Changes in the Crop Production System Under Global Warming and Cultivation Approaches

A special issue of Plants (ISSN 2223-7747). This special issue belongs to the section "Crop Physiology and Crop Production".

Deadline for manuscript submissions: 31 December 2025 | Viewed by 768

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State Key Laboratory of Rice Biology and Breeding, China National Rice Research Institute, Hangzhou 311400, China
Interests: rice; plant resistance to abiotic and biotic stress; plant genetics; plant physiology; plant breeding
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Dear Colleagues,

In the past 100 years, the increasing concentration of atmospheric greenhouse gases caused by human activities has triggered a rise in the global surface temperature. The years 2015–2022 were the warmest eight years since meteorological observation records began, and this was particularly clear in the steady and continuous warming of the world’s oceans. A large number of scientific studies have proved that the global surface temperature will rise by 0.75–4.0 °C by 2100, if no effective measures are taken to reduce carbon emissions. According to data from the World Meteorological Organization, extreme heat waves, droughts and devastating floods in 2022 affected millions of people worldwide and caused billions of dollars of economic losses. Regarding climatic factors, climate change in recent decades has had an adverse impact on crop yields around the world. Therefore, research concerning agronomic optimization and the enhancement of crop productivity in the context of climate change is urgently needed. In this Special Issue, we welcome the submission of original research or reviews papers that present innovative approaches to the enhancement of crop productivity and the resistance of crops under adverse environmental factors, and papers that uncover the corresponding regulatory mechanisms.

Dr. Tingting Chen
Dr. Guanfu Fu
Dr. Longxing Tao
Dr. Yuxiang Zeng
Guest Editors

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Keywords

  • rice quality
  • abiotic stress
  • high yield
  • global warming

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Published Papers (1 paper)

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Research

19 pages, 13809 KiB  
Article
Silicon Nutrition Improves Lodging Resistance of Rice Under Dry Cultivation
by Hao Jiang, Zixian Jiang, Hongcheng Zhang, Yunzhe Li, Wanchun Li, Kaiyu Gao, Xintong Ma, Guan Wang, Xiaoshuang Wei and Zhihai Wu
Plants 2025, 14(3), 361; https://doi.org/10.3390/plants14030361 - 24 Jan 2025
Viewed by 567
Abstract
Silicon (Si) has been proven to enhance the stress resistance of rice, but its effect on the lodging resistance of rice under dry cultivation (DCR) is still unclear. The purpose of this experiment is to clarify the appropriate amount of silicon fertilizer for [...] Read more.
Silicon (Si) has been proven to enhance the stress resistance of rice, but its effect on the lodging resistance of rice under dry cultivation (DCR) is still unclear. The purpose of this experiment is to clarify the appropriate amount of silicon fertilizer for DCR to resist lodging and to elucidate how it coordinates lodging resistance and yield. This experiment used the ‘Suigeng 18’ cultivar as the material and set six silicon fertilizers (SiO2) with dosages of 0, 15, 30, 45, 60, and 75 kg·ha−1 (Si0, Si1, Si2, Si3, Si4, Si5). Analyze the effects and key indicators of silicon on lodging resistance of DCR from the perspectives of plant weight distribution, stem structure and composition, and root architecture. The results showed that the Si3 treatment had the highest yield and the lowest lodging index (LI). Si3 increases the weight of the upper three leaves and 4–5 internodes, thereby promoting panicle weight and yield. An increase of 13.38% in 2/3PWSI (weight of the 4th–5th stems and upper three leaves/weight of the 1st–3rd stems and lower leaves) can reflect the promoting effect of silicon on stem and leaf development near the panicle. Si3 reduces the GA/IAA value, shortens the length of the second internode, and increases the diameters of the major and minor axes, thereby increasing culm thickness and section modulus (SM), achieving the effect of “short and thick”. Si3 also increases the content of silicon and non-structural carbohydrates (NSCs) in the second internode, and increases lignin and cellulose content by upregulating the expression levels of CAD7, PAL, COMT, and CesA4 genes, thereby increasing fullness and flexural strength (M), achieving “short, thick, and strong” and reducing LI. The 38.95% reduction in IFL (second internode length/fullness) reflects the positive effect of silicon on the “short, thick, and strong” stem. In the underground part, adding silicon reduces the CTK/IAA value of roots, and increases root length, root tip number, root surface area, and root weight. The key to coordinating the lodging resistance and yield of DCR with appropriate silicon dosage is to reduce the IFL in the second internode and increase 2/3 PWSI and root growth. The key to DCR and breeding is to focus on the relationship between basal internode length and fullness, as well as stem and leaf growth near the panicle. Full article
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