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Smart Materials for Bioelectronics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (10 March 2022) | Viewed by 9257

Special Issue Editor

Department of Electronic Engineering, Kyung Hee University, Yongin 17104, Republic of Korea
Interests: energy harvesting; carbon MEMS; advanced memory; bio device

Special Issue Information

Dear Colleagues,

As interest in extending the life span and living a healthy life increases, technologies of bioelectronics are actively discussed and studied today. The development of flexible electronics and wireless communication system accelerates the human-machine interaction and wearable electronics to discover strange symptoms by oneself.

Using transparent conductive film and flexible polymers, research of artificial skin and attachable electronics device are carried out operating without batteries. The elastomer actuator which expand and shrink by the high output voltage signal is emerged in the recent research. Additionally, this bioelectronics can be applied to numerous applications of artificial muscles, electroactive polymers, healthcare sensors, and smart actuators.

This Special Issue focuses on the smart materials for bioelectronics such as human-machine interaction device and wearable electronic device.

Assist. Prof. Daewon Kim
Guest Editor

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Keywords

  • bioelectronics
  • smart materials
  • sensors
  • actuators
  • human-machine interaction
  • artificial skin
  • wearable electronics

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Published Papers (3 papers)

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Research

14 pages, 4849 KiB  
Article
Self-Powered and Flexible Triboelectric Sensors with Oblique Morphology towards Smart Swallowing Rehabilitation Monitoring System
by Jonghyeon Yun, Hyunwoo Cho, Jihyeon Park and Daewon Kim
Materials 2022, 15(6), 2240; https://doi.org/10.3390/ma15062240 - 18 Mar 2022
Cited by 6 | Viewed by 1872
Abstract
With aging, disability of the body can easily occur because the function of the body is degraded. Especially, swallowing disorder is regarded as a crucial issue because patients cannot obtain the nutrients from food by swallowing it. Hence, the rehabilitation of swallowing disorder [...] Read more.
With aging, disability of the body can easily occur because the function of the body is degraded. Especially, swallowing disorder is regarded as a crucial issue because patients cannot obtain the nutrients from food by swallowing it. Hence, the rehabilitation of swallowing disorder is urgently required. However, the conventional device for swallowing rehabilitation has shown some limitations due to its external power source and internal circuit. Herein, a self-powered triboelectric nanogenerator for swallowing rehabilitation (TSR) is proposed. To increase the electrical output and pressure sensitivity of the TSR, the tilted reactive ion etching is conducted and the electrical output and pressure sensitivity are increased by 206% and 370%, respectively. The effect of the tilted reactive ion etching into the electrical output generated from the TSR is systematically analyzed. When the tongue is pressing, licking, and holding the TSR, each motion is successfully detected through the proposed TSR. Based on these results, the smart swallowing rehabilitation monitoring system (SSRMS) is implemented as the application and the SSRMS could successfully detect the pressing by the tongue. Considering these results, the SSRMS can be expected to be utilized as a promising smart swallowing rehabilitation monitoring system in near future. Full article
(This article belongs to the Special Issue Smart Materials for Bioelectronics)
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15 pages, 3840 KiB  
Article
E-Skin Development and Prototyping via Soft Tooling and Composites with Silicone Rubber and Carbon Nanotubes
by Josué García-Ávila, Ciro A. Rodríguez, Adriana Vargas-Martínez, Erick Ramírez-Cedillo and J. Israel Martínez-López
Materials 2022, 15(1), 256; https://doi.org/10.3390/ma15010256 - 30 Dec 2021
Cited by 5 | Viewed by 3417
Abstract
The strategy of embedding conductive materials on polymeric matrices has produced functional and wearable artificial electronic skin prototypes capable of transduction signals, such as pressure, force, humidity, or temperature. However, these prototypes are expensive and cover small areas. This study proposes a more [...] Read more.
The strategy of embedding conductive materials on polymeric matrices has produced functional and wearable artificial electronic skin prototypes capable of transduction signals, such as pressure, force, humidity, or temperature. However, these prototypes are expensive and cover small areas. This study proposes a more affordable manufacturing strategy for manufacturing conductive layers with 6 × 6 matrix micropatterns of RTV-2 silicone rubber and Single-Walled Carbon Nanotubes (SWCNT). A novel mold with two cavities and two different micropatterns was designed and tested as a proof-of-concept using Low-Force Stereolithography-based additive manufacturing (AM). The effect SWCNT concentrations (3 wt.%, 4 wt.%, and 5 wt.%) on the mechanical properties were characterized by quasi-static axial deformation tests, which allowed them to stretch up to ~160%. The elastomeric soft material’s hysteresis energy (Mullin’s effect) was fitted using the Ogden–Roxburgh model and the Nelder–Mead algorithm. The assessment showed that the resulting multilayer material exhibits high flexibility and high conductivity (surface resistivity ~7.97 × 104 Ω/sq) and that robust soft tooling can be used for other devices. Full article
(This article belongs to the Special Issue Smart Materials for Bioelectronics)
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7 pages, 1533 KiB  
Communication
Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3
by Jung Sub Lee, Tae Young Ahn and Daewon Kim
Materials 2019, 12(23), 3917; https://doi.org/10.3390/ma12233917 - 27 Nov 2019
Cited by 5 | Viewed by 3307
Abstract
Ammonium sulfide ((NH4)2S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH [...] Read more.
Ammonium sulfide ((NH4)2S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH4)2S. It was found that a 10% (NH4)2S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH4)2S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (Dit) proved that the growth of native oxide was suppressed. Full article
(This article belongs to the Special Issue Smart Materials for Bioelectronics)
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