Advancements in MOSFET and Field Effect Devices
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: closed (15 April 2023) | Viewed by 7182
Special Issue Editor
Interests: novel MOSFET design, simulation and reliability; junctionless transistor; exploratory beyond CMOS devices; solar cells and nanotechnology
Special Issue Information
Dear Colleagues,
MOSFET had been the workhorse of the Integrated Circuits for close to 50 years and, starting from late 1980s, the state-of-the-art MOSFET structure moved away from the planar structure, which was one of the foundational features of the Integrated Circuits. The evolution from Multigate, DELTA to FinFETs, GAAFET, Nanowire and junctionless transistors have ushered in a new era. The 3D Transistor structure has advanced to channel lengths as small as 3 nm and projected to progress to 2 nm. The 3D transistor structure had been extended to high mobility Ge-FinFETs and to III-V compound transistors. Numerous challenges exist in the reliable fabrication and integration of these advanced devices as well as modeling and understanding the nanoscale transport properties, the role of ballistic transport, channel quantization, dopant distribution, charge trapping, scaling issues and degradation factors. In this Special Issue the progress made in the theoretical and experimental aspects of the advanced Silicon and non-Silicon MOSFETs will be presented.
Prof. Dr. Chettypalayam (Selva) Selvakumar
Guest Editor
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Keywords
- silicon and III-V FinFETs
- FinFET design
- semiconductor device physics
- FinFET process
- FinFET simulation
- FinFET reliability
- 3D transistor
- junctionless transistors
- tunnel FETs
- silicon nanowire
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