Advanced Sensors in Atomic Level
A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Sensor Materials".
Deadline for manuscript submissions: 25 June 2025 | Viewed by 2844
Special Issue Editors
Interests: electrochemical sensors; semiconductor sensors; optical sensors; functional sensing nanomaterials; environmental monitoring; wireless sensor networks
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
The progress of modern information technology largely relies on the development of integrated circuits based on semiconductor silicon. Currently, due to inherent physical laws such as short-channel effects and limitations in manufacturing costs, further reducing the size of silicon transistors has become increasingly challenging. Integration and size reduction are crucial for sensors. Atomic-level materials have unique physical and chemical properties, bringing new possibilities for sensor development.
This Special Issue invites experts from relevant fields to share the latest progress including but not limited to the development of atomic-level materials (e.g., zero/one/two/three-dimensional materials, single-atom catalysts) for advanced sensors, detection technologies developed using atomic-level sensors, and detection technologies for atoms. Moreover, we also encourage the sharing of efforts made in applying these sensors in fields such as the environment, energy, health, and drugs to demonstrate their significant potential.
We invite the submission of original research papers, reviews, and perspectives that address the challenges and opportunities in this field. The topics of interest include but are not limited to the following:
Sensors developed based on atomic-level materials;
The design of atomic-sized sensor device structures;
Advanced sensors for detecting atoms;
Advanced integration of atomic-level sensors;
Applications of atomic-level sensors.
Dr. Zehui Li
Dr. Kunchan Wang
Guest Editors
Manuscript Submission Information
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Keywords
- advanced sensors
- nanomaterials
- sensor technologies
- MEMS/NEMS
- precise atomic regulation
- environmental monitoring
- medical monitoring
- material detection
- photoelectric detection
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Planned Papers
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Title: Aggregation-induced emission materials for chemical and biological sensing
Authors: Leijing Liu*, Zhe Zhai, Bin Xu, Wenjing Tian
Affiliation: Jilin University
Abstract: Aggregation-induced emission (AIE) materials have emerged as a new class of fluorescent materials that exhibit enhanced emission in the aggregated state. This unique property overcomes the aggregation-caused quenching (ACQ) issue and opens up new possibilities for highly sensitive and selective sensing applications. This review focuses on the recent progress of AIE materials in the fields of chemical and biological sensing. The unique AIE phenomenon and its mechanism are introduced. The design and synthesis of various AIE - based sensors for detecting different chemical and biological analytes including biomolecules, ions, and small organic molecules are discussed. The applications of these sensors in areas such as disease diagnosis and environmental monitoring are also highlighted.
Title: Selective detection of mustard gas simulant 2-CEES based on characteristic peaks of laminated MOS sensors
Authors: Yadong Liu a, Siyue Zhao a, Lijuan You a, Yong Xu a, Renjun Si b, Shunping Zhang b
Affiliation: aInstitute of NBC Defence, Beijing 102205, PR China
bState Key Laboratory of Material Processing and Die &Mould Technology, Department of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China
Abstract: Poor selectivity is one of the main bottlenecks restricting the development of the metal oxide semiconductor (MOS) sensors. In this paper, using 2-CEES as the target gas, (Pt+Pd+Rh)@Al2O3 as the catalytic membrane material and (Pt+Rh)@WO3 as the gas sensitive membrane material, we have proposed a scheme to improve the selectivity of a catalytic membrane/gas sensitive membrane laminated MOS sensor under dynamic modulation of temperature. By testing 2-CEES and 12 kinds of battlefield environment simulation gases, the results showed that the (Pt+Pd+Rh)@Al2O3/(Pt+Rh)@WO3 sensor, under a certain condition of temperature dynamic modulation (variable temperature of 100 ℃ to 400 ℃ for the catalytic membrane, the highest temperature was held for 1 s, and the lowest temperature was held for 2 s), distinct characteristic peaks appeared on the G-T curves of the resistance response to 2-CEES only. The quantification of the characteristic peaks was performed by peak heights, and the peak height of 1 mg/m3 2-CEES was obtained up to 6.12, while the peak heights of the other gases at the same concentration were less than 1. The peak height of 2-CEES was significantly higher than that of other gases, which verified the high selectivity of the sensor for 2-CEES. Meanwhile, the sensor also showed good sensitivity, response/recovery time and stability for 2-CEES under the above temperature dynamic modulation. This work has provided an important reference for the selectivity improvement of MOS sensors for mustard.