Graphene and Related 2D Materials Based Devices and Heterostructures

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (15 July 2021) | Viewed by 5027

Special Issue Editors


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Guest Editor
Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
Interests: nanoelectronics; optoelectronics; devices characterization; simulation; 2D materials; neuromorphic electronics/computing; graphene

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Guest Editor
Department of Electronics and Computer Technology, Faculty of Sciences, University of Granada, 18071 Granada, Spain
Interests: two-dimensional materials; nanotechnology; multi-scale simulations; (opto)electronics; semiconductor heterostructures; printed electronics

Special Issue Information

Dear Colleagues,

The surge of graphene and related 2D materials has revolutionized research in electronic and optoelectronic devices. In particular, the opportunity to have insulator, semiconductor, and semi-metal electronic behaviors in mono-atomic thick materials has expanded the design possibilities. The so-called quantum engineering of 2D materials, exemplified by lateral and van-der-Waals heterostructures, is the new paradigm in device design. The simplified fabrication process enabled by exfoliation and the advances in more traditional methods have allowed the scientific community to explore new concepts of devices that exploit combinations of layered materials, as well as integration with traditional bulk ones, seeking disruptive technological advances. There are thousands of possibilities to analyze, and each application may benefit from a specific device structure and a certain combination of bulk/2D materials.

This Special Issue is focused on the analysis of the electronic and optoelectronic properties of devices based on graphene and related layered materials, with an emphasis on their heterostructures and also on their interfaces with materials such as bulk metals or insulators. Both experimental and theoretical approaches are welcome for 2D material-based devices such as transistors, photodetectors, sensors, memristors, etc.

Prof. Dr. Francisco Javier García Ruiz
Dr. Enrique G. Marin
Guest Editors

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Keywords

  • Graphene
  • Two-dimensional materials
  • Optoelectronic devices
  • Sensors
  • Memristive devices
  • Transistors
  • 2D heterostructures
  • 2D–3D heterostructures

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Published Papers (1 paper)

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Research

9 pages, 2456 KiB  
Communication
Integration of Single-Photon Emitters in 2D Materials with Plasmonic Waveguides at Room Temperature
by Kwang-Yong Jeong, Seong Won Lee, Jae-Hyuck Choi, Jae-Pil So and Hong-Gyu Park
Nanomaterials 2020, 10(9), 1663; https://doi.org/10.3390/nano10091663 - 25 Aug 2020
Cited by 6 | Viewed by 4257
Abstract
Efficient integration of a single-photon emitter with an optical waveguide is essential for quantum integrated circuits. In this study, we integrated a single-photon emitter in a hexagonal boron nitride (h-BN) flake with a Ag plasmonic waveguide and measured its optical properties at room [...] Read more.
Efficient integration of a single-photon emitter with an optical waveguide is essential for quantum integrated circuits. In this study, we integrated a single-photon emitter in a hexagonal boron nitride (h-BN) flake with a Ag plasmonic waveguide and measured its optical properties at room temperature. First, we performed numerical simulations to calculate the efficiency of light coupling from the emitter to the Ag plasmonic waveguide, depending on the position and polarization of the emitter. In the experiment, we placed a Ag nanowire, which acted as the plasmonic waveguide, near the defect of the h-BN, which acted as the single-photon emitter. The position and direction of the nanowire were precisely controlled using a stamping method. Our time-resolved photoluminescence measurement showed that the single-photon emission from the h-BN flake was enhanced to almost twice the intensity as a result of the coupling with the Ag nanowire. We expect these results to pave the way for the practical implementation of on-chip nanoscale quantum plasmonic integrated circuits. Full article
(This article belongs to the Special Issue Graphene and Related 2D Materials Based Devices and Heterostructures)
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