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Nanoarchitectonics of the Fourth Fundamental Electronic Component: Memristor, Meminductor and...
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Nanoarchitectonics of the Fourth Fundamental Electronic Component: Memristor, Meminductor and Memcapacitor

A topical collection in Nanomaterials (ISSN 2079-4991). This collection belongs to the section "Nanoelectronics, Nanosensors and Devices".

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Editors

Dr. Firman Simanjuntak

E-Mail Website
Collection Editor
School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK
Interests: neuromorphic computing; sensors; data storage; chaos identification
Dr. Yao-Feng Chang

E-Mail Website
Collection Editor
1. Microelectronics Research Center, The University of Texas, Austin, TX 78758, USA
2. Intel Corporation, Hillsboro, OR 97124, USA
Interests: memristor; memcomputing; neuromorphic systems; biomimic smart system
Special Issues, Collections and Topics in MDPI journals
Dr. Sridhar Chandrasekaran

E-Mail Website
Collection Editor
School of Electronic Engineering, Vellore Institute of Technology, Chennai, Tamil Nadu, India
Interests: metal oxide memristor; flexible wearable; artificial synapse; wearable artificial memristors

Topical Collection Information

Dear Colleagues,

In 1971, Chua L.O. theorised a new classical electronic, memristor, as the fourth component complementing resistor, inductor, and capacitor. Despite the early physical phenomenon observed by Gibbons and Beadle in 1964, the development of the memristor did not receive much attention until the Hewlett-Packard Lab first elucidated that the ionic electron dynamic was the cause behind the phenomenon in 2008. Since then, its unique resistance tunability has received significant attention due to its potential application for data storage. However, we later found that besides its resistance (R), its inductance (I) and capacitance (C) can also be tuned! And thus, it is also called the meminductor and the memcapacitor, respectively. Any of its R, I or C can be reconfigured and used for different purposes. Moreover, the architectonic of this device is small, fast and low-powered. Henceforth, we foresee that the application of this technology is endless; memories, sensors, neuromorphic computing, random number generators, physically unclonable functions, advanced logic and adaptive/reconfigurable circuits are just a few examples from its long list of potential applications in both analogue and digital electronics.

This Topical Collection addresses the latest advances in the nanoarchitechtonics of the memristor, meminductor and memcapacitor. We invite scientists and engineers to contribute original research, reviews and perspective articles to inspire and shape the future directive towards the deployment of this fourth component for next-generation electronics. The scope of this collection includes, but is not limited to:

  • Nanoscale fabrication, novel architecture and processes;
  • Surface/interface and electrical characterisation, methodology and benchmarking;
  • Multifunctional capabilities: in-memory computing, in-memory sensing and beyond;
  • Integration and embedded techniques.

Dr. Firman Simanjuntak
Dr. Yao-Feng Chang
Dr. Sridhar Chandrasekaran
Collection Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanofabrication
  • memristor
  • meminductor
  • memcapacitor
  • nanoarchitechtonic
  • nanoelectronics
  • neuromorphic computing

Published Papers (3 papers)

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2024

Jump to: 2023

12 pages, 13289 KiB  
Article
Setting Plasma Immersion Ion Implantation of Ar+ Parameters towards Electroforming-Free and Self-Compliance HfO2-Based Memristive Structures
by Olga Permiakova, Sergey Pankratov, Alexandr Isaev, Andrew Miakonkikh, Yuri Chesnokov, Andrey Lomov and Alexander Rogozhin
Nanomaterials 2024, 14(10), 831; https://doi.org/10.3390/nano14100831 - 9 May 2024
Cited by 1 | Viewed by 1022
Abstract
Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO2-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar+ [...] Read more.
Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO2-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar+ plasma immersion ion implantation (PI) affects the Pt/HfO2 (4 nm)/HfOXNY (3 nm)/TaN electroforming voltage. The advantage of PI is the simultaneous and uniform processing of the entire wafer. It is thought that Ar+ implantation causes defects to the oxide matrix, with the majority of the oxygen anions being shifted in the direction of the TaN electrode. We demonstrate that it is feasible to reduce the electroforming voltages from 7.1 V to values less than 3 V by carefully selecting the implantation energy. A considerable decrease in the electroforming voltage was achievable at an implantation energy that provided the dispersion of recoils over the whole thickness of the oxide without significantly affecting the HfOXNY/TaN interface. At the same time, Ar+ PI at higher and lower energies did not produce the same significant decrease in the electroforming voltage. It is also possible to obtain self-compliance of current in the structure during electroforming after PI with energy less than 2 keV. Full article
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14 pages, 3325 KiB  
Article
Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities
by Dominik Knapic, Alexey Minenkov, Elena Atanasova, Ivana Zrinski, Achim Walter Hassel and Andrei Ionut Mardare
Nanomaterials 2024, 14(4), 381; https://doi.org/10.3390/nano14040381 - 19 Feb 2024
Viewed by 1628
Abstract
A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional [...] Read more.
A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional spread ranging between 22 and 64 at.% Ti was anodically oxidised, the mixed oxide being the active layer in MIM-type structures completed by Pt discreet top electrode patterning. By studying I–U sweeps, memristors with self-rectifying and volatile behaviour were identified. Moreover, all the analysed memristors demonstrated multilevel properties. The best-performing memristors showed HRS/LRS (high resistive state/low resistive state) ratios between 4 and 6 × 105 and very good retention up to 106 successive readings. The anodic memristors grown along the compositional spread showed very good endurance up to 106 switching cycles, excluding those grown from alloys containing between 31 and 39 at.% Ti, which withstood only 10 switching cycles. Taking into consideration all the parameters studied, the Nb-46 at.% Ti composition was screened as the parent metal alloy composition, leading to the best-performing anodic memristor in this alloy system. The results obtained suggest that memristive behaviour is based on an interfacial non-filamentary type of resistive switching, which is consistent with the performed cross-sectional TEM structural and chemical characterisation. Full article
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2023

Jump to: 2024

13 pages, 2947 KiB  
Article
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System
by Dongyeol Ju, Sunghun Kim and Sungjun Kim
Nanomaterials 2023, 13(17), 2477; https://doi.org/10.3390/nano13172477 - 1 Sep 2023
Cited by 10 | Viewed by 1416
Abstract
In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under [...] Read more.
In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications. Full article
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