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Micromachines
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Advances in GaN- and SiC-Based Electronics: Design and Applications
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Advances in GaN- and SiC-Based Electronics: Design and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: 31 May 2025 | Viewed by 4616

Special Issue Editor

Prof. Dr. Xiaorong Luo

E-Mail Website
Guest Editor
1. School of Electronics Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610000, China
2. Chengdu University of Information Technology, Chengdu 610225, China
Interests: semiconductor materials and power devices; power integrated circuits

Special Issue Information

Dear Colleagues,

The RF and power electronics industry promote the development of the world’s economy, facilitate highly efficient utilization of energy, and allow convenience in daily life. As the typical representative of wide-bandgap technology, GaN- and SiC-based electronic devices contribute to high-efficiency power conversion and advanced, high-efficiency RF communication systems. To support the expanding markets for electric/ hybrid cars, datacenters, renewable energy generation and conversion, and smart grids, GaN- and SiC-based power devices are required for higher power densities, higher breakdown voltages, and lower losses. The challenge of 5G and future 6G networks requires GaN RF devices with high fT, fmax and high efficiency.

Both challenges can be addressed through the development of advanced GaN- and SiC-based electronics, relying on overall optimization from materials, manufacturing technology, device design, and application development. Despite the impressive developments in the past decade, there are still several scientific issues that need to be addressed in order to overcome the limits of GaN and SiC materials. Some issues include the following: (1) the development of low-defect growth methods; (2) advanced device structure optimization for high performance; (3) the optimization of device processing and passivation, with the aim of maximizing device performance; (4) advanced methodologies for driving and thermal management; (5) application-driven integration on both circuit and system levels; (6) reliability analysis and reliability-enhanced technology.

We look forward to receiving your submissions.

 

Prof. Dr. Xiaorong Luo

Guest Editor

Prof. Dr. Xiaorong Luo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • advanced material structures, growth and characterization
  • power devices
  • RF devices
  • advanced device manufacturing process
  • integration design
  • module technology
  • reliability

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Published Papers (4 papers)

