Wide-Bandgap and Ultrawide-Bandgap Semiconductor Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 23 May 2025 | Viewed by 1341

Special Issue Editor


E-Mail Website
Guest Editor
School of Microelectronics and the Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
Interests: oxide semiconductors; Ga2O3; oxide functional; hybrid devices and circuits; high-mobility devices and reliability

Special Issue Information

Dear Colleagues,

Wide-bandgap and ultrawide-bandgap semiconductor nanomaterials represent a class of materials that have gained significant attention in recent years due to their unique electronic properties and multifaceted applications.

Broadly speaking, a wide-bandgap semiconductor is a type of semiconductor material with an energy bandgap larger than 2.0 eV. The bandgap is the energy range in which electrons are not present, and their absence in this region allows wide-bandgap semiconductors to exhibit distinct properties, such as a high breakdown voltage, high thermal stability, and unique optical properties. These materials hold great promise in fields ranging from electronics and photonics to energy conversion and biomedicine.

This Special Issue aims to showcase and explore the latest breakthroughs in the synthesis, theoretical calculations, performance characterization, and applications of wide-bandgap and ultrawide-bandgap semiconductor nanomaterials. It provides a platform for researchers to share their innovative work on a broad spectrum of topics, including, but not limited to the following:

  • Innovative methods and techniques for synthesizing wide-bandgap and ultrawide-bandgap semiconductor nanomaterials, including inorganic non-metallic materials, organic multi-iron materials, and organic–inorganic hybrids;
  • Advanced computational modeling and simulations to understand the electronic, optical, and structural properties of these materials;
  • Performance characterization of experimental investigations of wide-bandgap and ultrawide-bandgap semiconductor nanomaterials, including their electrical, optical, thermal, and mechanical properties;
  • Diverse applications of these materials, such as in biomedical applications, energy harvesting processes, optoelectronic devices, power electronics, and more;
  • Applications of wide-bandgap and ultrawide-bandgap semiconductor nanomaterials committed to biological applications in various aspects of therapy, diagnostics, and imaging.

We are looking forward to receiving your contributions that will help progress this Special Issue, “Wide-Bandgap and Ultrawide-Bandgap Semiconductor Nanomaterials”, in Nanomaterials.

Dr. Wenjun Liu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • WB and UWB semiconductor theoretical modeling
  • WB and UWB semiconductor performance characterization
  • WB and UWB semiconductor optoelectronics
  • WB and UWB semiconductor power electronics
  • WB and UWB semiconductor photonics devices
  • WB and UWB semiconductor biomedical applications
  • WB and UWB semiconductor energy conversion

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

10 pages, 4041 KiB  
Article
A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination
by Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie and Wenjun Liu
Nanomaterials 2024, 14(11), 978; https://doi.org/10.3390/nano14110978 - 5 Jun 2024
Viewed by 1002
Abstract
In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the β-Ga2O3 Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to investigate the influence [...] Read more.
In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the β-Ga2O3 Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to investigate the influence of the relative positions of field plates (FPs) and ion implantation on the device performance. The device with the FP of 15 μm and the ion implantation at the edge of the Schottky electrode exhibited a breakdown voltage (Vbr) of 1616 V, a specific on-resistance (Ron,sp) of 5.11 mΩ·cm2, a power figure of merit (PFOM) of 0.511 GW/cm2, and a reverse current density of 1.2 × 10−5 A/cm2 @ −1000 V. Compared to the control device, although the Ron,sp increased by 1 mΩ·cm2, the Vbr of the device increased by 183% and the PFOM increased by 546.8%. Moreover, the reverse leakage current of the device with the FP and NIET structure decreased by three orders of magnitude. The TCAD simulation revealed that the peak electric field at the interface decreased from 7 MV/cm @ −500 V to 4.18 MV/cm @ −1000 V. These results demonstrate the great potential for the β-Ga2O3 SBD with a FP and NIET structure in power electronic applications. Full article
(This article belongs to the Special Issue Wide-Bandgap and Ultrawide-Bandgap Semiconductor Nanomaterials)
Show Figures

Figure 1

Back to TopTop