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Nanomaterials
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Semiconductor Nanowires: Fabrication, Characterization, and Applications
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Semiconductor Nanowires: Fabrication, Characterization, and Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 September 2022) | Viewed by 18438

Special Issue Editors

Prof. Dr. Chih-Yen Chen

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Guest Editor
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University (NSYSU), Kaohsiung City 80424, Taiwan
Interests: green energy; electron microscopy; characterization; nanomaterials; optical and electrical properties of nanowires; semiconductor heterojunctions and their application as photodetectors, solar cells, and chemical sensors; photocatalytic water splitting; photocatalytic degradation
Dr. Hung-Wei (Homer) Yen

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Guest Editor
Department of Materials Science & Engineering, National Taiwan University (NTU), Taipei 10617, Taiwan
Interests: materials characterizations: scanning electron microscopy, transmission electron microscopy, X-ray diffraction spectrum, atom probe tomography; materials mechanical behaviors; microstructure and defect physics; phase transformation in alloys; empirical methods: thermo-calc or artificial neural network
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Zong-Hong Lin

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Guest Editor
Institute of Biomedical Engineering and Department of Power Mechanical Engineering, National Tsing Hua University (NTHU), Hsinchu City 30013, Taiwan
Interests: smart nanogenerators; self-powered nanosensors and nanosystems; porous nanomaterials for electrochemical applications; biomolecule detection; functional nanomaterials with strong antibacterial activities
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Der-Hsien Lien

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Guest Editor
Department of Electrical Engineering, National Chiao Tung University (NCTU), Hsinchu City 30010, Taiwan
Interests: electronic materials; smart electronics; photophysics of novel semiconductors, graphene, and 2D-layered materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor nanowires are designed materials showing one or more functionalities that can be significantly changed in a controlled fashion by external stimuli, such as stress, moisture, electric or magnetic fields, light, temperature, pH, or chemical compounds. One dimensional nanomaterials are materials with typical size features in the lower nanometer size range and characteristic mesoscopic properties. These properties make them attractive objects of fundamental research and potential new applications. The scope of Special Issues—Semiconductor Nanowires: Fabrication, Characterization, and Applications.

Topics:

  1. Semiconductor Nanowires are the basis of many applications, including environmental and bio-chemical sensors, optoelectronic and piezoelectric materials, energy harvesting materials, field effect transistors, and field emission devices, photocatalysts, etc.
  2. One Dimensional Nanomaterials are the basis of many applications, including single-walled carbon nanotubes (SWCNTs), multiple-walled carbon nanotubes (MWCNTs), nanotubes, nanowires, nanostructured frameworks, surface coating technologies, nanocomposites, self-assemblies, characterization, etc.
  3. Methodologies: (1) synthesis of Semiconductor Nanowires, (2) characterization of mesoscopic properties, (3) modeling computation of Semiconductor Nanowires (or One Dimensional Nanomaterials) or mesoscopic effects.
  4. Applications: new applications of Semiconductor One Dimensional Nanomaterials.

Prof. Dr. Chih-Yen Chen
Prof. Dr. Hung-Wei (Homer) Yen
Prof. Dr. Zong-Hong Lin
Prof. Dr. Der-Hsien Lien
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Nanowires or one dimensional materials
  • Energy harvesting devices and supercapacitors
  • Optoelectronic and piezoelectric materials
  • Photocatalysts and environmental sensors
  • Field effect transistors and field emission devices
  • Biological or chemical sensors
  • Characterization or modeling computation

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Published Papers (6 papers)

