Electronic and Optical Properties of Nanostructures

Journal Name	Impact Factor	CiteScore	Launched Year	First Decision (median)	APC
Applied Nano applnano	-	-	2020	17.1 Days	CHF 1000
Applied Sciences applsci	2.5	5.3	2011	17.8 Days	CHF 2400
Materials materials	3.1	5.8	2008	15.5 Days	CHF 2600
Nanomaterials nanomaterials	4.4	8.5	2010	13.8 Days	CHF 2900
Sensors sensors	3.4	7.3	2001	16.8 Days	CHF 2600

14 pages, 9758 KiB

Open AccessArticle

Preparation and Biotoxicity of Coal-Based Carbon Dot Nanomaterials

by Zhenzhou Tian, Jinyao Li, Yanming Miao and Jinzhi Lv

Nanomaterials 2023, 13(24), 3122; https://doi.org/10.3390/nano13243122 - 12 Dec 2023

Cited by 5 | Viewed by 1310

Coal-based Carbon Dots (C-CDs) have gradually become a research focus due to the abundant raw materials and low preparation cost. Still, before coal-based carbon dots are widely used, a systematic biological toxicity study is the basis for the safe utilization of C-CDs. However, [...] Read more.

Coal-based Carbon Dots (C-CDs) have gradually become a research focus due to the abundant raw materials and low preparation cost. Still, before coal-based carbon dots are widely used, a systematic biological toxicity study is the basis for the safe utilization of C-CDs. However, the level of toxicity and the mechanism of toxicity of C-CDs for organisms are still unclear. To ensure the safe utilization of C-CDs, the present study investigated C-CD nanomaterials as stressors to probe their biotoxic effects on plant, bacterial, and animal cells as well as the photocatalytic oxidative properties of C-CDs. The results showed that low concentrations of C-CDs could promote various growth indicators of wheat, and high concentrations of C-CDs had significant inhibitory effects on wheat growth; C-CDs had significant toxic effects on (S. aureus) at specific concentrations and were light-related; meanwhile, at concentrations of 1–5000 μg/mL, C-CDs were almost not toxic to HeLa cells; however, when irradiated at 365 nm, even low concentrations of C-CDs were toxic to cells by the mechanism that C-CDs could generate singlet oxygen (¹O₂) by photocatalytic oxidation under 365 nm excitation light, resulting in enhanced toxicity of C-CDs to cells. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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13 pages, 4666 KiB

Open AccessArticle

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

by Grzegorz Staszczak, Iza Gorczyca, Ewa Grzanka, Julita Smalc-Koziorowska, Grzegorz Targowski and Tadeusz Suski

Materials 2023, 16(23), 7386; https://doi.org/10.3390/ma16237386 - 27 Nov 2023

Cited by 1 | Viewed by 934

Abstract

In order to shift the light emission of nitride quantum structures towards the red color, the technological problem of low In incorporation in InGaN−based heterostructures has to be solved. To overcome this problem, we consider superlattices grown on InGaN buffers with different In [...] Read more.

In order to shift the light emission of nitride quantum structures towards the red color, the technological problem of low In incorporation in InGaN−based heterostructures has to be solved. To overcome this problem, we consider superlattices grown on InGaN buffers with different In content. Based on the comparison of the calculated ab initio superlattice band gaps with the photoluminescence emission energies obtained from the measurements on the specially designed samples grown by metal-organic vapor phase epitaxy, it is shown that by changing the superlattice parameters and the composition of the buffer structures, the light emission can be shifted to lower energies by about 167 nm (0.72 eV) in comparison to the case of a similar type of superlattices grown on GaN substrate. The importance of using superlattices to achieve red emission and the critical role of the InGaN buffer are demonstrated. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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11 pages, 1558 KiB

Open AccessArticle

Auxiliary Diagnostic Signal for Deep-Level Detection

by Il-Ho Ahn, Dong Jin Lee and Deuk Young Kim

Nanomaterials 2023, 13(21), 2866; https://doi.org/10.3390/nano13212866 - 29 Oct 2023

Viewed by 1224

Abstract

We propose and demonstrate that temperature-dependent curve-fitting error values of the Schottky diode I–V curve in the forward regime can be an auxiliary diagnostic signal as the temperature-scan Capacitance DLTS (CDLTS) signals and helps to work time-efficiently with high accuracy when using the [...] Read more.

