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Physics, Electrical and Structural Properties of Dielectric Layers
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Physics, Electrical and Structural Properties of Dielectric Layers

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (10 April 2023) | Viewed by 22900

Special Issue Editor

Prof. Dr. Albena Paskaleva

E-Mail Website
Guest Editor
Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
Interests: physics, technology, electrical, and structural properties of dielectric and semiconductor layers; emerging nonvolatile memories; nanoelectronics; gas sensors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Dielectric materials have a very wide application range in a different kind of sensors and detectors, data storage devices, electro-optic devices, transducers, energy harvesters, etc. This is due to their physical, electrical, and structural properties which give rise to diverse physical phenomena, such as ferroelectric, piezoelectric, pyroelectric effects, etc. In the studies of dielectric materials, of particular interest are issues such as the physics of charged dielectric materials, conduction mechanisms, dielectric polarization and dielectric relaxation mechanisms, space charge, nonlinear effects, and electric aging. Recent advances in deposition and processing of dielectric layers allow for superior control and tailoring of their properties to meet the requirements of a certain application. On the other hand, precise characterization techniques make possible the elucidation of the mechanisms that control these properties on a micro- and nanoscale in close relation to the technology of dielectric layer.

In this Special Issue, recent progress in dielectric layers, their technology, and advanced characterization are addressed. Emerging applications specific to dielectric material are also of particular interest.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Prof. DSc. Albena Paskaleva
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Dielectric materials
  • Dielectric properties
  • Dielectric phenomena
  • Technology of dielectric layers
  • Application of dielectric layers

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Published Papers (7 papers)