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Research

11 pages, 4342 KiB  
Article
Tailoring InSb Nanowires for High Thermoelectric Performance Using AAO Template-Assisted Die Casting Process
by Alangadu Kothandan Vivekanandan, Chen-Wei Lee, Rui-Zhe Wu, Wei-Han Tsai, Shih-Hsun Chen, Yang-Yuan Chen and Chia-Ting Lin
Nanomaterials 2022, 12(12), 2032; https://doi.org/10.3390/nano12122032 - 13 Jun 2022
Cited by 3 | Viewed by 2256
Abstract
Herein, we demonstrate a facile technique for the fabrication of one-dimensional indium antimonide (InSb) nanowires using anodic aluminium oxide (AAO) template-assisted vacuum die-casting method. The filling mechanism of the vacuum die-casting process is investigated on varying AAO pore structures through different electrolytes. It [...] Read more.
Herein, we demonstrate a facile technique for the fabrication of one-dimensional indium antimonide (InSb) nanowires using anodic aluminium oxide (AAO) template-assisted vacuum die-casting method. The filling mechanism of the vacuum die-casting process is investigated on varying AAO pore structures through different electrolytes. It is found that the anodizing electrolytes play a vital role in nanowire growth and structure formation. The as-obtained InSb nanowires from the dissolution process show a degree of high crystallinity, homogeneity, and uniformity throughout their structure. The TEM and XRD results elucidated the InSb zinc-blende crystal structure and preferential orientation along the c-axis direction. The thermoelectric characteristics of InSb nanowires were measured with a four-electrode system, and their resistivity, Seebeck coefficient, power factor, thermal conductivity, and ZT have been evaluated. Further, surface-modified nanowires using the reactive-ion etching technique showed a 50% increase in thermoelectric performance. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Fabrication, Characterization, and Applications)
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9 pages, 3204 KiB  
Article
Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters
by Seunghwan Lee, Jun-Sik Yoon, Junjong Lee, Jinsu Jeong, Hyeok Yun, Jaewan Lim, Sanguk Lee and Rock-Hyun Baek
Nanomaterials 2022, 12(10), 1721; https://doi.org/10.3390/nano12101721 - 18 May 2022
Cited by 2 | Viewed by 2155
Abstract
In this study, threshold voltage (Vth) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15–22 nm and various channel diameters (DNW) of 7, 9, and 12 nm. Linear slope and nonzero y-intercept [...] Read more.
In this study, threshold voltage (Vth) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15–22 nm and various channel diameters (DNW) of 7, 9, and 12 nm. Linear slope and nonzero y-intercept were observed in a Pelgrom plot of the standard deviation of Vth (σVth), which originated from random and process variations. Interestingly, the slope and y-intercept differed for each DNW, and σVth was the smallest at a median DNW of 9 nm. To analyze the observed DNW tendency of σVth, a novel modeling approach based on the error propagation law was proposed. The contribution of gate-metal work function, channel dopant concentration (Nch), and DNW variations (WFV, ∆Nch, and ∆DNW) to σVth were evaluated by directly fitting the developed model to measured σVth. As a result, WFV induced by metal gate granularity increased as channel area increases, and the slope of WFV in Pelgrom plot is similar to that of σVth. As DNW decreased, SNWFETs became robust to ∆Nch but vulnerable to ∆DNW. Consequently, the contribution of ∆DNW, WFV, and ∆Nch is dominant at DNW of 7 nm, 9 nm, and 12, respectively. The proposed model enables the quantifying of the contribution of various variation sources of Vth variation, and it is applicable to all SNWFETs with various LG and DNW. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Fabrication, Characterization, and Applications)
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11 pages, 8246 KiB  
Article
Core–Shell GaAs-Fe Nanowire Arrays: Fabrication Using Electrochemical Etching and Deposition and Study of Their Magnetic Properties
by Eduard V. Monaico, Vadim Morari, Veaceslav V. Ursaki, Kornelius Nielsch and Ion M. Tiginyanu
Nanomaterials 2022, 12(9), 1506; https://doi.org/10.3390/nano12091506 - 28 Apr 2022
Cited by 14 | Viewed by 1817
Abstract
The preparation of GaAs nanowire templates with the cost-effective electrochemical etching of (001) and (111)B GaAs substrates in a 1 M HNO3 electrolyte is reported. The electrochemical etching resulted in the obtaining of GaAs nanowires with both perpendicular and parallel orientations with [...] Read more.
The preparation of GaAs nanowire templates with the cost-effective electrochemical etching of (001) and (111)B GaAs substrates in a 1 M HNO3 electrolyte is reported. The electrochemical etching resulted in the obtaining of GaAs nanowires with both perpendicular and parallel orientations with respect to the wafer surface. Core–shell GaAs-Fe nanowire arrays have been prepared by galvanostatic Fe deposition into these templates. The fabricated arrays have been investigated by means of scanning electron microscopy (SEM) and vibrating sample magnetometry (VSM). The magnetic properties of the polycrystalline Fe nanotubes constituting the shells of the cylindrical structures, such as the saturation and remanence moment, squareness ratio, and coercivity, were analyzed in relation to previously reported data on ferromagnetic nanowires and nanotubes. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Fabrication, Characterization, and Applications)
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10 pages, 4089 KiB  
Article
4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process
by Xiaohong Cheng, Yongliang Li, Fei Zhao, Anlan Chen, Haoyan Liu, Chun Li, Qingzhu Zhang, Huaxiang Yin, Jun Luo and Wenwu Wang
Nanomaterials 2022, 12(5), 889; https://doi.org/10.3390/nano12050889 - 7 Mar 2022
Cited by 10 | Viewed by 5088
Abstract
In this paper, the fabrication and electrical performance optimization of a four-levels vertically stacked Si0.7Ge0.3 channel nanowires gate-all-around transistor are explored in detail. First, a high crystalline quality and uniform stacked Si0.7Ge0.3/Si film is achieved by [...] Read more.