We propose and demonstrate that temperature-dependent curve-fitting error values of the Schottky diode I–V curve in the forward regime can be an auxiliary diagnostic signal as the temperature-scan Capacitance DLTS (CDLTS) signals and helps to work time-efficiently with high accuracy when using the Laplace Transform (LT)–DLTS or Isothermal Capacitance transient spectroscopy (ICTS) method. Using Be-doped GaAs showing overlapping DLTS signals, we verify that the LT–DLTS or ICTS analysis within a specific temperature range around the characteristic temperature

T_{p e a k}

coincides well with the results of the CDLTS and Fourier Transform DLTS performed within the whole temperature range. In particular, we found that the LT–DLTS signals appeared intensively around

T_{p e a k}

, and we confirmed it with the ICTS result. The occurrence of the curve fitting error signal is attributed to the relatively increased misfit error by the increased thermal emission from the deep-level trap in the case near the

T_{p e a k}

, because the applied transport model excludes defect characteristics. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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17 pages, 5310 KiB

Open AccessArticle

Effect of Composition and Surface Microstructure in Self-Polarized Ferroelectric Polymer Films on the Magnitude of the Surface Potential

by Valentin V. Kochervinskii, Evgeniya L. Buryanskaya, Mstislav O. Makeev, Pavel A. Mikhalev, Dmitry A. Kiselev, Tatiana S. Ilina, Boris V. Lokshin, Aleksandra I. Zvyagina and Gayane A. Kirakosyan

Nanomaterials 2023, 13(21), 2851; https://doi.org/10.3390/nano13212851 - 27 Oct 2023

Cited by 1 | Viewed by 1160

Abstract

The values of the surface potentials of two sides of films of polyvinylidene fluoride, and its copolymers with tetrafluoroethylene and hexafluoropropylene, were measured by the Kelvin probe method. The microstructures of the chains in the surfaces on these sides were evaluated by ATR [...] Read more.

The values of the surface potentials of two sides of films of polyvinylidene fluoride, and its copolymers with tetrafluoroethylene and hexafluoropropylene, were measured by the Kelvin probe method. The microstructures of the chains in the surfaces on these sides were evaluated by ATR IR spectroscopy. It was found that the observed surface potentials differed in the studied films. Simultaneously, it was observed from the IR spectroscopy data that the microstructures of the chains on both sides of the films also differed. It is concluded that the formation of the surface potential in (self-polarized) ferroelectric polymers is controlled by the microstructure of the surface layer. The reasons for the formation of a different microstructure on both sides of the films are suggested on the basis of the general regularities of structure formation in flexible-chain crystallizing polymers. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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11 pages, 4490 KiB

Open AccessArticle

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

by Zhi Yang, Shuai Zhang, Shufang Ma, Yu Shi, Qingming Liu, Xiaodong Hao, Lin Shang, Bin Han, Bocang Qiu and Bingshe Xu

Materials 2023, 16(17), 6068; https://doi.org/10.3390/ma16176068 - 4 Sep 2023

Cited by 1 | Viewed by 1435

Abstract

Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated [...] Read more.

Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO₂-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO₂ capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO₂ layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO₂ layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO₂ and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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11 pages, 4109 KiB

Open AccessCommunication

Asymmetric Plasmonic Moth-Eye Nanoarrays with Side Opening for Broadband Incident-Angle-Insensitive Antireflection and Absorption

by Rong Xia, Yang Li, Song You, Chunhua Lu, Wenbin Xu and Yaru Ni

Materials 2023, 16(17), 5988; https://doi.org/10.3390/ma16175988 - 31 Aug 2023

Viewed by 1033

Abstract

Plasmonic absorbers with broadband angle-insensitive antireflection have attracted intense interests because of its wide applications in optical devices. Hybrid surfaces with multiple different sub-wavelength array units can provide broadened antireflection, while many of these antireflective surfaces only work for specific angles and require [...] Read more.

