Doping engineering has been applied in niobium-doped NiO (NiO:Nb) by adding nitrogen (N) in its structure. The rf-sputtered films were made from a Ni-Nb composite target on unheated substrates at 300 W rf power and 5 mTorr total pressure. The plasma contained 50% Ar and 50% O
2 for the fabrication of the single-doped NiO:Nb film (AΝ film), and N
2 gas for the incorporation of N in the Ni-O-Nb structure. The N
2 in plasma was introduced by keeping constant the flow rates of O
2 and N
2 gasses (O
2/N
2 = 1) and reducing the amount of Ar gas, namely 94% Ar, 3% O
2, and 3% N
2 (film AN1); 50% Ar, 25% O
2, and 25% N
2 (film AN2); and 6% Ar, 47% O
2, and 47% N
2 (film AN3). All films had the single phase of cubic NiO and both Nb and N in the Ni-O structure were revealed by XPS experiments. The roughness of the films was increased with the increase in N in plasma. Post-deposition thermal treatment improved the crystallinity and reduced the structural disorder of the films. The AN2 film was found to be the most transparent of all films, exhibiting the widest band gap, 3.72 eV, and the narrowest Urbach tail states’ width, 313 meV. The AN and the AN2 films were employed to form NiO/TiO
2 heterostructures. The NiO:Nb/TiO
2 and NiO:(Nb,N)/TiO
2 heterostructures exhibited a visible transmittance of around 42% and 75%, respectively, and both showed rectification properties. Upon illumination with UV light, the NiO:(Nb,N)/TiO
2 diode exhibited enhanced photovoltaic performance when compared to the NiO:Nb/TiO
2 solar cell: the short-circuit current densities were 0.2 mA/cm
2 versus 1.4 μA/cm
2 and the open-circuit voltages were 0.5 V versus 0.2 V. The output characteristics of the p-NiO:(Nb,N)/n-TiO
2 UV photovoltaics can be further improved by proper engineering of the individual layers and device processing procedures.
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