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Micromachines
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Low Energy, Focused Beam Ion Implantation for Semiconducting Materials and...
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Low Energy, Focused Beam Ion Implantation for Semiconducting Materials and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 24 January 2025 | Viewed by 4709

Special Issue Editor

Dr. Alex Belianinov

E-Mail Website
Guest Editor
Sandia National Laboratories, Albuquerque, NM 87123, USA
Interests: ion beams; 2D materials; nanofabrication; AFM

Special Issue Information

Dear Colleagues,

Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream, traditional implantation methods fall short in terms of energy, ion species, and positional precision. This is especially relevant for functionalization of 2D materials, as implanting into a single atomic layer with high spatial resolution combines multiple challenges in ion sources, optics, and material processing.

Precisely placing and incorporating a variety of ions and vacancies into 2D materials is a technological gap that needs to be addressed for IEEE predicted roadmap for mass utilization of 2D materials in the consumer electronics by the 2030s, technological space around 2D material-based sensors, and emerging interests in using 2D materials as single photon emitters for quantum applications. This Special Issue seeks to highlight recent advanced in ion implantation, ion optics, and theoretical simulations via research papers, and review articles that describe the most salient physics, methodologies, and outstanding issues in the ion beam community, for directly implanting ions into 2D materials.

We look forward to receiving your submissions!

Dr. Alex Belianinov
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ion implantation
  • focused ion beams
  • 2D materials
  • semiconductors devices
  • nanofabrication
  • in situ

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Published Papers (3 papers)

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Research

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11 pages, 3730 KiB  
Article
Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation
by Tohru Nakamura, Michitaka Yoshino, Toru Toyabe and Akira Yasuda
Micromachines 2024, 15(1), 147; https://doi.org/10.3390/mi15010147 - 18 Jan 2024
Viewed by 1291
Abstract
Mg-ion-implanted layers in a GaN substrate after annealing were investigated. Implanted Mg atoms precipitated along the edges of crystal defects were observed using 3D-APT. The breakdown characteristics of a GaN double-diffused vertical MISFET (DMISFET) fabricated via triple ion implantation are presented. A DMISFET [...] Read more.
Mg-ion-implanted layers in a GaN substrate after annealing were investigated. Implanted Mg atoms precipitated along the edges of crystal defects were observed using 3D-APT. The breakdown characteristics of a GaN double-diffused vertical MISFET (DMISFET) fabricated via triple ion implantation are presented. A DMISFET with Si-ion-implanted source regions was formed in Mg-ion-implanted p-base regions, which were isolated from adjacent devices by N-ion-implanted edge termination regions. A threshold voltage of −0.5 V was obtained at a drain voltage of 0.5 V for the fabricated vertical MISFET with an estimated Mg surface concentration of 5 × 1018 cm−3. The maximum drain current and maximum transconductance in a saturation region of Vds = 100 V were 2.8 mA/mm and 0.5 mS/mm at a gate voltage of 15 V, respectively. The breakdown voltage in the off-state was 417 V. The breakdown points were determined by the boundary regions between the N- and Mg-implanted regions. By improving heat annealing methods, ion-implanted GaN DMISFETs can be a promising candidate for future high-voltage and high-power applications. Full article
(This article belongs to the Special Issue Low Energy, Focused Beam Ion Implantation for Semiconducting Materials and Devices)
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10 pages, 2718 KiB  
Article
Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics
by Michael Titze, Jonathan D. Poplawsky, Silvan Kretschmer, Arkady V. Krasheninnikov, Barney L. Doyle, Edward S. Bielejec, Gerhard Hobler and Alex Belianinov
Micromachines 2023, 14(10), 1884; https://doi.org/10.3390/mi14101884 - 30 Sep 2023
Viewed by 1729
Abstract
Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here, we [...] Read more.
Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here, we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low-energy ion implants can be achieved by either lowering the column voltage or decelerating ions using bias while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found, which is due to lattice enrichment with high-stopping-power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way towards much lower implantation energies while maintaining high spatial resolution. Full article
(This article belongs to the Special Issue Low Energy, Focused Beam Ion Implantation for Semiconducting Materials and Devices)
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Review

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25 pages, 23489 KiB  
Review
Review of Gas Dynamic RF-Only Funnel Technique for Low-Energy and High-Quality Ion Beam Extraction into a Vacuum
by Victor Varentsov
Micromachines 2023, 14(9), 1771; https://doi.org/10.3390/mi14091771 - 15 Sep 2023
Cited by 2 | Viewed by 1131
Abstract
This paper reviews the development and present status of a novel gas dynamic RF-only funnel technique for low-energy ion beam extraction into vacuum. This simple and original technique allows for the production of high-quality continuous and pulsed ion beams in a wide range [...] Read more.
This paper reviews the development and present status of a novel gas dynamic RF-only funnel technique for low-energy ion beam extraction into vacuum. This simple and original technique allows for the production of high-quality continuous and pulsed ion beams in a wide range of masses, which have a very small transverse and longitudinal emittance. Full article
(This article belongs to the Special Issue Low Energy, Focused Beam Ion Implantation for Semiconducting Materials and Devices)
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