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Energies
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Wide Bandgap Semiconductors and Their Applications
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Wide Bandgap Semiconductors and Their Applications

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "F: Electrical Engineering".

Deadline for manuscript submissions: closed (10 November 2021) | Viewed by 15494

Special Issue Editor

Prof. Idir Nadir

E-Mail Website1 Website2 Website3
Guest Editor
University of Lille, Avenue Henri Poincaré, Cité scientifique - 59650 Villeneuve d'Ascq, France
Interests: power electronics; semiconductor components; SiC and GaN; passive components; inductors; planar transformers; characterization; modeling; magnetic materials; design methodologies; thermal design; high-frequency gan-converters; power density; electromagnetic compatibility; EMI filters; gate drivers.

Special Issue Information

Dear Colleagues,

The application of wide-bandgap (WBG) semiconductors in power electronics can produce high frequency (HF) converters with a high power density, which is drawing increasing research interest for embedded power systems. In building high frequency and high power-density static converters, with WBG devices, designers must face challenges such as minimizing converter losses and mitigating electromagnetic interference (EMI). Overcoming these challenges requires not only new knowledge in different areas, including power semiconductors characterization, and gate drivers, but also the analysis of physical phenomena like the influence of parasitic elements of power converters on the electrical and electromagnetic performances. Modeling techniques have also become particularly important in building highly integrated power electronics systems. Determination of the electrical, electromagnetic, and thermal performances can help designers to quickly optimize and validate the proposed design. It is well known that, for the high-frequency converters, the EMI and thermal issues are the main challenges for the development of new applications of the WBG in power electronics. This Special Issue will be focused on the applications of WBG devices for power converters. Other aspects are also considered, such as electromagnetic interference and thermal issues, etc. Papers on fundamental research and industrial application are both welcome, with topics of interest that include, but are not limited, to the listed keywords.

Prof. Idir Nadir
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Power electronics converter
  • SiC and GaN Semiconductors characterization and modeling
  • Gate drivers
  • Electromagnetic interference (EMI), HF modeling
  • Electro-thermal modeling, cooling systems
  • Passive components, HF characterization, HF modeling
  • Design method of high-frequency converters, parasitical elements
  • EMI mitigation, filtering, shielding

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Published Papers (4 papers)

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Research

17 pages, 21589 KiB  
Article
Analytical Model and Design of Voltage Balancing Parameters of Series-Connected SiC MOSFETs Considering Non-Flat Miller Plateau of Gate Voltage
by Chengmin Li, Runtian Chen, Saizhen Chen, Chushan Li, Haoze Luo, Wuhua Li and Xiangning He
Energies 2022, 15(5), 1722; https://doi.org/10.3390/en15051722 - 25 Feb 2022
Cited by 13 | Viewed by 2913
Abstract
Series connection is an attractive approach to increase the blocking voltage of SiC power MOSFETs. Currently, the voltage balancing design of the series connection of the SiC MOSFETs highly relies on offline calibration and is challenging in the complex field operation. In this [...] Read more.
Series connection is an attractive approach to increase the blocking voltage of SiC power MOSFETs. Currently, the voltage balancing design of the series connection of the SiC MOSFETs highly relies on offline calibration and is challenging in the complex field operation. In this paper, a quantitative model to assess the voltage balancing performance is proposed to achieve a clear mathematical interpretation of the dynamic response of the voltage imbalance control loop. To begin with, an analytical model of the drain-source voltage rising time during the turn-off transient concerning the non-constant Miller plateau is proposed. Based on the turn-off model of the single device, the voltage imbalance sensitivity (VIS) is proposed to describe the influence of the parameters on the gate driving signals on the voltage imbalance. The VIS parameter can be easily achieved from the behavior of single devices, abandoning the complex variables in series connection. Further, for the typical case, active time delay voltage balancing methods are selected to demonstrate the application of the VIS analysis method. Based on VIS, the accurate close-loop design is proposed for controlling the delayed time among the devices. The proposed analysis and method are verified in simulation and experiment. The paper offers a generalized approach to assess the performance and the design of the series connection of the SiC MOSFETs, which can be further applied in many other methods for parameter design and engineering applications. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors and Their Applications)
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23 pages, 6353 KiB  
Article
Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter
by Rustam Kumar, Chih-Chiang Wu, Ching-Yao Liu, Yu-Lin Hsiao, Wei-Hua Chieng and Edward-Yi Chang
Energies 2021, 14(18), 5996; https://doi.org/10.3390/en14185996 - 21 Sep 2021
Cited by 10 | Viewed by 3266
Abstract
The flyback converters are widely used in low power applications. The switch typically requires 600 V breakdown voltage in order to perform large step-down voltage. Thus, slight variation on the switch control can either permanently damage the switch or decrease the efficiency of [...] Read more.
The flyback converters are widely used in low power applications. The switch typically requires 600 V breakdown voltage in order to perform large step-down voltage. Thus, slight variation on the switch control can either permanently damage the switch or decrease the efficiency of the power conversion. In order to achieve higher power efficiency, the previous literature suggested operating the flyback converter in the discontinuous current mode (DCM). It is then required to understand the critical conditions of the DCM through analyzing the dynamic behavior and discontinuous current mechanism. This paper started from the current waveform analyses, proceeded to the derivation of zero current switching (ZCS) formulation, and finally reached the necessary conditions for the DCM. The entire DCM operation was divided into three phases that subsequently affect the result of the zero voltage switching (ZVS) and then to the ZCS. The experiment shows a power efficiency of over 96% when the output power is around 65 W. The switch used in this paper is a Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) that is advantageous at the high breakdown voltage up to 800 V. The important findings from the experiments include that the output power increases with the increasing input DC voltage and the duty cycle is rather linearly decreasing with the increasing switching frequency when both the zero voltage switching (ZVS) and ZCS conditions are satisfied simultaneously. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors and Their Applications)
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17 pages, 1606 KiB  
Article
A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters
by Ke Li, Paul Leonard Evans, Christopher Mark Johnson, Arnaud Videt and Nadir Idir
Energies 2021, 14(8), 2092; https://doi.org/10.3390/en14082092 - 9 Apr 2021
Cited by 11 | Viewed by 3868
Abstract
In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC [...] Read more.
In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors and Their Applications)
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17 pages, 12124 KiB  
Article
Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations
by Loris Pace, Nadir Idir, Thierry Duquesne and Jean-Claude De Jaeger
Energies 2021, 14(5), 1495; https://doi.org/10.3390/en14051495 - 9 Mar 2021
Cited by 16 | Viewed by 4160
Abstract
Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling [...] Read more.
Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors and Their Applications)
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