In this paper, the fabrication and electrical performance optimization of a four-levels vertically stacked Si0.7Ge0.3 channel nanowires gate-all-around transistor are explored in detail. First, a high crystalline quality and uniform stacked Si0.7Ge0.3/Si film is achieved by optimizing the epitaxial growth process and a vertical profile of stacked Si0.7Ge0.3/Si fin is attained by further optimizing the etching process under the HBr/He/O2 plasma. Moreover, a novel ACT@SG-201 solution without any dilution at the temperature of 40 °C is chosen as the optimal etching solution for the release process of Si0.7Ge0.3 channel. As a result, the selectivity of Si to Si0.7Ge0.3 can reach 32.84 with a signature of “rectangular” Si0.7Ge0.3 extremities after channel release. Based on these newly developed processes, a 4-levels vertically stacked Si0.7Ge0.3 nanowires gate-all-around device is prepared successfully. An excellent subthreshold slope of 77 mV/dec, drain induced barrier-lowering of 19 mV/V, Ion/Ioff ratio of 9 × 105 and maximum of transconductance of ~83.35 μS/μm are demonstrated. However, its driven current is only ~38.6 μA/μm under VDS = VGS = −0.8 V due to its large resistance of source and drain (9.2 × 105 Ω). Therefore, a source and drain silicide process is implemented and its driven current can increase to 258.6 μA/μm (about 6.7 times) due to the decrease of resistance of source and drain to 6.4 × 104 Ω. Meanwhile, it is found that a slight increase of leakage after the silicide process online results in a slight deterioration of the subthreshold slope and Ion/Ioff ratio. Its leakage performance needs to be further improved through the co-optimization of source and drain implantation and silicide process in the future. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Fabrication, Characterization, and Applications)
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11 pages, 2884 KiB  
Article
High-Performance Laterally Oriented Nanowire Solar Cells with Ag Gratings
by Yangan Zhang, Yao Li, Xueguang Yuan, Xin Yan and Xia Zhang
Nanomaterials 2021, 11(11), 2807; https://doi.org/10.3390/nano11112807 - 22 Oct 2021
Cited by 5 | Viewed by 1422
Abstract
A laterally oriented GaAs p-i-n nanowire solar cell with Ag gratings is proposed and studied via coupled three-dimensional optoelectronic simulations. The results show that the gratings significantly enhance the absorption of nanowire for both TM and TE polarized light due to the combined [...] Read more.
A laterally oriented GaAs p-i-n nanowire solar cell with Ag gratings is proposed and studied via coupled three-dimensional optoelectronic simulations. The results show that the gratings significantly enhance the absorption of nanowire for both TM and TE polarized light due to the combined effect of grating diffraction, excitation of plasmon polaritons, and suppression of carrier recombination. At an optimal grating period, the absorption at 650–800 nm, which is an absorption trough for pure nanowire, is substantially enhanced, raising the conversion efficiency from 8.7% to 14.7%. Moreover, the gratings enhance the weak absorption at long wavelengths and extend the absorption cutoff wavelength for ultrathin nanowires, yielding a remarkable efficiency of 13.3% for the NW with a small diameter of 90 nm, 2.6 times that without gratings. This work may pave the way toward the development of ultrathin high-efficiency nanoscale solar cells. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Fabrication, Characterization, and Applications)
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18 pages, 32877 KiB  
Article
Temperature-Dependent Superplasticity and Strengthening in CoNiCrFeMn High Entropy Alloy Nanowires Using Atomistic Simulations
by Pawan Kumar Tripathi, Yu-Chen Chiu, Somnath Bhowmick and Yu-Chieh Lo
Nanomaterials 2021, 11(8), 2111; https://doi.org/10.3390/nano11082111 - 19 Aug 2021
Cited by 11 | Viewed by 4032
Abstract
High strength and ductility, often mutually exclusive properties of a structural material, are also responsible for damage tolerance. At low temperatures, due to high surface energy, single element metallic nanowires such as Ag usually transform into a more preferred phase via nucleation and [...] Read more.
High strength and ductility, often mutually exclusive properties of a structural material, are also responsible for damage tolerance. At low temperatures, due to high surface energy, single element metallic nanowires such as Ag usually transform into a more preferred phase via nucleation and propagation of partial dislocation through the nanowire, enabling superplasticity. In high entropy alloy (HEA) CoNiCrFeMn nanowires, the motion of the partial dislocation is hindered by the friction due to difference in the lattice parameter of the constituent atoms which is responsible for the hardening and lowering the ductility. In this study, we have examined the temperature-dependent superplasticity of single component Ag and multicomponent CoNiCrFeMn HEA nanowires using molecular dynamics simulations. The results demonstrate that Ag nanowires exhibit apparent temperature-dependent superplasticity at cryogenic temperature due to (110) to (100) cross-section reorientation behavior. Interestingly, HEA nanowires can perform exceptional strength-ductility trade-offs at cryogenic temperatures. Even at high temperatures, HEA nanowires can still maintain good flow stress and ductility prior to failure. Mechanical properties of HEA nanowires are better than Ag nanowires due to synergistic interactions of deformation twinning, FCC-HCP phase transformation, and the special reorientation of the cross-section. Further examination reveals that simultaneous activation of twining induced plasticity and transformation induced plasticity are responsible for the plasticity at different stages and temperatures. These findings could be very useful for designing nanowires at different temperatures with high stability and superior mechanical properties in the semiconductor industry. Full article
(This article belongs to the Special Issue Semiconductor Nanowires: Fabrication, Characterization, and Applications)
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