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Nanomaterials
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Low-Dimensional Semiconductor Materials: Fabrication, Characterization and Applications
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Low-Dimensional Semiconductor Materials: Fabrication, Characterization and Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (30 August 2022) | Viewed by 4794

Special Issue Editors

Dr. Ang Li

E-Mail Website
Guest Editor
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Interests: in situ TEM; semiconductor nanostructure; nanocatalysis
Prof. Dr. Feng Li

E-Mail Website
Guest Editor
School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Interests: nanophotonics; optical devices; optoelectronics; optical topological structures and devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The characteristic of low dimensionality in two-dimensional, one-dimensional, and zero-dimensional semiconductors creates superior properties which have attracted much attention for decades. Very recently, from the structural fabrication dimension down to the sub-nanometer or even to the atomic scale, confinement-induced performance has been shown to overwhelm the bulk counterparts and lead to extraodinary electronic, optical, mechanical and chemical behaviors. Meanwhile, the requirement for local morphologic, compositional and crystallographic information has encouraged the critical revolution of analytical characterization methods. Emerging application fields related to the fine control and manipulation of their function, durability, and capability have thrived on nanomaterials science and technology.

This Special Issue entitled “Low-Dimensional Semiconductor Materials: Fabrication, Characterization and Applications” brings together original research and reviews which focus on the exploration of novel low-dimensional semiconductor materials and their nanostructures. The scope includes research at the frontier of low-dimensional functional semiconductors, oxide heterostructures, organic materials, perovskites, quantum materials and catalysts. We invite authors to contribute leading results and reviews covering the scope outlined above, which showcase the depth and breadth of the current progress in the field of low-dimensional semiconductors.

Dr. Ang Li
Prof. Dr. Feng Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • low-dimensional semiconductor structures
  • nanocrystal growth
  • clusters
  • quantum dots
  • nanowires
  • mechanical properties
  • quantum materials
  • nanofabrication
  • spintronics
  • MEMS
  • low-dimensional organic nanocrystals
  • nanocatalysis
  • atomic-scale imaging
  • in situ characterization
  • nanomedicine

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Published Papers (4 papers)

