Study on Photoelectric Properties and Applications of Nanostructured Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (10 November 2024) | Viewed by 2558

Special Issue Editors


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Guest Editor
School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
Interests: microelectronic packaging; micro/nano/optoelectronic devices; cross scale modeling and design; life prediction and reliability design; dynamics design; lightweight technology

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Co-Guest Editor
School of Mechanical Engineering, Shandong University, Jinan 250061, China
Interests: reliability of electronic packaging; thermal management; friction and wear; advanced structural materials; computational materials
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Co-Guest Editor
School of Mechanical Engineering, Jiangsu University of Technology, Changzhou 213001, China
Interests: semiconductor materials; optoelectronic devices; ultra-thin conductive film; calculated material
Centre for Advanced Laser Manufacturing (CALM), School of Mechanical Engineering, Shandong University of Technology, Zibo 255000, China
Interests: advanced functional materials and structures; thermal management; computational materials; ultrafast laser processing
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The advantages of photoelectric properties greatly expend applications of nanostructured materials in fields of biomedicine, optoelectronic devices, solar cells, and photocatalysis. Nanomaterials have a variety of structures such as films, nanowires (rods), nanosheets, nanoparticles, and quantum dots. Through precise synthesis, the regulation of nanostructures, and the control of the self-assembly of nanomaterials, the regulation of light absorption (reflection or transmission or excitation) bands and the enhancement of electrical properties can be realized, promoting the continuously improving photoelectric conversion efficiency and highly developed functionalization. Approaches such as defect recombination and surface modification are proven to be effective at inducing nanostructures for advanced photoelectric properties. Considering that the considerable heat generated during energy conversion would seriously affect photoelectric properties, reliability, and lifetime, thermal management is also critical for the design of nanostructured materials, especially for application in power devices.

We are pleased to invite you to contribute original and critical articles on the photoelectric properties and related applications of nanostructured materials.

This Special Issue aims to introduce the latest research on photoelectric properties and related applications of nanostructured materials. The photoelectric properties of nanostructured materials have broad application prospects in biomedicine, semiconductor optoelectronic devices, and new energy, and their further development is of great significance for breakthroughs in many fields.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

Synthesis and characterization of nanostructures, modification and enhancement of photoelectrical properties, absorption, reflection, or excitation properties of light, generation, transport, and transfer of charge carriers, applications of nanostructures in biomedicine, semiconductor optoelectronic devices, new energy, surface modification of nanostructures, interfacial charge transfer in nanostructured materials, preparation of new nanomaterials, and thermal management.

We look forward to receiving your contributions.

Prof. Dr. Ping Yang
Prof. Dr. Yunqing Tang
Dr. Yanfang Zhao
Dr. Bing Yang
Guest Editors

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Keywords

  • nanostructured materials
  • low-dimensional materials
  • surface modification
  • hetero-/homo-junction
  • biomedical imaging
  • photoelectrocatalysis
  • photoelectric conversion
  • photoelectric sensing
  • thermal management
  • semiconductor optoelectronic devices

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Published Papers (2 papers)

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Research

13 pages, 5766 KiB  
Article
First Principles Study of p-Type Transition and Enhanced Optoelectronic Properties of g-ZnO Based on Diverse Doping Strategies
by Kaiqi Bao, Yanfang Zhao, Wei Ding, Yuanbin Xiao and Bing Yang
Nanomaterials 2024, 14(23), 1863; https://doi.org/10.3390/nano14231863 - 21 Nov 2024
Viewed by 222
Abstract
By utilizing first principles calculations, p-type transition in graphene-like zinc oxide (g-ZnO) through elemental doping was achieved, and the influence of different doping strategies on the electronic structure, energy band structure, and optoelectronic properties of g-ZnO was investigated. This research study delves into [...] Read more.
By utilizing first principles calculations, p-type transition in graphene-like zinc oxide (g-ZnO) through elemental doping was achieved, and the influence of different doping strategies on the electronic structure, energy band structure, and optoelectronic properties of g-ZnO was investigated. This research study delves into the effects of strategies such as single-acceptor doping, double-acceptor co-doping, and donor–acceptor co-doping on the properties of g-ZnO. This study found that single-acceptor doping with Li and Ag elements can form shallow acceptor levels, thereby facilitating p-type conductivity. Furthermore, the introduction of the donor element F can compensate for the deep acceptor levels formed by double-acceptor co-doping, transforming them into shallow acceptor levels and modulating the energy band structure. The co-doping strategy involving double-acceptor elements and a donor element further optimizes the properties of g-ZnO, such as reducing the bandgap and enhancing carrier mobility. Additionally, in terms of optical properties, g-Zn14Li2FO15 demonstrates outstanding performance in the visible-light region compared with other doping systems, especially generating a higher absorption peak around the wavelength of 520 nm. These findings provide a theoretical foundation for the application of g-ZnO in optoelectronic devices. Full article
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11 pages, 5003 KiB  
Article
High-Energy Mode-Locked Pulse Er-Doped Fiber Laser-Based GeTe as Saturable Absorber
by Shouqian Tang, Qiuyan Sheng, Faming Ye, Qi Li, Siyuan Xiong, Caixun Bai, Cheng Lu, Huanian Zhang, Guomei Wang and Wenfei Zhang
Nanomaterials 2023, 13(16), 2331; https://doi.org/10.3390/nano13162331 - 14 Aug 2023
Cited by 1 | Viewed by 1377
Abstract
High-energy Er-doped fiber laser with high conversion efficiency is reported, which is mode-locked by a germanium telluride (GeTe)-based saturable absorber (SA). By adjusting the direction of the polarization controller (PC), a high-energy pulse with a central wavelength of 1533.1 nm and a fundamental [...] Read more.
High-energy Er-doped fiber laser with high conversion efficiency is reported, which is mode-locked by a germanium telluride (GeTe)-based saturable absorber (SA). By adjusting the direction of the polarization controller (PC), a high-energy pulse with a central wavelength of 1533.1 nm and a fundamental repetition frequency of 1.58 MHz is achieved. Under the pump power of 450.1 mW, the maximum average output power is 50.48 mW, and the single-pulse energy is 32 nJ. It is worth noting that the optical-to-optical conversion efficiency has reached about 11.2%. The experimental results indicate that GeTe performs excellently as SAs for obtaining mode-locked fiber lasers and plays an extremely important role in high-energy fiber lasers. Full article
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