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Micromachines
Special Issues
Design, Fabrication and Reliability of Semiconductor Devices
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Design, Fabrication and Reliability of Semiconductor Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 12172

Special Issue Editor

Dr. Enxia Zhang

E-Mail Website
Guest Editor
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA
Interests: emerging semiconductor material and devices; 2D materials and devices; process-related defects; radiation effects and reliability in advanced devices and ICs; radiation hardening by design and fabrication

Special Issue Information

Dear colleagues,

Emerging materials and devices are steadily becoming core features of future applications. Fabrication and process techniques are key parameters that affect the function of related devices due to unavoidable defects generated during the material process and device fabrication. Research on material processing and device/IC fabrication is very important in order to improve the quality of devices, as well as that of integrated circuits and systems. New materials have been proven to provide potential high functionality, reliability, and prolong the lifetime of the device/systems in application. Combing both studies in emerging materials and advanced fabrication techniques can make a big difference for future applications. This Special Issue can make both emerging material research and advanced fabrication process more accessible to researchers in various fields and accelerate innovation in the field of semiconductor devices and ICs. Accordingly, this Special Issue seeks to showcase research papers and review articles that focus on novel methodological developments in emerging materials, such as 2D materials, 3D IC and system integration fabrication processes.

Dr. Enxia Zhang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • emerging semiconductor materials
  • defects
  • fabrication design and process
  • IC 3D integration process
  • 2D materials and devices
  • reliability of semiconductor devices

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Further information on MDPI's Special Issue polices can be found here.

Published Papers (3 papers)

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Research

14 pages, 7314 KiB  
Article
Design and Implementation of a Composite Hydrophone of Sound Pressure and Sound Pressure Gradient
by Guojun Zhang, Lansheng Zhang, Songxiang Ji, Xi Yang, Renxin Wang, Wendong Zhang and Shie Yang
Micromachines 2021, 12(8), 939; https://doi.org/10.3390/mi12080939 - 10 Aug 2021
Cited by 9 | Viewed by 3063
Abstract
The bionic cilium MEMS vector hydrophone has the characteristics of low power consumption, small volume, and good low-frequency response. Nevertheless, there exists the problem of left–right ambiguity in the azimuth estimation of a single hydrophone. In order to solve the engineering application problem, [...] Read more.
The bionic cilium MEMS vector hydrophone has the characteristics of low power consumption, small volume, and good low-frequency response. Nevertheless, there exists the problem of left–right ambiguity in the azimuth estimation of a single hydrophone. In order to solve the engineering application problem, a sound-pressure sound-pressure-gradient hydrophone is designed in this paper. The new composite hydrophone consists of two channels. The bionic cilium microstructure is optimized and used as the vector channel, to collect the sound pressure gradient information, and a scalar channel, based on a piezoelectric ceramic tube, is added, to receive the sound pressure information. The theoretical analysis, simulation analysis, and test analysis of the composite hydrophone are carried out, respectively. The test results show that the sensitivities of the hydrophone can reach up to −188 dB (vector channel) and −204 dB (scalar channel). The problem of left–right ambiguity is solved by combining the sound pressure and sound pressure gradient in different ways. This is of great significance in the engineering application of single cilium MEMS hydrophone orientation. Full article
(This article belongs to the Special Issue Design, Fabrication and Reliability of Semiconductor Devices)
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7 pages, 18168 KiB  
Article
Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device
by Jeewon Park, Wansu Jang and Changhwan Shin
Micromachines 2021, 12(8), 886; https://doi.org/10.3390/mi12080886 - 27 Jul 2021
Cited by 1 | Viewed by 3246
Abstract
In this study, a gate-stack engineering technique is proposed as a means of improving the performance of a 28 nm low-power (LP) high-k/metal-gate (HK/MG) device. In detail, it was experimentally verified that HfSiO thin films can replace HfSiON congeners, where the latter are [...] Read more.
In this study, a gate-stack engineering technique is proposed as a means of improving the performance of a 28 nm low-power (LP) high-k/metal-gate (HK/MG) device. In detail, it was experimentally verified that HfSiO thin films can replace HfSiON congeners, where the latter are known to have a good thermal budget and/or electrical characteristics, to boost the device performance under a limited thermal budget. TiN engineering for the gate-stack in the 28 nm LP HK/MG device was used to suppress the gate leakage current. Using the proposed fabrication method, the on/off current ratio (Ion/Ioff) was improved for a given target Ion, and the gate leakage current was appropriately suppressed. Comparing the process-of-record device against the 28 nm LP HK/MG device, the thickness of the electrical oxide layer in the new device was reduced by 3.1% in the case of n-type field effect transistors and by 10% for p-type field effect transistors. In addition, the reliability (e.g., bias temperature instability, hot carrier injury, and time-dependent dielectric breakdown) of the new device was evaluated, and it was observed that there was no conspicuous risk. Therefore, the HfSiO film can afford reliable performance enhancement when employed in the 28 nm LP HK/MG device with a limited thermal budget. Full article
(This article belongs to the Special Issue Design, Fabrication and Reliability of Semiconductor Devices)
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10 pages, 2243 KiB  
Article
Carbon Dioxide Sensor Module Based on NDIR Technology
by Libing Zhou, Yaoyi He, Qing Zhang and Lei Zhang
Micromachines 2021, 12(7), 845; https://doi.org/10.3390/mi12070845 - 20 Jul 2021
Cited by 25 | Viewed by 4431
Abstract
In this paper, a gas detection system with an environmental compensation algorithm based on nondispersive infrared (NDIR) technology was designed. The prepared infrared pyroelectric detector was a dual-channel type based on the lithium tantalate (LiTaO3) wafer. The design of the optical [...] Read more.
In this paper, a gas detection system with an environmental compensation algorithm based on nondispersive infrared (NDIR) technology was designed. The prepared infrared pyroelectric detector was a dual-channel type based on the lithium tantalate (LiTaO3) wafer. The design of the optical gas chamber adopted a combination of two ellipsoids and a spherical top surface, which not only enhanced the coupling efficiency of the light propagation but also facilitated the miniaturization of the sensor module. In addition to this, a temperature and humidity compensation algorithm based on the least square method was proposed to make the measurement accuracy up to ±0.9% full scale (FS). Full article
(This article belongs to the Special Issue Design, Fabrication and Reliability of Semiconductor Devices)
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