Plasmonic absorbers with broadband angle-insensitive antireflection have attracted intense interests because of its wide applications in optical devices. Hybrid surfaces with multiple different sub-wavelength array units can provide broadened antireflection, while many of these antireflective surfaces only work for specific angles and require high complexity of nanofabrication. Here, a plasmonic asymmetric nanostructure composed of the moth-eye dielectric nanoarray partially modified with the top Ag nanoshell providing a side opening for broadband incident-angle-insensitive antireflection and absorption, is rationally designed by nanoimprinting lithography and oblique angle deposition. This study illustrates that the plasmonic asymmetric nanostructure not only excites strong plasmonic resonance, but also induces more light entry into the dielectric nanocavity and then enhances the internal scattering, leading to optimized light localization. Hence, the asymmetric nanostructure can effectively enhance light confinement at different incident angles and exhibit better antireflection and the corresponding absorption performance than that of symmetric nanostructure over the visible wavelengths, especially suppressing at least 16.4% lower reflectance in the range of 645–800 nm at normal incidence.Moreover, the reflectance variance of asymmetric nanostructure with the incident angle changing from 5° to 60° is much smaller than that of symmetric nanostructure, making our approach relevant for various applications in photocatalysis, photothermal conversion, and so on. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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12 pages, 3917 KiB

Open AccessCommunication

A High-Performance UVA Photodetector Based on Polycrystalline Perovskite MAPbCl₃/TiO₂ Nanorods Heterojunctions

by Yupeng Zhang, Yannan Zhai, Hui Zhang, Zhaoxin Wang, Yongfeng Zhang, Ruiliang Xu, Shengping Ruan and Jingran Zhou

Sensors 2023, 23(15), 6726; https://doi.org/10.3390/s23156726 - 27 Jul 2023

Cited by 2 | Viewed by 1677

Abstract

The application of TiO₂ nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion. Here, a photodetector based on polycrystalline perovskite MAPbCl₃ [...] Read more.

The application of TiO₂ nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion. Here, a photodetector based on polycrystalline perovskite MAPbCl₃/TiO₂ nanorods heterojunctions has been fabricated to overcome the shortcoming. The structure was composed of horizontal MAPbCl₃ polycrystalline and vertically aligned TiO₂ nanorods array. Many localized depletion regions at the MAPbCl₃/TiO₂ interface can reduce the dark current. The TiO₂/MAPbCl₃ detector shows high performance including a high ratio of light-dark current of about six orders of magnitude, which is much larger than that of the TiO₂ detector. This study indicates the potential in the TiO₂/MAPbCl₃ heterojunction to fabricate high-performance UV detectors. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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19 pages, 4973 KiB

Open AccessReview

Anti-Stokes Photoluminescence in Halide Perovskite Nanocrystals: From Understanding the Mechanism towards Application in Fully Solid-State Optical Cooling

by Nikolay S. Pokryshkin, Vladimir N. Mantsevich and Victor Y. Timoshenko

Nanomaterials 2023, 13(12), 1833; https://doi.org/10.3390/nano13121833 - 9 Jun 2023

Cited by 4 | Viewed by 2387

Abstract

Anti-Stokes photoluminescence (ASPL) is an up-conversion phonon-assisted process of radiative recombination of photoexcited charge carriers when the ASPL photon energy is above the excitation one. This process can be very efficient in nanocrystals (NCs) of metalorganic and inorganic semiconductors with perovskite (Pe) crystal [...] Read more.

Anti-Stokes photoluminescence (ASPL) is an up-conversion phonon-assisted process of radiative recombination of photoexcited charge carriers when the ASPL photon energy is above the excitation one. This process can be very efficient in nanocrystals (NCs) of metalorganic and inorganic semiconductors with perovskite (Pe) crystal structure. In this review, we present an analysis of the basic mechanisms of ASPL and discuss its efficiency depending on the size distribution and surface passivation of Pe-NCs as well as the optical excitation energy and temperature. When the ASPL process is sufficiently efficient, it can result in an escape of most of the optical excitation together with the phonon energy from the Pe-NCs. It can be used in optical fully solid-state cooling or optical refrigeration. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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23 pages, 6562 KiB

