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Photonics
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Group IV Photonics: Advances and Applications
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Group IV Photonics: Advances and Applications

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: 28 February 2025 | Viewed by 12043

Special Issue Editors

Prof. Dr. Alex Yasha Yi

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Guest Editor
Electrical Engineering and Energy Institute, University of Michigan, Ann Arbor, MI, USA
Interests: integrated nanophotonics; integrated nano optoelectronics; intelligent photonics; silicon photonics; plasmonics; metasurface; photonic sensor; photovoltaics; solid state lidar
Prof. Dr. Linjie Zhou

E-Mail Website
Guest Editor
State Key Lab of Advanced Optical Communication Systems and Networks, School of Electronic Information and Electrical Engineering (SEIEE), Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai 200240, China
Interests: silicon photonics; phase change material for photonic devices; III-V and silicon hybrid integration
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Daoxin Dai

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Guest Editor
College of Optical Science and Engineering, Zhejiang University, Zijingang Campus, Hangzhou 310058, China
Interests: silicon photonics; photonic integrated circuits
Dr. Barry James Koch

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Guest Editor
3M, 3M Center, Bldg 201-1N-35, St Paul, MN 55144, USA
Interests: optical devices; optical measurements; measurement automation; machine learning
Dr. Yan Cai

E-Mail Website
Guest Editor
Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai 200050, China
Interests: silicon photonics devices; integrated chips and their applications

Special Issue Information

Dear Colleagues,

The aim of this Special Issue is to provide a comprehensive overview of the recent advances and applications of Group IV photonics. The scope of this issue will encompass the following topics: the development of Group IV photonic devices and materials; optoelectronic properties of Group IV devices and systems; the integration of Group IV materials in photonic devices; light sources on silicon; applications of Group IV photonics in various fields such as telecommunications, sensing, data storage, renewable energy, and biomedicine; programmable photonics; silicon photonics; foundry and manufacturing; integrated quantum photonics; and artificial intelligence chip.

Below are some additional details to consider for this Special Issue:

Introduction: The introduction of the Special Issue can provide a brief overview of Group IV photonics, including its history, current status, and future prospects. It can also highlight the need for continued research and development in this field.

Device Development: This section can focus on the recent advances in the development of Group IV photonic devices, including the design, fabrication, and characterization of these devices. Topics can include the development of Group IV photonic materials, such as silicon, germanium, and carbon; and the optimization of their optoelectronic properties for photonic applications.

Integration: This section can address the challenges and solutions for the integration of Group IV materials in photonic devices. Topics can include the integration of Group IV materials with other materials, such as metals and dielectrics, and the design and fabrication of monolithic photonic integrated circuits.

Applications: This section can explore the various applications of Group IV photonics in fields such as telecommunications, sensing, data storage, renewable energy, and biomedicine. Topics can include the use of Group IV photonics for high-speed data communication, the development of photonic sensors for environmental and biomedical applications, and the integration of Group IV photonics in renewable energy systems.

Prof. Dr. Alex Yasha Yi
Prof. Dr. Linjie Zhou
Prof. Dr. Daoxin Dai
Dr. Barry James Koch
Dr. Yan Cai
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • group IV photonics
  • optoelectronics
  • integration
  • photonic devices
  • silicon photonics
  • germanium photonics
  • carbon photonics
  • renewable energy
  • biomedicine
  • data storage
  • programmable photonics
  • silicon photonics
  • foundry and manufacturing
  • integrated quantum photonics
  • artificial intelligence chip

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Further information on MDPI's Special Issue polices can be found here.