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Research

14 pages, 3264 KiB  
Article
Postproduction Approach to Enhance the External Quantum Efficiency for Red Light-Emitting Diodes Based on Silicon Nanocrystals
by Hiroyuki Yamada, Junpei Watanabe, Kazuhiro Nemoto, Hong-Tao Sun and Naoto Shirahata
Nanomaterials 2022, 12(23), 4314; https://doi.org/10.3390/nano12234314 - 5 Dec 2022
Cited by 5 | Viewed by 2158
Abstract
Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high quantum yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, their low optical absorbance character inhibits the [...] Read more.
Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high quantum yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, their low optical absorbance character inhibits the bright emission from the SiQDs for phosphor-type light emitting diodes (LEDs). In contrast, a strong electroluminescence is potentially given by serving SiQDs as an emissive layer of current-driven LEDs with (Si-QLEDs) because the charged carriers are supplied from electrodes unlike absorption of light. Herein, we report that the external quantum efficiency (EQE) of Si-QLED was enhanced up to 12.2% by postproduction effect which induced by continuously applied voltage at 5 V for 9 h. The active layer consisted of SiQDs with a diameter of 2.0 nm. Observation of the cross-section of the multilayer QLEDs device revealed that the interparticle distance between adjacent SiQDs in the emissive layer is reduced to 0.95 nm from 1.54 nm by “post-electric-annealing”. The shortened distance was effective in promoting charge injection into the emission layer, leading improvement of the EQE. Full article
(This article belongs to the Special Issue Low-Dimensional Semiconductor Materials: Fabrication, Characterization and Applications)
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14 pages, 13242 KiB  
Article
Mechanical Characterization of Two-Segment Free-Standing ZnO Nanowires Using Lateral Force Microscopy
by János Volk, János Radó, Zsófia Baji and Róbert Erdélyi
Nanomaterials 2022, 12(23), 4120; https://doi.org/10.3390/nano12234120 - 22 Nov 2022
Viewed by 1303
Abstract
Mechanical characterization of quasi one-dimensional nanostructures is essential for the design of novel nanoelectromechanical systems. However, the results obtained on basic mechanical quantities, such as Young’s modulus and fracture strength, show significant standard deviation in the literature. This is partly because of diversity [...] Read more.
Mechanical characterization of quasi one-dimensional nanostructures is essential for the design of novel nanoelectromechanical systems. However, the results obtained on basic mechanical quantities, such as Young’s modulus and fracture strength, show significant standard deviation in the literature. This is partly because of diversity in the quality of the nanowire, and partly because of inappropriately performed mechanical tests and simplified mechanical models. Here we present orientation-controlled bending and fracture studies on wet chemically grown vertical ZnO nanowires, using lateral force microscopy. The lateral force signal of the atomic force microscope was calibrated by a diamagnetic levitation spring system. By acquiring the bending curves of 14 nanowires, and applying a two-segment mechanical model, an average bending modulus of 108 ± 17 GPa was obtained, which was 23% lower than the Young’s modulus of bulk ZnO in the [0001] direction. It was also found that the average fracture strain and stress inside the nanowire was above 3.1 ± 0.3 % and 3.3 ± 0.3 GPa, respectively. However, the fracture of the nanowires was governed by the quality of the nanowire/substrate interface. The demonstrated technique is a relatively simple and productive way for the accurate mechanical characterization of vertical nanowire arrays. Full article
(This article belongs to the Special Issue Low-Dimensional Semiconductor Materials: Fabrication, Characterization and Applications)
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13 pages, 3444 KiB  
Article
Optimization Temperature Programming of Microwave-Assisted Synthesis ZnO Nanoneedle Arrays for Optical and Surface-Enhanced Raman Scattering Applications
by Tung-Hao Chang, Yu-Cheng Chang, Chung-I Lee, Ying-Ru Lin and Fu-Hsiang Ko
Nanomaterials 2022, 12(22), 3989; https://doi.org/10.3390/nano12223989 - 12 Nov 2022
Cited by 4 | Viewed by 1851
Abstract
This study used a rapid and simple microwave-assisted synthesis method to grow ZnO nanoneedle arrays on the silicon substrate with the ZnO seed layer. The effects of reaction temperature and time on the lengths of ZnO nanoneedle arrays were investigated. The appropriate temperature [...] Read more.
This study used a rapid and simple microwave-assisted synthesis method to grow ZnO nanoneedle arrays on the silicon substrate with the ZnO seed layer. The effects of reaction temperature and time on the lengths of ZnO nanoneedle arrays were investigated. The appropriate temperature programming step can grow the longer ZnO nanoneedle arrays at the same reaction time (25 min), which is 2.08 times higher than without the temperature programming step. The geometry of the ZnO nanoneedle arrays features a gradual decrease from the Si substrate to the surface, which provides an excellent progressive refractive index between Si and air, resulting in excellent antireflection properties over an extensive wavelength range. In addition, the ZnO nanoneedle arrays exhibit a suitable structure for uniform deposition of Ag nanoparticles, which can provide three-dimensional hot spots and surface active sites, resulting in higher surface-enhanced Raman scattering (SERS) enhancement, high uniformity, high reusability, and low detection limit for R6G molecule. The ZnO/Ag nanoneedle arrays can also reveal a superior SERS-active substrate detecting amoxicillin (10−8 M). These results are promising for applying the SERS technique for rapid low-concentration determination in different fields. Full article
(This article belongs to the Special Issue Low-Dimensional Semiconductor Materials: Fabrication, Characterization and Applications)
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13 pages, 2017 KiB  
Article
Topological Insulator Films for Terahertz Photonics
by Kirill A. Kuznetsov, Sergey A. Tarasenko, Polina M. Kovaleva, Petr I. Kuznetsov, Denis V. Lavrukhin, Yury G. Goncharov, Alexander A. Ezhov, Dmitry S. Ponomarev and Galiya Kh. Kitaeva
Nanomaterials 2022, 12(21), 3779; https://doi.org/10.3390/nano12213779 - 26 Oct 2022
Cited by 8 | Viewed by 2471
Abstract
We discuss experimental and theoretical studies of the generation of the third terahertz (THz) frequency harmonic in thin films of Bi2Se3 and Bi2-xSbxTe3-ySey (BSTS) topological insulators (TIs) and the generation of THz radiation [...] Read more.
We discuss experimental and theoretical studies of the generation of the third terahertz (THz) frequency harmonic in thin films of Bi2Se3 and Bi2-xSbxTe3-ySey (BSTS) topological insulators (TIs) and the generation of THz radiation in photoconductive antennas based on the TI films. The experimental results, supported by the developed kinetic theory of third harmonic generation, show that the frequency conversion in TIs is highly efficient because of the linear energy spectrum of the surface carriers and fast energy dissipation. In particular, the dependence of the third harmonic field on the pump field remains cubic up to the pump fields of 100 kV/cm. The generation of THz radiation in TI-based antennas is obtained and described for the pump, with the energy of photons corresponding to the electron transitions to higher conduction bands. Our findings open up possibilities for advancing TI-based films into THz photonics as efficient THz wave generators and frequency converters. Full article
(This article belongs to the Special Issue Low-Dimensional Semiconductor Materials: Fabrication, Characterization and Applications)
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