Advanced Optical Materials and Devices II

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (30 June 2021) | Viewed by 16833

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INESC-TEC and Department of Physics and Astronomy, University of Porto, Porto, Portugal
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INESC-TEC, Porto, Portugal
Interests: optical fiber sensors for monitoring of physical parameters; interrogation systems based on optical fiber rings; microstructured fibers for Raman spectroscopy
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Departamento de Física, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Caparica, Portugal
Interests: thin films; functional molecular systems; sensors and transducers; electrical and optical properties of materials; biomedical sciences
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LIBPhys, Departmento de Física, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica, Portugal
Interests: sensors; organic devices; layer-by-layer films; solid state physics; optical devices; drug delivery systems; liposomes; Langmuir films; adsorption; effect of radiation on biological matter
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Special Issue Information

Dear Colleagues,

The first Special Issue on “Advanced Optical Materials and Devices” was published between 2019 and 2020, with 13 high-quality papers in different topics of photonics. We are extremely grateful to all the authors who published their works in that Special Issue, whose great efforts made it a big success.

The first issue was such a success, in fact, that the Guest Editors have decided to launch a second edition of this Special Issue entitled “Advanced Optical Materials and Devices II”. This Special Issue presents several important contributions to this emergent field of research in advanced optical materials and devices.

For this Special Issue, the main topics will include new inorganic and organic optical materials, semiconductors, smart materials, nanostructures, metamaterials, plasmonics, nanocarbon, nanotubes, graphene, and bio-inspired materials. The objective of this Special Issue is also to present photonics devices based on these main material topics and their applications in engineering, medicine, environment, and others.

The Guest Editors encourage all researchers to submit new contributions, new results, and new research solutions in the field of “Materials and Advanced Optical Devices II”. 


Prof. Dr. Orlando Frazão
Dr. Maria Raposo
Dr. Paulo A. Ribeiro
Dr. Susana Silva
Guest Editors

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Published Papers (3 papers)

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Research

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8 pages, 2479 KiB  
Communication
Efficient Deep-Blue Electroluminescence Employing Heptazine-Based Thermally Activated Delayed Fluorescence
by Jie Li, Jincheng Zhang, Heqi Gong, Li Tao, Yanqing Wang and Qiang Guo
Photonics 2021, 8(8), 293; https://doi.org/10.3390/photonics8080293 - 22 Jul 2021
Cited by 9 | Viewed by 2957
Abstract
We report an efficient deep-blue organic light-emitting diode (OLED) based on a heptazine-based thermally activated delayed fluorescent (TADF) emitter, 2,5,8-tris(diphenylamine)-tri-s-triazine (HAP-3DPA). The deep-blue-emitting compound, HAP-3DPA, was designed and synthesized by combining the relatively rigid electron-accepting heptazine core with three electron-donating diphenylamine [...] Read more.
We report an efficient deep-blue organic light-emitting diode (OLED) based on a heptazine-based thermally activated delayed fluorescent (TADF) emitter, 2,5,8-tris(diphenylamine)-tri-s-triazine (HAP-3DPA). The deep-blue-emitting compound, HAP-3DPA, was designed and synthesized by combining the relatively rigid electron-accepting heptazine core with three electron-donating diphenylamine units. Due to the rigid molecular structure and intramolecular charge transfer characteristics, HAP-3DPA in solid state presented a high photoluminescence quantum yield of 67.0% and obvious TADF nature with a short delayed fluorescent lifetime of 1.1 μs. Most importantly, an OLED incorporating HAP-3DPA exhibited deep-blue emission with Commission Internationale de l’Eclairage (CIE) coordinates of (0.16, 0.13), a peak luminance of 10,523 cd/m−2, and a rather high external quantum efficiency of 12.5% without any light out-coupling enhancement. This finding not only reports an efficient deep-blue TADF molecule, but also presents a feasible pathway to construct high-performance deep-blue emitters and devices based on the heptazine skeleton. Full article
(This article belongs to the Special Issue Advanced Optical Materials and Devices II)
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19 pages, 5228 KiB  
Article
Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films
by Qais M. Al-Bataineh, Mahmoud Telfah, Ahmad A. Ahmad, Ahmad M. Alsaad, Issam A. Qattan, Hakim Baaziz, Zoulikha Charifi and Ahmad Telfah
Photonics 2020, 7(4), 112; https://doi.org/10.3390/photonics7040112 - 18 Nov 2020
Cited by 51 | Viewed by 4718
Abstract
We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, [...] Read more.
We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors. Full article
(This article belongs to the Special Issue Advanced Optical Materials and Devices II)
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Review

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27 pages, 8405 KiB  
Review
A Review on X-ray Excited Emission Decay Dynamics in Inorganic Scintillator Materials
by Vineet Kumar and Zhiping Luo
Photonics 2021, 8(3), 71; https://doi.org/10.3390/photonics8030071 - 4 Mar 2021
Cited by 56 | Viewed by 8259
Abstract
Scintillator materials convert high-energy radiation into photons in the ultraviolet to visible light region for radiation detection. In this review, advances in X-ray emission dynamics of inorganic scintillators are presented, including inorganic halides (alkali-metal halides, alkaline-earth halides, rare-earth halides, oxy-halides, rare-earth oxyorthosilicates, halide [...] Read more.
Scintillator materials convert high-energy radiation into photons in the ultraviolet to visible light region for radiation detection. In this review, advances in X-ray emission dynamics of inorganic scintillators are presented, including inorganic halides (alkali-metal halides, alkaline-earth halides, rare-earth halides, oxy-halides, rare-earth oxyorthosilicates, halide perovskites), oxides (binary oxides, complex oxides, post-transition metal oxides), sulfides, rare-earth doped scintillators, and organic-inorganic hybrid scintillators. The origin of scintillation is strongly correlated to the host material and dopants. Current models are presented describing the scintillation decay lifetime of inorganic materials, with the emphasis on the short-lived scintillation decay component. The whole charge generation and the de-excitation process are analyzed in general, and an essential role of the decay kinetics is the de-excitation process. We highlighted three decay mechanisms in cross luminescence emission, exitonic emission, and dopant-activated emission, respectively. Factors regulating the origin of different luminescence centers controlling the decay process are discussed. Full article
(This article belongs to the Special Issue Advanced Optical Materials and Devices II)
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