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Nanomaterials
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Optoelectronic Properties and Applications of Nanomaterials
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Optoelectronic Properties and Applications of Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (30 June 2022) | Viewed by 18773

Special Issue Editors

Prof. Dr. Maurizia Palummo

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Guest Editor
Dipartimento di Fisica and INFN, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy
Interests: novel materials for solar harvesting applications and light-emission; electronic and optical properties; many-body interactions; excitons; first-principles ground and excited states methods DFT MBPT
Prof. Dr. Giacomo Giorgi

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Guest Editor
Dipartimento di Ingegneria Civile ed Ambientale (DICA), Università degli Studi di Perugia, Via Goffredo Duranti, 93, I-06125 Perugia, Italy
Interests: sun-to-energy conversion; density functional theory applications; electronic properties of materials for technological applications; interface/surface chemistry; photocatalysis and H2 storing

Special Issue Information

Dear Colleagues,

Low-dimensional materials, such as quantum dots, nanotubes, nanowires, and 2D materials, are attracting strong interest at both an experimental and theoretical level, for the possibilities they offer to modulate the optoelectronic properties for desired functionalities, thanks to quantum-confinement, low dielectric screening, and a high surface/volume ratio, which make them particularly prone to any external stimulus from strain, to electric fields, and to atomic and molecular doping.

This can create new perspectives in several technological applications, ranging from photonics to energy conversion, with the aim of overcoming the limits of traditional materials currently employed by the industry for the development of next-generation optoelectronic devices.

However, issues still remain for controlling and reproducing growth processes and in the precise characterization of atomic-scale properties, as well as in the rational design of nanomaterials that have to be overcome to allow for real-world applications

In this Research Topic, titled "Optoelectronic Properties and Applications of Nanomaterials”, we aim to collect original research articles, review articles, and perspective views concerning the current status and future developments in the field of the optoelectronic properties of nanomaterials, with particular focus on energy conversion and photonics applications.

The possible topics include (but are not limited to) the fabrication and design of novel nanomaterials, the experimental and theoretical characterization of their   optoelectronic properties, the understanding of the key factors that limit device performances, and the realization of optoelectronic devices.

Prof. Dr. Maurizia Palummo
Prof. Dr. Giacomo Giorgi
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics
  • photovoltaics
  • nanostructures and low-dimensional materials
  • fabrication
  • characterization
  • photonics
  • photocatalysis
  • theoretical methods for electronic and optical properties calculation

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Published Papers (6 papers)