Published Papers (6 papers)

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Research

9 pages, 2760 KiB  
Article
Bandwidth-Tunable Optical Amplifier with Narrowband Filtering Function Enabled by Parity-Time Symmetry at Exceptional Points
by Kunpeng Zhu, Xiaoyan Zhou, Yinxin Zhang, Zhanhua Huang and Lin Zhang
Photonics 2024, 11(12), 1188; https://doi.org/10.3390/photonics11121188 - 19 Dec 2024
Viewed by 625
Abstract
Integrated optical amplifiers are the building blocks of on-chip photonic systems, and they are often accompanied by a narrowband filter to limit noise. In this sense, a bandwidth-tunable optical amplifier with narrowband filtering function is crucial for on-chip optical circuits and radio frequency [...] Read more.
Integrated optical amplifiers are the building blocks of on-chip photonic systems, and they are often accompanied by a narrowband filter to limit noise. In this sense, a bandwidth-tunable optical amplifier with narrowband filtering function is crucial for on-chip optical circuits and radio frequency systems. The intrinsic loss and coupling coefficients between resonator and waveguide inherently limit the bandwidth. The parity-time symmetric coupled microresonators operating at exceptional points enable near zero bandwidth. In this study, we propose a parity-time symmetric coupled microresonators system operating near EPs to achieve a bandwidth of 46.4 MHz, significantly narrower than bandwidth of 600.0 MHz and 743.2 MHz achieved by two all-pass resonators with identical gain/loss coefficients. This system also functions as an optical bandwidth-tunable filter. The bandwidth tuning ranges from 175.7 MHz to 7.8 MHz as gain coefficient adjusts from 0.2 dB/cm to 0.4 dB/cm. Our scheme presents a unique method to obtain narrow bandwidth from two broadband resonators and serves as an optical bandwidth-tunable filter, thereby paving a new avenue for exploring non-Hermitian light manipulation in all-optical integrated devices. Full article
(This article belongs to the Special Issue Group IV Photonics: Advances and Applications)
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9 pages, 3380 KiB  
Communication
Silicon Optical Phased Array Hybrid Integrated with III–V Laser for Grating Lobe-Free Beam Steering
by Jingye Chen, Shi Zhao, Wenlei Li, Xiaobin Wang, Xiang’e Han and Yaocheng Shi
Photonics 2024, 11(10), 952; https://doi.org/10.3390/photonics11100952 - 10 Oct 2024
Viewed by 1099
Abstract
A silicon photonics-based optical phased array (OPA) is promising for realizing solid-state and miniature beam steering. In our work, a 1 × 16 silicon optical phased array (OPA) hybrid integrated with a III–V laser is proposed and demonstrated. The III–V laser chip is [...] Read more.
A silicon photonics-based optical phased array (OPA) is promising for realizing solid-state and miniature beam steering. In our work, a 1 × 16 silicon optical phased array (OPA) hybrid integrated with a III–V laser is proposed and demonstrated. The III–V laser chip is vertically coupled with a silicon OPA chip based on a chirped grating coupler with a large bandwidth. The coupling efficiency reaches up to 90% through utilizing the metal reflector underneath the silicon oxide layer. The one-dimensional antenna array comprising silicon waveguides with half-wavelength spacing enables beam steering with none high-order grating lobes in a 180° field of view. The measured beam steering angle of the hybrid integrated OPA chip is ±25°, without grating lobes, and the suppression ratio of the side-lobes is larger than 9.8 dB with phase calibration. Full article
(This article belongs to the Special Issue Group IV Photonics: Advances and Applications)
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17 pages, 16321 KiB  
Article
Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector
by Hengyang Dong, Yujie Wu, Hongbo Zheng, Pandi Chen, Wenhao Deng, Liuhong Ma, Xinyuan Dong, Zhiyong Duan and Mengke Li
Photonics 2024, 11(10), 906; https://doi.org/10.3390/photonics11100906 - 26 Sep 2024
Cited by 1 | Viewed by 1061
Abstract
A Si-based photodetector is the core device of Si-based optical interconnection; its material and performance are the key factors restricting its development. This paper conducts theoretical research on the issues of lattice mismatch between heterogeneous materials and low device responsivity in Si-based InGaAs [...] Read more.
