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2D/3D Perovskite and Halide Perovskite: Synthesis, Structure, and Optoelectronic Device...
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2D/3D Perovskite and Halide Perovskite: Synthesis, Structure, and Optoelectronic Device Application

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Solar Energy and Solar Cells".

Deadline for manuscript submissions: closed (31 July 2022) | Viewed by 2637

Special Issue Editor

Prof. Dr. Bo-Tau Liu

E-Mail Website
Guest Editor
Department of Chemical and Materials Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan
Interests: optical film; photovoltaics; optoelectronic materials; nanomaterials; colloidal and interface science; environmental catalysis
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Perovskites have been demonstrated to have outstanding photovoltaic properties such as high absorption coefficient, large charge carrier diffusion length, and high charge carrier mobility. They have thus emerged as promising materials for highly effective light-emitting diodes, solar cells, and photocatalysts. The power conversion efficiency of perovskite solar cells reached 25.5% in 2021, being close to that of silicon solar cells. This Special Issue aims to explore the state-of-the-art nanomaterials and nanotechnologies applied in perovskite optoelectronics and photovoltaics with respect to design of charge transport materials, novel absorbers, all-inorganic perovskite, 2D/3D engineering, control of morphology and crystallization of absorbers, interface modification, defect engineering, large-area/long stability fabrication, facile manufacturing, new device architectures, etc. Such technologies can make significant progress in the development of perovskite optoelectronics and photovoltaics. Original research and review articles are welcome.

Prof. Dr. Bo-Tau Liu
Guest Editor

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Keywords

  • solar cell
  • light-emitting diode
  • photocatalysis
  • new perovskite, device, and application
  • reliability, stability, and lifetime
  • novel materials for HTL, ETL, and electrodes
  • interface engineering for improved efficiency and stability
  • large-area, flexible-substrate fabrication
  • new prospects, processes, technologies on fabrication

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Published Papers (2 papers)

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Research

8 pages, 2105 KiB  
Article
Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI3 Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand
by Yusheng Li, Dandan Wang, Shuzi Hayase, Yongge Yang, Chao Ding and Qing Shen
Nanomaterials 2022, 12(18), 3101; https://doi.org/10.3390/nano12183101 - 7 Sep 2022
Cited by 1 | Viewed by 1844
Abstract
CsPbI3 quantum dots (QDs) are of great interest in new-generation photovoltaics (PVs) due to their excellent optoelectronic properties. The long and insulative ligands protect their phase stability and enable superior photoluminescence quantum yield, however, limiting charge transportation and extraction in PV devices. [...] Read more.
CsPbI3 quantum dots (QDs) are of great interest in new-generation photovoltaics (PVs) due to their excellent optoelectronic properties. The long and insulative ligands protect their phase stability and enable superior photoluminescence quantum yield, however, limiting charge transportation and extraction in PV devices. In this work, we use a fullerene derivative with the carboxylic anchor group ([SAM]C60) as the semiconductor ligand and build the type II heterojunction system of CsPbI3 QDs and [SAM]C60 molecules. We find their combination enables obvious exciton dislocation and highly efficient photogenerated charge extraction. After the introduction of [SAM]C60, the exciton-binding energy of CsPbI3 decreases from 30 meV to 7 meV and the fluorescence emission mechanism also exhibits obvious changes. Transient absorption spectroscopy visualizes a ~5 ps electron extraction rate in this system. The findings gained here may guide the development of perovskite QD devices. Full article
(This article belongs to the Special Issue 2D/3D Perovskite and Halide Perovskite: Synthesis, Structure, and Optoelectronic Device Application)
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15 pages, 2225 KiB  
Article
Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers
by Jasurbek Gulomov, Oussama Accouche, Rayimjon Aliev, Bilel Neji, Raymond Ghandour, Irodakhon Gulomova and Marc Azab
Nanomaterials 2022, 12(15), 2692; https://doi.org/10.3390/nano12152692 - 5 Aug 2022
Cited by 8 | Viewed by 2459
Abstract
Perovskite solar cells (PSCs) are a promising area of research among different new generations of photovoltaic technologies. Their manufacturing costs make them appealing in the PV industry compared to their alternatives. Although PSCs offer high efficiency in thin layers, they are still in [...] Read more.
Perovskite solar cells (PSCs) are a promising area of research among different new generations of photovoltaic technologies. Their manufacturing costs make them appealing in the PV industry compared to their alternatives. Although PSCs offer high efficiency in thin layers, they are still in the development phase. Hence, optimizing the thickness of each of their layers is a challenging research area. In this paper, we investigate the effect of the thickness of each layer on the photoelectric parameters of n-ZnO/p-CH3NH3PbI3/p-NiOx solar cell through various simulations. Using the Sol–Gel method, PSC structure can be formed in different thicknesses. Our aim is to identify a functional connection between those thicknesses and the optimum open-circuit voltage and short-circuit current. Simulation results show that the maximum efficiency is obtained using a perovskite layer thickness of 200 nm, an electronic transport layer (ETL) thickness of 60 nm, and a hole transport layer (HTL) thickness of 20 nm. Furthermore, the output power, fill factor, open-circuit voltage, and short-circuit current of this structure are 18.9 mW/cm2, 76.94%, 1.188 V, and 20.677 mA/cm2, respectively. The maximum open-circuit voltage achieved by a solar cell with perovskite, ETL and HTL layer thicknesses of (200 nm, 60 nm, and 60 nm) is 1.2 V. On the other hand, solar cells with the following thicknesses, 800 nm, 80 nm, and 40 nm, and 600 nm, 80 nm, and 80 nm, achieved a maximum short-circuit current density of 21.46 mA/cm2 and a fill factor of 83.35%. As a result, the maximum value of each of the photoelectric parameters is found in structures of different thicknesses. These encouraging results are another step further in the design and manufacturing journey of PSCs as a promising alternative to silicon PV. Full article
(This article belongs to the Special Issue 2D/3D Perovskite and Halide Perovskite: Synthesis, Structure, and Optoelectronic Device Application)
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