Solid State Physics in Advanced Power Semiconductors and Other Devices
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 3272
Special Issue Editor
Interests: semiconductor-based energy devices; compound materials for power devices
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Power semiconductors can handle the power flow and convert its form in the system. An ideal power device has zero resistance in the on-state and infinite resistance in the off-state. However, real power devices consume power in the on and off states. To save energy on the Earth, we need to reduce the power loss of the power semiconductors. Automotive applications also demand high-energy conversion efficiency of the power semiconductors. The reliability should be improved even at high temperatures.
Silicon-based power devices have been enhanced by reducing cell density and power loss. Silicon superjunction MOSFETs and field-stop IGBTs have been developed, but the material limits have been an obstacle. Wide band gap materials such as III-V, 4H-SiC, and diamond have begun to be investigated with power switches. These can improve the on-resistance at identical breakdown voltage by decreasing the thickness of the drift layer with low doping concentration. However, solid-state physics and fabrication of wide band gap materials need to be studied further. In addition, the electrical characteristics and formation method of the gate oxide in the MOS-controlled devices are important.
This Special Issue is a timely approach to survey recent progress in the area of advanced power semiconductors and other devices. The articles presented in this Special Issue will cover various topics from silicon to wide band gap materials, device design, numerical simulation, fabrication process, measurement, analysis, electrical characteristics at high temperature, and reliability. The scope is not just about the wide band gap devices. This also includes the silicon-based advanced power semiconductors, energy devices, solar cells, and nanoelectronics.
The Special Issue will cover (but not be limited to) the following topics:
- Advanced power semiconductors
- Solid state physics
- Numerical simulation
- Fabrication
- High voltage switch
- High current switch
- Wide band gap devices including III-V, 4H-SiC, and diamond
- Energy devices
- Solar cells
- Nanoelectronics, etc.
It is our pleasure to invite you to submit review articles, original papers and communications for this Special Issue “Solid State Physics in Advanced Power Semiconductors and Other Devices”.
Prof. Dr. Min-Woo Ha
Guest Editor
Manuscript Submission Information
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Keywords
- advanced power semiconductors
- solid state physics
- numerical simulation
- fabrication
- high voltage
- high current
- wide band gap devices
- energy devices
- solar cells
- nanoelectronics
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