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Nanomaterials
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Physical Properties of Semiconductor Nanostructures and Devices
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Physical Properties of Semiconductor Nanostructures and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanofabrication and Nanomanufacturing".

Deadline for manuscript submissions: closed (20 November 2024) | Viewed by 1906

Special Issue Editor

Prof. Dr. Zhichuan Niu

E-Mail Website
Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Interests: epitaxial nanostructures; self-assmbled quantum dots; quantum wells; semiconductor laser; quantum light source; photodetector
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

One of the most important materials recently used in optoelectronic devices, e.g., laser diodes, quantum light sources, and photodetectors, is the semiconductor nanostructure (e.g., the quantum dot, well, or superlattice). It shows excellent properties as an optical emitter or absorber and the potential for mass production. A three-dimensionally confined quantum dot shows properties that are greatly attuned by the surrounding ‘environment’, e.g., doping, the local electric or strain field, or the band structure, which is promising for symmetric exciton or higher-order exciton formation, less dephasing or fast-decay emissions, and a high-sensitivity detection. With a quantum emitter, one of the major challenges is to build symmetric exciton with less barrier scattering and align the quantum dot to a nano-cavity (or static field) for optimal enhancement (or electric tuning). This can be achieved by optimizing the growth surface, cladding strain, junction field, epitaxial lift-off, and alignment technique.

In this Special Issue of Nanomaterials, we aim to present the current use of hybrid nanostructures in optoelectronics, a field that has blossomed since the 2000s, with seminal discoveries regarding quantum dots as single photon or laser emitters that have subsequently been developed further. For this Special Issue, we invite contributions from leading groups in the field, with the aim of presenting an overview of the state of the art in this discipline.

Prof. Dr. Zhichuan Niu
Guest Editor

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

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Keywords

  • hybrid quantum structures
  • self-assembled quantum dots
  • quantum wells
  • laser diode
  • quantum light source
  • photodetector
  • nanocavity
  • epitaxial lift-off
  • alignment technique

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Published Papers (2 papers)

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9 pages, 5581 KiB  
Article
ITO-Based Electrically Tunable Metasurface for Active Control of Light Transmission
by Ruize Ma, Yu Mao, Peiyang Li, Dong Li and Dandan Wen
Nanomaterials 2024, 14(19), 1606; https://doi.org/10.3390/nano14191606 - 5 Oct 2024
Viewed by 881
Abstract
In recent years, the rapid development of dynamically tunable metasurfaces has provided a new avenue for flexible control of optical properties. This paper introduces a transmission-type electrically tunable metasurface, employing a series of subwavelength-scale silicon (Si) nanoring structures with an intermediate layer of [...] Read more.
In recent years, the rapid development of dynamically tunable metasurfaces has provided a new avenue for flexible control of optical properties. This paper introduces a transmission-type electrically tunable metasurface, employing a series of subwavelength-scale silicon (Si) nanoring structures with an intermediate layer of Al2O3-ITO-Al2O3. This design allows the metasurface to induce strong Mie resonance when transverse electric (TE) waves are normally incident. When a bias voltage is applied, the interaction between light and matter is enhanced due to the formation of an electron accumulation layer at the ITO-Al2O3 interface, thereby altering the resonance characteristics of the metasurface. This design not only avoids the absorption loss of metal nanostructures and has a large modulation depth, but also shows compatibility with complementary metal oxide semiconductor (CMOS) technology. Full article
(This article belongs to the Special Issue Physical Properties of Semiconductor Nanostructures and Devices)
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25 pages, 6231 KiB  
Article
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors
by Tarek Hidouri, Maura Pavesi, Marco Vaccari, Antonella Parisini, Nabila Jarmouni, Luigi Cristofolini and Roberto Fornari
Nanomaterials 2024, 14(18), 1472; https://doi.org/10.3390/nano14181472 - 10 Sep 2024
Viewed by 676
Abstract
Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the [...] Read more.
Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution’s stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10−8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at −1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors. Full article
(This article belongs to the Special Issue Physical Properties of Semiconductor Nanostructures and Devices)
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