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Micromachines
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GaN Heterostructure Devices: From Materials to Application
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GaN Heterostructure Devices: From Materials to Application

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 31 December 2024 | Viewed by 5779

Special Issue Editor

Prof. Dr. Baijun Zhang

E-Mail Website
Guest Editor
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510006, China
Interests: electronic device; biosensor; THz device

Special Issue Information

Dear Colleagues,

Gallium nitride and its related compound semiconductor materials (AlN, AlGaN, InGaN, InN) and heterostructures (AlGaN/GaN, InGaN/GaN, AlInGaN/GaN, etc.) are attractive wide-band semiconductor materials due to their unique characteristics. Their successful applications in solid-state lighting, power electronic devices, RF devices, UV-LED, Micro-LED, and ultraviolet photodetectors have promoted the rapid development of gallium nitride-based materials and devices. Gallium nitride-based materials also show great application potential in some interdisciplinary fields. In recent years, their application in the fields of biomedicine and brain neuroscience have been widely considered by researchers, due to their chemical stability and biological compatibility. This Special Issue will publish research papers and review articles focusing on recent advances in gallium nitride-based materials and devices, including novel applied research within the crossover sciences.

Prof. Dr. Baijun Zhang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • GaN
  • heterostructure
  • optoelectronic device
  • electronic device
  • biosensor
  • THz device

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Published Papers (5 papers)