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Research

13 pages, 898 KiB  
Article
Ab Initio Study of Graphene/hBN Van der Waals Heterostructures: Effect of Electric Field, Twist Angles and p-n Doping on the Electronic Properties
by Simone Brozzesi, Claudio Attaccalite, Francesco Buonocore, Giacomo Giorgi, Maurizia Palummo and Olivia Pulci
Nanomaterials 2022, 12(12), 2118; https://doi.org/10.3390/nano12122118 - 20 Jun 2022
Cited by 2 | Viewed by 2439
Abstract
In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near [...] Read more.
In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Fermi level. Small electronic lateral gaps of the order of few meV can appear near the Dirac points K. We further discuss how the bandstructures change applying a perpendicular external electric field, showing how its application lifts the degeneracy of the Dirac cones and, in the twisted case, moves their crossing points away from the Fermi energy. Then, we consider the possibility of co-doping, in an asymmetric way, the two external graphene layers. This is a situation that could be realized in heterostructures deposited on a substrate. We show that the co-doping acts as an effective external electric field, breaking the Dirac cones degeneracy. Finally, our work demonstrates how, by playing with field strength and p-n co-doping, it is possible to tune the small lateral gaps, pointing towards a possible application of C/BN sandwich structures as nano-optical terahertz devices. Full article
(This article belongs to the Special Issue Optoelectronic Properties and Applications of Nanomaterials)
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17 pages, 4265 KiB  
Article
Electrical and Optical Characterization of CsPbCl3 Films around the High-Temperature Phase Transitions
by Mara Bruzzi, Matteo Latino, Naomi Falsini, Nicola Calisi and Anna Vinattieri
Nanomaterials 2022, 12(3), 570; https://doi.org/10.3390/nano12030570 - 7 Feb 2022
Cited by 7 | Viewed by 2240
Abstract
Large-area CsPbCl3 films in the range 0.1–1.5 μm have been grown by radio frequency (RF)-magnetron sputtering on glass substrates by means of a one-step procedure. Three structural phase transitions have been detected, which are associated with hysteresis behavior in the electrical current [...] Read more.
Large-area CsPbCl3 films in the range 0.1–1.5 μm have been grown by radio frequency (RF)-magnetron sputtering on glass substrates by means of a one-step procedure. Three structural phase transitions have been detected, which are associated with hysteresis behavior in the electrical current when measured as a function of temperature in the range 295–330 K. Similarly, photoluminescence (PL) experiments in the same temperature range bring evidence of a non-monotonic shift of the PL peak. Detailed electrical characterizations evidenced how phase transitions are not influencing detrimentally the electrical transport properties of the films. In particular, the activation energy (0.6–0.8 eV) extracted from the temperature-dependent film resistivity does not appear to be correlated with phase changes. A non-linear trend of the photoconductivity response as a function of a ultra violet (UV) 365 nm light emitting diode (LED) power has been interpreted considering the presence of an exponential tail of intragap defects. Thermally stimulated currents after exposure with the same LED measured from room temperature up to 370 K showed no evidence of trapping effects due to intragap states on the electrical transport properties at room temperature of the films. As a consequence, measured photocurrents at room temperature appear to be well reproducible and stable in time, which are attractive features for possible future applications in photodetection. Full article
(This article belongs to the Special Issue Optoelectronic Properties and Applications of Nanomaterials)
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9 pages, 5054 KiB  
Article
Stability and Bandgap Engineering of In1−xGaxSe Monolayer
by Mattia Salomone, Federico Raffone, Michele Re Fiorentin, Francesca Risplendi and Giancarlo Cicero
Nanomaterials 2022, 12(3), 515; https://doi.org/10.3390/nano12030515 - 1 Feb 2022
Cited by 2 | Viewed by 1975
Abstract
Bandgap engineering of semiconductor materials represents a crucial step for their employment in optoelectronics and photonics. It offers the opportunity to tailor their electronic and optical properties, increasing the degree of freedom in designing new devices and widening the range of their possible [...] Read more.
Bandgap engineering of semiconductor materials represents a crucial step for their employment in optoelectronics and photonics. It offers the opportunity to tailor their electronic and optical properties, increasing the degree of freedom in designing new devices and widening the range of their possible applications. Here, we report the bandgap engineering of a layered InSe monolayer, a superior electronic and optical material, by substituting In atoms with Ga atoms. We developed a theoretical understanding of In1−xGaxSe stability and electronic properties in its whole compositional range (x=0−1) through first-principles density functional theory calculations, the cluster expansion method, and kinetic Monte Carlo simulations. Our findings highlight the possibility of modulating the InGaSe bandgap by ≈0.41 eV and reveal that this compound is an excellent candidate to be employed in many optoelectronic and photonic devices. Full article
(This article belongs to the Special Issue Optoelectronic Properties and Applications of Nanomaterials)
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10 pages, 2052 KiB  
Article
The Low-Temperature Photocurrent Spectrum of Monolayer MoSe2: Excitonic Features and Gate Voltage Dependence
by Daniel Vaquero, Juan Salvador-Sánchez, Vito Clericò, Enrique Diez and Jorge Quereda
Nanomaterials 2022, 12(3), 322; https://doi.org/10.3390/nano12030322 - 19 Jan 2022
Cited by 4 | Viewed by 2510
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past [...] Read more.
Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past decade by means of photoluminescence spectroscopy, transmittance spectroscopy, and related techniques; however, the spectral dependence of their electronic response is still not fully characterized. In this work, we investigate the electronic response of exciton transitions in monolayer MoSe2 via low-temperature photocurrent spectroscopy. We identify the spectral features associated with the main exciton and trion transitions, with spectral bandwidths down to 15 meV. We also investigate the effect of the Fermi level on the position and intensity of excitonic spectral features, observing a very strong modulation of the photocurrent, which even undergoes a change in sign when the Fermi level crosses the charge neutrality point. Our results demonstrate the unexploited potential of low-temperature photocurrent spectroscopy for studying excitons in low-dimensional materials, and provide new insight into excitonic transitions in 1L-MoSe2. Full article
(This article belongs to the Special Issue Optoelectronic Properties and Applications of Nanomaterials)
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13 pages, 3678 KiB  
Article
Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation
by Kai Ren, Ruxin Zheng, Peng Xu, Dong Cheng, Wenyi Huo, Jin Yu, Zhuoran Zhang and Qingyun Sun
Nanomaterials 2021, 11(9), 2236; https://doi.org/10.3390/nano11092236 - 30 Aug 2021
Cited by 38 | Viewed by 5140
Abstract
After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to [...] Read more.
After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stability at 300 K. In addition, the Hf2CO2/MN heterostructure has I-type band alignment structure, which can be used as a promising light-emitting device material. The charge transfer between the Hf2CO2 and AlN (or GaN) monolayers is 0.1513 (or 0.0414) |e|. The potential of Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures decreases by 6.445 eV and 3.752 eV, respectively, across the interface. Furthermore, both Hf2CO2/AlN and Hf2CO2/GaN heterostructures have remarkable optical absorption capacity, which further shows the application prospect of the Hf2CO2/MN heterostructure. The study of this work provides theoretical guidance for the design of heterostructures for use as photocatalytic and photovoltaic devices. Full article
(This article belongs to the Special Issue Optoelectronic Properties and Applications of Nanomaterials)
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14 pages, 5228 KiB  
Article
Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process
by Chih-Chiang Wang, Fuh-Sheng Shieu and Han C. Shih
Nanomaterials 2021, 11(5), 1352; https://doi.org/10.3390/nano11051352 - 20 May 2021
Cited by 19 | Viewed by 2909
Abstract
Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that [...] Read more.
Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA–FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi2Se3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10−10 and 0.35 × 10−10 A and high Iphoto/Idark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10−2 and 6.6 × 10−2 s. Under UV light, (In,Sn)-dopedBi2Se3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi2Se3, indicating that (In,Sn)-doped Bi2Se3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi2Se3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi2Se3 has greater potential than undoped Bi2Se3 for use in UV and red-light photodetectors. Full article
(This article belongs to the Special Issue Optoelectronic Properties and Applications of Nanomaterials)
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