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Research

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14 pages, 6612 KiB  
Article
Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters
by Konstantinos Efstathios Falidas, Kati Kühnel, Matthias Rudolph, Maximilian B. Everding, Malte Czernohorsky and Johannes Heitmann
Materials 2022, 15(23), 8325; https://doi.org/10.3390/ma15238325 - 23 Nov 2022
Cited by 3 | Viewed by 2374
Abstract
Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, there is a need for investigation into the influence of the variation in atomic layer [...] Read more.
Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, there is a need for investigation into the influence of the variation in atomic layer deposition (ALD) parameters used for thin high-κ dielectric films (10 nm) made of Al2O3-doped ZrO2. This variation should always be related to the structural uniformity, the electrical characteristics, and the electrical reliability of the capacitors. This paper discusses the influence of different Zr precursor pulse times per ALD cycle and deposition temperatures (283 °C/556 K and 303 °C/576 K) with respect to the capacitance density (C-V), voltage linearity and leakage current density (I-V). Moreover, the dielectric breakdown and TDDB characteristics are evaluated under a wide range of temperatures (223–423 K). Full article
(This article belongs to the Special Issue Physics, Electrical and Structural Properties of Dielectric Layers)
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15 pages, 21705 KiB  
Article
Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers
by Dencho Spassov, Albena Paskaleva, Elżbieta Guziewicz, Wojciech Wozniak, Todor Stanchev, Tsvetan Ivanov, Joanna Wojewoda-Budka and Marta Janusz-Skuza
Materials 2022, 15(18), 6285; https://doi.org/10.3390/ma15186285 - 9 Sep 2022
Cited by 9 | Viewed by 2600
Abstract
Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) structures from the [...] Read more.
Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) structures from the viewpoint of their application as memory cells in charge trapping flash memories. Two different stacks, HfO2/Al2O3 nanolaminates and Al-doped HfO2, are used as the charge trapping layer, and SiO2 (of different thickness) or Al2O3 is used as the tunneling oxide. The charge trapping and memory windows, and retention and endurance characteristics are studied to assess the charge storage ability of memory cells. The influence of post-deposition oxygen annealing on the memory characteristics is also studied. The results reveal that these characteristics are most strongly affected by post-deposition oxygen annealing and the type and thickness of tunneling oxide. The stacks before annealing and the 3.5 nm SiO2 tunneling oxide have favorable charge trapping and retention properties, but their endurance is compromised because of the high electric field vulnerability. Rapid thermal annealing (RTA) in O2 significantly increases the electron trapping (hence, the memory window) in the stacks; however, it deteriorates their retention properties, most likely due to the interfacial reaction between the tunneling oxide and the charge trapping layer. The O2 annealing also enhances the high electric field susceptibility of the stacks, which results in better endurance. The results strongly imply that the origin of electron and hole traps is different—the hole traps are most likely related to HfO2, while electron traps are related to Al2O3. These findings could serve as a useful guide for further optimization of MOHOS structures as memory cells in NVM. Full article
(This article belongs to the Special Issue Physics, Electrical and Structural Properties of Dielectric Layers)
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9 pages, 2989 KiB  
Article
Changes in Permittivity of the Piezoelectric Material PVDF as Functions of the Electrical Field and Temperature
by You Zhou and Mona Zaghloul
Materials 2021, 14(19), 5736; https://doi.org/10.3390/ma14195736 - 1 Oct 2021
Cited by 6 | Viewed by 2910
Abstract
Polyvinylidene Fluoride (PVDF) is becoming a widely used piezoelectric material because of its flexibility, low cost, light weight, and biocompatibility. Its electronic properties, such as its permittivity, can be affected by material crystal structure variations, which also greatly impact the material’s application. It [...] Read more.
Polyvinylidene Fluoride (PVDF) is becoming a widely used piezoelectric material because of its flexibility, low cost, light weight, and biocompatibility. Its electronic properties, such as its permittivity, can be affected by material crystal structure variations, which also greatly impact the material’s application. It is known that external stress and electrical fields can alter the crystal structure of piezoelectric material. In this research, we aim to investigate the relationship between the external electrical field and the permittivity property of PVDF material. The basic standard equations, finite element analysis, and experimental measurement are included in this paper. By using sweeping voltages from −25 V to +25 V using an Agilent Technologies B1500A Semiconductor Device Analyzer, an increase in the permittivity of the PVDF material is observed. In this work, the study of the permittivity change under the application of different electrical fields at room temperature is presented, and the application of the electrical field under different temperatures is also studied and presented. Full article
(This article belongs to the Special Issue Physics, Electrical and Structural Properties of Dielectric Layers)
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10 pages, 4506 KiB  
Article
Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator
by Yuan-Ming Chen, Hsien-Cheng Lin, Kuan-Wei Lee and Yeong-Her Wang
Materials 2021, 14(4), 970; https://doi.org/10.3390/ma14040970 - 18 Feb 2021
Cited by 1 | Viewed by 2192
Abstract
An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an [...] Read more.
An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications. Full article
(This article belongs to the Special Issue Physics, Electrical and Structural Properties of Dielectric Layers)
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17 pages, 3371 KiB  
Article
Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
by Dencho Spassov, Albena Paskaleva, Elżbieta Guziewicz, Vojkan Davidović, Srboljub Stanković, Snežana Djorić-Veljković, Tzvetan Ivanov, Todor Stanchev and Ninoslav Stojadinović
Materials 2021, 14(4), 849; https://doi.org/10.3390/ma14040849 - 10 Feb 2021
Cited by 8 | Viewed by 2664
Abstract
High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other [...] Read more.
High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance. Full article
(This article belongs to the Special Issue Physics, Electrical and Structural Properties of Dielectric Layers)
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8 pages, 2423 KiB  
Article
Improved Intrinsic Nonlinear Characteristics of Ta2O5/Al2O3-Based Resistive Random-Access Memory for High-Density Memory Applications
by Ji-Ho Ryu and Sungjun Kim
Materials 2020, 13(18), 4201; https://doi.org/10.3390/ma13184201 - 21 Sep 2020
Cited by 13 | Viewed by 3581
Abstract
The major hindrance for high-density application of two-terminal resistive random-access memory (RRAM) array design is unintentional sneak path leakage through adjacent cells. Herein, we propose a bilayer structure of Ta2O5/Al2O3-based bipolar type RRAM by evaluating [...] Read more.
The major hindrance for high-density application of two-terminal resistive random-access memory (RRAM) array design is unintentional sneak path leakage through adjacent cells. Herein, we propose a bilayer structure of Ta2O5/Al2O3-based bipolar type RRAM by evaluating the intrinsic nonlinear characteristics without integration with an additional transistor and selector device. We conducted X-ray photoelectron spectroscopy (XPS) analysis with different etching times to verify Ta2O5/Al2O3 layers deposited on the TiN bottom electrode. The optimized nonlinear properties with current suppression are obtained by varying Al2O3 thickness. The maximum nonlinearity (~71) is achieved in a Ta2O5/Al2O3 (3 nm) sample. Furthermore, we estimated the comparative read margin based on the I-V characteristics with different thicknesses of Al2O3 film for the crossbar array applications. We expect that this study about the effect of the Al2O3 tunnel barrier thickness on Ta2O5-based memristors could provide a guideline for developing a selector-less RRAM application. Full article
(This article belongs to the Special Issue Physics, Electrical and Structural Properties of Dielectric Layers)
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Review

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22 pages, 1885 KiB  
Review
Oxides for Rectenna Technology
by Ivona Z. Mitrovic, Saeed Almalki, Serdar B. Tekin, Naser Sedghi, Paul R. Chalker and Stephen Hall
Materials 2021, 14(18), 5218; https://doi.org/10.3390/ma14185218 - 10 Sep 2021
Cited by 10 | Viewed by 5095
Abstract
The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the engineering of a high-frequency [...] Read more.
The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the engineering of a high-frequency rectifier that can convert terahertz and infrared alternating current (AC) signals to usable direct current (DC). The Metal Insulator Metal (MIM) diode has been considered as one of the ideal candidates for the rectenna system. Its unparalleled ability to have a high response time is due to the fast, femtosecond tunneling process that governs current transport. This paper presents an overview of single, double and triple insulator MIM diodes that have been fabricated so far, in particular focusing on reviewing key figures of merit, such as zero-bias responsivity (β0), zero-bias dynamic resistance (R0) and asymmetry. The two major oxide contenders for MInM diodes have been NiO and Al2O3, in combination with HfO2, Ta2O5, Nb2O5, ZnO and TiO2. The latter oxide has also been used in combination with Co3O4 and TiOx. The most advanced rectennas based on MI2M diodes have shown that optimal (β0 and R0) can be achieved by carefully tailoring fabrication processes to control oxide stoichiometry and thicknesses to sub-nanometer accuracy. Full article
(This article belongs to the Special Issue Physics, Electrical and Structural Properties of Dielectric Layers)
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