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Research

10 pages, 3712 KiB  
Article
A Novel Isolation Approach for GaN-Based Power Integrated Devices
by Zahraa Zaidan, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, Luong Viet Phung, Camille Sonneville, Dominique Planson, Yvon Cordier, Frédéric Morancho and Hassan Maher
Micromachines 2024, 15(10), 1223; https://doi.org/10.3390/mi15101223 - 30 Sep 2024
Viewed by 1141
Abstract
This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant [...] Read more.
This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring electrical isolation between the two types of devices. We propose a new isolation method designed to prevent any degradation of the lateral transistor’s performance. Specifically, high voltage applied to the drain of the vertical GaN power FinFET can adversely affect the lateral GaN HEMT’s performance, leading to a shift in the threshold voltage and potentially compromising device stability and driver performance. To address this issue, we introduce a highly doped n+ GaN layer positioned between the epitaxial layers of the two devices. This approach is validated using the TCAD-Sentaurus simulator, demonstrating that the n+ GaN layer effectively blocks the vertical electric field and prevents any depletion or enhancement of the 2D electron gas (2DEG) in the lateral GaN HEMT. To our knowledge, this represents the first publication of such an innovative isolation strategy between vertical and lateral GaN devices. Full article
(This article belongs to the Special Issue GaN Heterostructure Devices: From Materials to Application)
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11 pages, 6649 KiB  
Article
Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement
by Zenghui Liu, Xiaobo Zhang, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Xin Li, Yisheng Liang, Lizhang Lin, Xiaodong Li, Wenbo Zhao, Xin Cao, Xinqiang Wang and Baijun Zhang
Micromachines 2024, 15(8), 959; https://doi.org/10.3390/mi15080959 - 27 Jul 2024
Viewed by 746
Abstract
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper. The temperature distribution inside the Schottky diode is discussed in detail under the coupling [...] Read more.
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper. The temperature distribution inside the Schottky diode is discussed in detail under the coupling condition of Joule heat and solid heat transfer. The effects of different substrates and substrate geometric parameters on the thermal characteristics of the Schottky diode chips with single and double-row anode arrangements are systematically analyzed. Compared with that of the chip with single-row anode arrangement, the maximum temperature of the chip with double-row anode arrangement can be reduced by 40 K at the same conditions. For chips with different substrates, chips with diamond substrates can withstand greater power dissipation when reaching the same temperature. The simulation results are instructive for the design and optimization of Schottky diodes in the terahertz field. Full article
(This article belongs to the Special Issue GaN Heterostructure Devices: From Materials to Application)
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11 pages, 7214 KiB  
Article
Enhancing GaN/AlxGa1−xN-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement
by Lingxia Zhang, Hualong Wu, Chenguang He, Kang Zhang, Yunzhou Liu, Qiao Wang, Longfei He, Wei Zhao and Zhitao Chen
Micromachines 2024, 15(6), 778; https://doi.org/10.3390/mi15060778 - 13 Jun 2024
Viewed by 672
Abstract
This research explores the architecture and efficacy of GaN/AlxGa1−xN-based heterojunction phototransistors (HPTs) engineered with both a compositionally graded and a doping-graded base. Employing theoretical analysis along with empirical fabrication techniques, HPTs configured with an aluminum compositionally graded base were [...] Read more.
This research explores the architecture and efficacy of GaN/AlxGa1−xN-based heterojunction phototransistors (HPTs) engineered with both a compositionally graded and a doping-graded base. Employing theoretical analysis along with empirical fabrication techniques, HPTs configured with an aluminum compositionally graded base were observed to exhibit a substantial enhancement in current gain. Specifically, theoretical models predicted a 12-fold increase, while experimental evaluations revealed an even more pronounced improvement of approximately 27.9 times compared to conventional GaN base structures. Similarly, HPTs incorporating a doping-graded base demonstrated significant gains, with theoretical predictions indicating a doubling of current gain and experimental assessments showing a 6.1-fold increase. The doping-graded base implements a strategic modulation of hole concentration, ranging from 3.8 × 1016 cm−3 at the base–emitter interface to 3.8 × 1017 cm−3 at the base–collector junction. This controlled gradation markedly contributes to the observed enhancements in current gain. The principal mechanism driving these improvements is identified as the increased electron drift within the base, propelled by the intrinsic electric field inherent to both the compositionally and doping-graded structures. These results highlight the potential of such graded base designs in enhancing the performance of GaN/AlxGa1−xN HPTs and provide crucial insights for the advancement of future phototransistor technologies. Full article
(This article belongs to the Special Issue GaN Heterostructure Devices: From Materials to Application)
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9 pages, 3840 KiB  
Communication
Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
by Zuorong Nie, Kai Wang, Xiaoyi Liu and Hong Wang
Micromachines 2024, 15(5), 571; https://doi.org/10.3390/mi15050571 - 26 Apr 2024
Cited by 1 | Viewed by 1164
Abstract
We prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances. It was found that the surface morphology of the epitaxial layer was effectively improved after the [...] Read more.
We prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances. It was found that the surface morphology of the epitaxial layer was effectively improved after the introduction of the GaN cap layer. With the increase of the GaN cap thickness, the carrier concentration (ns) decreased and the carrier mobility (μH) increased. Although the drain saturation current (IdSat) of the device decreased with the increasing GaN cap thickness, the excessively thin GaN layer was not suitable for the cap layer. The thicker GaN layer not only improved the surface topography of the epitaxial layer but also effectively improved the off-state characteristics of the device. The optimal cap thickness was determined to be 3 nm. With the introduction of the 3 nm GaN cap, the IdSat was not significantly reduced. However, both the off-state gate leakage current (IgLeak) and the off-state leakage current (IdLeak) decreased by about two orders of magnitude, and the breakdown voltage (BV) increased by about 70 V. Full article
(This article belongs to the Special Issue GaN Heterostructure Devices: From Materials to Application)
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13 pages, 9907 KiB  
Article
Material Design of Ultra-Thin InN/GaN Superlattices for a Long-Wavelength Light Emission
by Leilei Xiang, Enming Zhang, Wenyu Kang, Wei Lin and Junyong Kang
Micromachines 2024, 15(3), 361; https://doi.org/10.3390/mi15030361 - 1 Mar 2024
Cited by 1 | Viewed by 1435
Abstract
GaN heterostructure is a promising material for next-generation optoelectronic devices, and Indium gallium nitride (InGaN) has been widely used in ultraviolet and blue light emission. However, its applied potential for longer wavelengths still requires exploration. In this work, the ultra-thin InN/GaN superlattices (SL) [...] Read more.
GaN heterostructure is a promising material for next-generation optoelectronic devices, and Indium gallium nitride (InGaN) has been widely used in ultraviolet and blue light emission. However, its applied potential for longer wavelengths still requires exploration. In this work, the ultra-thin InN/GaN superlattices (SL) were designed for long-wavelength light emission and investigated by first-principles simulations. The crystallographic and electronic properties of SL were comprehensively studied, especially the strain state of InN well layers in SL. Different strain states of InN layers were applied to modulate the bandgap of the SL, and the designed InN/GaN heterostructure could theoretically achieve photon emission of at least 650 nm. Additionally, we found the SL had different quantum confinement effects on electrons and holes, but an efficient capture of electron-hole pairs could be realized. Meanwhile, external forces were also considered. The orbital compositions of the valence band maximum (VBM) were changed with the increase in tensile stress. The transverse electric (TE) mode was found to play a leading role in light emission in normal working conditions, and it was advantageous for light extraction. The capacity of ultra-thin InN/GaN SL on long-wavelength light emission was theoretically investigated. Full article
(This article belongs to the Special Issue GaN Heterostructure Devices: From Materials to Application)
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