2014, 7(9), 6843-6852; https://doi.org/10.3390/ma7096843 - 22 Sep 2014
Cited by 54 | Viewed by 10633
Abstract
A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target [...] Read more.
A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing. Full article
(This article belongs to the Special Issue Organic Transistor)
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