Open AccessArticle

Growth of New, Optically Active, Semi-Organic Single Crystals Glycine-Copper Sulphate Doped by Silver Nanoparticles

by Rasmiah Saad A. Almufarij, Alaa El-Deen Ali, Mohamed Elsayed Elba, Howida Eid Okab, Ollaa Moftah Mailoud, Hamida Abdel-Hamid and Howida Abouel Fetouh Elsayed

Appl. Nano 2023, 4(2), 115-137; https://doi.org/10.3390/applnano4020007 - 18 Apr 2023

Viewed by 2474

Abstract

The purpose of this study is to modify all physicochemical properties of glycine–copper sulphate single crystals, such as crystal habits, molar mass, thermal stability, optical activity, and electrical properties. The novelty of this study is growth of glycine–copper sulphate single crystals doped by [...] Read more.

The purpose of this study is to modify all physicochemical properties of glycine–copper sulphate single crystals, such as crystal habits, molar mass, thermal stability, optical activity, and electrical properties. The novelty of this study is growth of glycine–copper sulphate single crystals doped by a low concentration of silver nanoparticles (SNPs) that improved both crystal habits and physicochemical properties. The originality of this work is that trace amounts of SNPs largely increased the crystal size. Crystals have molar stoichiometric formula [glycine]_0.95, [CuSO₄·5H₂O]_0.05 in the absence and presence of silver nanoparticles (SNPs) in different concentrations: 10 ppm, 20 ppm, and 30 ppm. The crystals’ names and abbreviations are: glycine–copper sulphate (GCS), glycine–copper sulphate doped by 10 ppm SNPs (GCSN1), glycine–copper sulphate doped by 20 ppm SNPs (GCSN2), and glycine–copper sulphate doped by 30 ppm SNPs (GCSN3). Dopant silver nanoparticles increased: crystallinity reflecting purity, transparency to UV-Vis. electromagnetic radiation, thermal stability, and melting point of glycine–copper sulphate single crystal. GCSN3 is a super conductor. High thermal conductivity of crystals ranging from 1.1 W·min⁻¹·K⁻¹ to 1.6 W·min⁻¹·K⁻¹ enabled attenuation of electromagnetic radiation and rapid heat dissipation due to good dielectric and polar properties. On rising temperature, AC electrical conductivity and dielectric properties of perfect crystal GCSN3 increased confirmed attenuation of thermal infrared radiation. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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15 pages, 1158 KiB

Open AccessArticle

Optoelectronic Properties of a Cylindrical Core/Shell Nanowire: Effect of Quantum Confinement and Magnetic Field

by Mohamed El-Yadri, Jawad El Hamdaoui, Noreddine Aghoutane, Laura M. Pérez, Sotirios Baskoutas, David Laroze, Pablo Díaz and El Mustapha Feddi

Nanomaterials 2023, 13(8), 1334; https://doi.org/10.3390/nano13081334 - 11 Apr 2023

Cited by 6 | Viewed by 1940

Abstract

This study investigates the effect of quantum size and an external magnetic field on the optoelectronic properties of a cylindrical Al

_{x}

Ga

_{1 - x}

As/GaAs-based core/shell nanowire. We used the one-band effective mass model to describe the Hamiltonian of an interacting [...] Read more.

This study investigates the effect of quantum size and an external magnetic field on the optoelectronic properties of a cylindrical Al

_{x}

Ga

_{1 - x}

As/GaAs-based core/shell nanowire. We used the one-band effective mass model to describe the Hamiltonian of an interacting electron-donor impurity system and employed two numerical methods to calculate the ground state energies: the variational and finite element methods. With the finite confinement barrier at the interface between the core and the shell, the cylindrical symmetry of the system revealed proper transcendental equations, leading to the concept of the threshold core radius. Our results show that the optoelectronic properties of the structure strongly depend on core/shell sizes and the strength of the external magnetic field. We found that the maximum probability of finding the electron occurs in either the core or the shell region, depending on the value of the threshold core radius. This threshold radius separates two regions where physical behaviors undergo changes and the applied magnetic field acts as an additional confinement. Full article

(This article belongs to the Topic Electronic and Optical Properties of Nanostructures)

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