Nanomaterials for Printed Displays

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanofabrication and Nanomanufacturing".

Deadline for manuscript submissions: closed (20 December 2021) | Viewed by 9395

Special Issue Editor


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Guest Editor
School of Materials Science and Engineering, South China University of Technology, Guangzhou, China
Interests: organic light-emitting display devices and technologies

Special Issue Information

Dear Colleagues,

With the emergence of new materials, new technology, and new equipment, new displays are being developed which offer ultra-high resolution, large size, light weight, flexibility, and low cost. Compared to traditional display technologies based on vacuum deposition, printed displays are cheap, flexible and can be produced widely, offering effective solutions to the present issues in the field.

The preparation of patterned thin films by printing nanomaterials has been widely attempted in various fields of display technology, such as OLED displays, QLED displays, displays, flexible displays, thin film transistor backplane for displays, and so on. This Special Issue aims to highlight novel aspects of printed technology using nanomaterials for new displays. Challenges that may be addressed are new nano-ink formulations (such as nanoparticles inks, reactive inks, quantum dot inks, luminescent nanomaterials inks, etc.), printing of multilayer functional films at low temperatures, development of new printing processes, and technology for printed displays.

The special issue aims at summarizing the basic knowledge and pointing out the challenges associated with nanomaterials for printed displays.

Prof. Dr. Junbiao Peng
Guest Editor

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Keywords

  • printed display
  • nano-inks
  • thin film transistors
  • OLED
  • QLED
  • flexible displays

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Published Papers (2 papers)

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Research

10 pages, 2313 KiB  
Article
Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes
by Yu Luo, Junjie Wang, Pu Wang, Chaohuang Mai, Jian Wang, Boon Kar Yap and Junbiao Peng
Nanomaterials 2021, 11(6), 1606; https://doi.org/10.3390/nano11061606 - 18 Jun 2021
Cited by 6 | Viewed by 2935
Abstract
We report the effects of ultraviolet (UV) irradiation and storage on the performance of ZnO-based inverted quantum-dot light-emitting diodes (QLEDs). The effects of UV irradiation on the electrical properties of ZnO nanoparticles (NPs) were investigated. We demonstrate that the charge balance was enhanced [...] Read more.
We report the effects of ultraviolet (UV) irradiation and storage on the performance of ZnO-based inverted quantum-dot light-emitting diodes (QLEDs). The effects of UV irradiation on the electrical properties of ZnO nanoparticles (NPs) were investigated. We demonstrate that the charge balance was enhanced by improving the electron injection. The maximum external quantum efficiency (EQE) and power efficiency (PE) of QLEDs were increased by 26% and 143% after UV irradiation for 15 min. In addition, we investigated the storage stabilities of the inverted QLEDs. During the storage period, the electron current from ZnO gradually decreased, causing a reduction in the device current. However, the QLEDs demonstrated improvements in maximum EQE by 20.7% after two days of storage. Our analysis indicates that the suppression of exciton quenching at the interface of ZnO and quantum dots (QDs) during the storage period could result in the enhancement of EQE. This study provides a comprehension of the generally neglected factors, which could be conducive to the realization of high-efficiency and highly storage-stable practical applications. Full article
(This article belongs to the Special Issue Nanomaterials for Printed Displays)
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10 pages, 1833 KiB  
Article
Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes
by Binbin Zhang, Yu Luo, Chaohuang Mai, Lan Mu, Miaozi Li, Junjie Wang, Wei Xu and Junbiao Peng
Nanomaterials 2021, 11(5), 1246; https://doi.org/10.3390/nano11051246 - 9 May 2021
Cited by 23 | Viewed by 5954
Abstract
An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indicated [...] Read more.
An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indicated that ZnMgO film has an amorphous structure, which is similar to zinc oxide (ZnO) film. Comparison of morphology between ZnO film and ZnMgO film demonstrated that Mg-doped ZnO film remains a high-quality surface (root mean square roughness: 0.86 nm) as smooth as ZnO film. The optical band gap and ultraviolet photoelectron spectroscopy (UPS) analysis revealed that the conduction band of ZnO shifts to a more matched position with InP quantum dot after Mg-doping, resulting in the decrease in turn-on voltage from 2.51 to 2.32 V. In addition, the ratio of irradiation recombination of QLED increases from 7% to 25% using ZnMgO ETL, which can be attributed to reduction in trap state by introducing Mg ions into ZnO lattices. As a result, ZnMgO is a promising material to enhance the performance of inverted InP QLED. This work suggests that ZnMgO has the potential to improve the performance of QLED, which consists of the ITO/ETL/InP QDs/TCTA/MoO3/Al, and Mg-doping strategy is an efficient route to directionally regulate ZnO conduction bands. Full article
(This article belongs to the Special Issue Nanomaterials for Printed Displays)
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