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Research

17 pages, 4684 KiB  
Article
Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress
by Shahid Makhdoom, Na Ren, Ce Wang, Yiding Wu, Hongyi Xu, Jiakun Wang and Kuang Sheng
Micromachines 2025, 16(1), 102; https://doi.org/10.3390/mi16010102 - 16 Jan 2025
Viewed by 570
Abstract
The short-circuit (SC) robustness of SiC MOSFETs is critical for high-power applications, yet 1.2 kV devices often struggle to meet the industry-standard SC withstand time (SCWT) under practical operating conditions. Despite growing interest in higher voltage classes, no prior study has systematically evaluated [...] Read more.
The short-circuit (SC) robustness of SiC MOSFETs is critical for high-power applications, yet 1.2 kV devices often struggle to meet the industry-standard SC withstand time (SCWT) under practical operating conditions. Despite growing interest in higher voltage classes, no prior study has systematically evaluated the SC performance of 1.7 kV SiC MOSFETs. This study provides the first comprehensive evaluation of commercially available 1.7 kV SiC MOSFETs, analyzing their SC performance under varying electrical stress conditions. Results indicate a clear trade-off between SC withstand time (SCWT) and drain-source voltage (VDS), with SCWT decreasing from 32 µs at 400 V to 4 µs at 1100 V. Under 600 V, a condition representative of practical use cases in many high-voltage applications, the devices achieved an SCWT of 12 µs, exceeding the industry-standard 10 µs benchmark—a threshold often unmet by 1.2 kV devices under similar conditions. Failure analysis revealed gate dielectric breakdown as the dominant failure mode at VDS ≤ 600 V, while thermal runaway was observed at higher voltages (VDS = 800 V and 1100 V). These findings underscore the critical importance of robust gate drive designs and effective thermal management. By surpassing the shortcomings of lower voltage classes, 1.7 kV SiC MOSFETs can be a more reliable, and efficient choice for operating at higher voltages in next-generation power systems. Full article
(This article belongs to the Special Issue Advances in GaN- and SiC-Based Electronics: Design and Applications)
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8 pages, 2842 KiB  
Article
A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment
by Fuchun Jia, Qingyuan Chang, Mengdi Li, Yungang Liu, Ziyan Lu, Jifan Zhang, Jinming Lai, Hao Lu, Yang Lu, Bin Hou, Ling Yang and Xiaohua Ma
Micromachines 2024, 15(12), 1448; https://doi.org/10.3390/mi15121448 - 29 Nov 2024
Viewed by 609
Abstract
In this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system. The leakage current and breakdown voltage of the diode are systematically studied. Due [...] Read more.
In this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system. The leakage current and breakdown voltage of the diode are systematically studied. Due to the beveled sidewall treated by the fluorine plasma, the diodes achieve an excellent breakdown voltage (VBR) of 790 V and a low reverse leakage current. In addition, the GaN-on-Si quasi-vertical PiN diode achieves a low specific on-resistance (Ron,sp) of 0.51 mΩ·cm2 and a high Baliga’s figure of merit (BFOM) of 1.22 GW/cm2. The relationship between the total leakage current and the device diameter shows that the sidewall leakage is the main leakage path of the device. Afterwards, the TCAD simulations based on electric field and electric potential reveal that the fluorine plasma treatment is a major factor in suppressing the leakage current and increasing the VBR for a diode with BSFP. This work systematically analyzes the effects of beveled sidewall and fluorine plasma treatment based on the reverse characteristics of the GaN-on-Si quasi-vertical PiN diode and highlights the great potential of the GaN-on-Si PiN diode for various power applications. Full article
(This article belongs to the Special Issue Advances in GaN- and SiC-Based Electronics: Design and Applications)
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10 pages, 4095 KiB  
Article
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer
by Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun and Xiaorong Luo
Micromachines 2024, 15(9), 1158; https://doi.org/10.3390/mi15091158 - 16 Sep 2024
Viewed by 1189
Abstract
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming the [...] Read more.
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming the degradation of other characteristics. The device operation mechanism and characteristics are investigated by TCAD simulation. The results show that the peak electric field and impact ionization at the gate edges are reduced in the PN-HEMT due to the introduced P-GaN buried layer in the buffer layer. This leads to a decrease in the peak drain current (Ipeak) induced by the SET effect and an improvement in the breakdown voltage (BV). Additionally, the locally doped barrier layer provides extra electrons to the channel, resulting in higher saturated drain current (ID,sat) and maximum transconductance (gmax). The Ipeak of the PN-HEMT (1.37 A/mm) is 71.8% lower than that of the conventional AlGaN/GaN HEMT (C-HEMT) (4.85 A/mm) at 0.6 pC/µm. Simultaneously, ID,sat and BV are increased by 21.2% and 63.9%, respectively. Therefore, the PN-HEMT enhances the hardened SET effect of the device without sacrificing other key characteristics of the AlGaN/GaN HEMT. Full article
(This article belongs to the Special Issue Advances in GaN- and SiC-Based Electronics: Design and Applications)
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12 pages, 5870 KiB  
Article
Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process
by Jialin Luo, Yihui Fan, Jing Wan, Xuming Sun and Xiaoxin Liang
Micromachines 2024, 15(4), 546; https://doi.org/10.3390/mi15040546 - 18 Apr 2024
Viewed by 1389
Abstract
This paper presents an ultra-wideband transformer feedback (TFB) monolithic microwave integrated circuit (MMIC) power amplifier (PA) developed using a 0.25 μm gallium nitride (GaN) process. To broaden the bandwidth, a drain-to-gate TFB technique is employed in this PA design, achieving a 117% relative [...] Read more.
This paper presents an ultra-wideband transformer feedback (TFB) monolithic microwave integrated circuit (MMIC) power amplifier (PA) developed using a 0.25 μm gallium nitride (GaN) process. To broaden the bandwidth, a drain-to-gate TFB technique is employed in this PA design, achieving a 117% relative −3 dB bandwidth, extending from 5.4 GHz to 20.3 GHz. At a 28 V supply, the designed PA circuit achieves an output power of 25.5 dBm and a 14 dB small-signal gain in the frequency range of 6 to 19 GHz. Within the 6 to 19 GHz frequency range, the small-signal gain exhibits a flatness of less than 0.78 dB. The PA chip occupies an area of 1.571 mm2. This work is the first to design a power amplifier with on-chip transformer feedback in a compound semiconductor MMIC process, and it enables the use of the widest bandwidth power amplifier on-chip transformer matching network. Full article
(This article belongs to the Special Issue Advances in GaN- and SiC-Based Electronics: Design and Applications)
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