A Si-based photodetector is the core device of Si-based optical interconnection; its material and performance are the key factors restricting its development. This paper conducts theoretical research on the issues of lattice mismatch between heterogeneous materials and low device responsivity in Si-based InGaAs photodetectors for the 1550 nm optical communication band. The material mismatch issue is addressed through the use of the high-aspect ratio trapping (ART) epitaxial technique, enabling the realization of high-performance Si-based III-V materials. By introducing a dielectric metasurface into the top layer of the structure, the light absorption efficiency is enhanced, realizing broadband optical absorption enhancement for Si-based photodetectors. This paper mainly focuses on designing the optimal parameters of the dielectric metasurface structure based on the finite-difference time-domain (FDTD) Solutions to achieve the performance analysis of a high-responsivity 1550 nm Si-based InGaAs photodetector. The results show that the quantum efficiency of the dielectric metasurface structure is theoretically estimated to be 88.8% and the response rate is 1.11 A/W, which is 2%~16% higher than that of the unetched structure in the whole band. The research results of this paper will provide new ideas for the development of novel, high-performance, and miniaturized Si-based photodetectors and lay a theoretical foundation for Si-based optical interconnection. Full article
(This article belongs to the Special Issue Group IV Photonics: Advances and Applications)
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21 pages, 5489 KiB  
Article
Advancements in CMOS-Compatible Silicon Nitride Optical Modulators via Thin-Film Crystalline or Amorphous Silicon p–n Junctions
by Joaquín Hernández-Betanzos, Marçal Blasco-Solvas, Carlos Domínguez-Horna and Joaquín Faneca
Photonics 2024, 11(8), 762; https://doi.org/10.3390/photonics11080762 - 15 Aug 2024
Viewed by 4678
Abstract
This paper proposes two types of electro-refractive optical modulator structures as a fully CMOS-compatible alternative solution. These modulators leverage the properties of amorphous (top) and crystalline (bottom) silicon films surrounding silicon nitride waveguides operating in the C-band communications range at a wavelength of [...] Read more.
This paper proposes two types of electro-refractive optical modulator structures as a fully CMOS-compatible alternative solution. These modulators leverage the properties of amorphous (top) and crystalline (bottom) silicon films surrounding silicon nitride waveguides operating in the C-band communications range at a wavelength of 1550 nm. Various structures have been demonstrated and explored to compete with or surpass the current state-of-the-art performance of thermal tuners, the most widely used tuning mechanism in silicon nitride integrated photonics. Designs utilizing vertical and lateral p–n junctions with amorphous or crystalline films have been simulated and proposed. For the lateral p–n junctions, modulator lengths to achieve a π phase shift smaller than 287 μm have been demonstrated for the TE mode and that smaller than 1937 μm for the TM mode, reaching 168 μm in the case of a lateral p–n junction that is completely a p-doped region over or under the waveguide for TE, and 1107 μm for TM. Power consumption is higher for the TM modes than for the TE, being in the order of 100 mW for the former and lower than 23 mW for the latter. The modulators exhibit higher losses for amorphous material compared to crystalline, with losses smaller than 10.21 dB and 3.2 dB, respectively. The vertical p–n junctions present a larger footprint than the lateral ones, 5.03 mm for TE and 38.75 mm for TM, with losses lower than 3.16 dB and 3.95 dB, respectively, for the crystalline silicon. Also, their power consumption is on the order of 21 mW for TE and 164 mW for TM. Full article
(This article belongs to the Special Issue Group IV Photonics: Advances and Applications)
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14 pages, 2966 KiB  
Article
Simulation and Analysis of a Near-Perfect Solar Absorber Based on SiO2-Ti Cascade Optical Cavity
by Peng Chen, Yingting Yi, Qianju Song, Zao Yi, Yougen Yi, Shubo Cheng, Jianguo Zhang, Chaojun Tang, Tangyou Sun and Qingdong Zeng
Photonics 2024, 11(7), 604; https://doi.org/10.3390/photonics11070604 - 26 Jun 2024
Viewed by 1461
Abstract
The main development direction for current solar technology is to improve absorption efficiency and stability. To bridge this gap, we design in this paper a structure consisting of two multilayer disc stacks of different radii, one topped by a TiO2 disc and [...] Read more.
The main development direction for current solar technology is to improve absorption efficiency and stability. To bridge this gap, we design in this paper a structure consisting of two multilayer disc stacks of different radii, one topped by a TiO2 disc and the other by a cascade disc stack composed of SiO2-Ti, for use in thermal emitters and solar absorbers. The innovation of our work is the exploitation of multiple Fabry–Perot resonances in SiO2-Ti cascade optical cavities to develop absorber bandwidths while investigating it in the field of thermal emission and many aspects affecting the efficiency of the absorber. The finite difference time domain method (FDTD) results show absorption averages as high as 96.68% with an absorption bandwidth of 2445 nm (A > 90%) at 280 nm–3000 nm solar incidence and even higher weighted averages as high as 98.48% at 1.5 solar air mass (AM) illumination. In order to investigate the physical mechanisms of our designed absorber in a high absorption state, we analyzed the electric field distributions of its four absorption peaks and concluded that its high absorption is mainly caused by the coupling of multiple Fabry–Perot resonance modes in the cascaded optical cavity. While considering this high efficiency, we also investigated the effect of complex environments such as extreme high temperatures and changes in the angle of incidence of the absorber, and the results show that the thermal radiation efficiency of the emitter is 96.79% at an operating temperature of 1700 K, which is higher than its thermal radiation efficiency of 96.38% at an operating temperature of 1500 K, which is a perfect result. On the other hand, we conclude that the designed structure is independent of polarization, while the absorber still has 88.22% absorption at incidence angles of up to 60°, both in transverse electric (TE) and transverse magnetic (TM) modes. The results of this study can help improve the performance of future solar absorbers and expand their application areas. Full article
(This article belongs to the Special Issue Group IV Photonics: Advances and Applications)
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17 pages, 2156 KiB  
Article
Theoretical and Experimental Study of Optical Losses in a Periodic/Quasiperiodic Structure Based on Porous Si-SiO2
by María R. Jiménez-Vivanco, Raúl Herrera, Lizeth Martínez, Francisco Morales, Khashayar Misaghian, Miller Toledo-Solano and J. Eduardo Lugo
Photonics 2023, 10(9), 1009; https://doi.org/10.3390/photonics10091009 - 4 Sep 2023
Cited by 1 | Viewed by 1360
Abstract
This study investigates the reduction of optical losses in periodic/quasiperiodic structures made of porous Si-SiO2 through a dry oxidation process. Due to their unique optical properties, these structures hold great promise for various optoelectronic applications. By carefully engineering the composition and geometry [...] Read more.
This study investigates the reduction of optical losses in periodic/quasiperiodic structures made of porous Si-SiO2 through a dry oxidation process. Due to their unique optical properties, these structures hold great promise for various optoelectronic applications. By carefully engineering the composition and geometry of the structures, we fabricate periodic/quasiperiodic structures on a quartz substrate using an electrochemical anodization technique and subsequently subject them to dry oxidation at two different temperatures. The structure exhibits two localized modes in the transmission and reflection spectra. Unoxidized and oxidized structures’ complex refractive index and filling factors are determined theoretically and experimentally. Optical characterization reveals that the porous Si-SiO2 structures exhibit lower absorption losses and improved transmission than the pure porous silicon structures. Additionally, scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) confirm the presence of porous Si-SiO2 and reduced silicon content. Our study demonstrates that dry oxidation effectively decreases Rayleigh scattering losses, leading to enhanced optical performance and potential applications in efficient optoelectronic devices and systems based on silicon. For instance, periodic/quasiperiodic structures could soon be used as light-emitting devices inside the field of optoelectronics, adding photoluminescent nanoparticles to activate the localized modes. Full article
(This article belongs to the Special Issue Group IV Photonics: Advances and Applications)
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