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Electron. Mater., Volume 5, Issue 4 (December 2024) – 6 articles

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10 pages, 2242 KiB  
Article
Direct Writing of Metal Nanostructures with Focused Helium Ion Beams
by Vladimir Bruevich, Leila Kasaei, Leonard C. Feldman and Vitaly Podzorov
Electron. Mater. 2024, 5(4), 293-302; https://doi.org/10.3390/electronicmat5040018 - 14 Nov 2024
Viewed by 347
Abstract
A helium ion microscope (HIM) with a focused He+-ion beam of variable flux and energy can be used as a tool for local nanoscale surface modification. In this work, we demonstrate a simple but versatile use of the HIM focused He [...] Read more.
A helium ion microscope (HIM) with a focused He+-ion beam of variable flux and energy can be used as a tool for local nanoscale surface modification. In this work, we demonstrate a simple but versatile use of the HIM focused He ion beam to fabricate conducting metallic nano- and microstructures on arbitrary substrates of varied types and shapes by directly patterning pre-deposited initially discontinuous and highly insulating (>10 TΩ/sq.) ultrathin metal films. Gold or silver films, measuring 3 nm in thickness, thermally evaporated on solid substrates have a discontinuous nanocluster morphology. Such highly resistive films can be made locally conductive using moderate doses (2 × 1016–1017 cm−2) of low-energy (30 KeV) ion bombardment. We show that an HIM can be used to directly “draw” Au and Ag conductive lines and other patterns with a variable sheet resistance as low as 10 kΩ/sq. without the use of additional precursors. This relatively straightforward, high-definition technique of direct writing with an ion beam, free from complex in vacuo catalytic or precursor chemistries, opens up new opportunities for directly fabricating elements of conformal metallic nanocircuits (interconnects, resistors, and contacts) on arbitrary organic or inorganic substrates, including those with highly curved surfaces. Full article
(This article belongs to the Special Issue Feature Papers of Electronic Materials—Third Edition)
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44 pages, 16725 KiB  
Review
Microchannel Heat Sinks—A Comprehensive Review
by Usman Ghani, Muhammad Anas Wazir, Kareem Akhtar, Mohsin Wajib and Shahmir Shaukat
Electron. Mater. 2024, 5(4), 249-292; https://doi.org/10.3390/electronicmat5040017 - 6 Nov 2024
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Abstract
An efficient cooling system is necessary for the reliability and safety of modern microchips for a longer life. As microchips become smaller and more powerful, the heat flux generated by these chips per unit area also rises sharply. Traditional cooling techniques are inadequate [...] Read more.
An efficient cooling system is necessary for the reliability and safety of modern microchips for a longer life. As microchips become smaller and more powerful, the heat flux generated by these chips per unit area also rises sharply. Traditional cooling techniques are inadequate to meet the recent cooling requirements of microchips. To meet the current cooling demand of microelectromechanical systems (MEMS) devices and microchips, microchannel heat sink (MCHS) technology is the latest invention, one that can dissipate a significant amount of heat because of its high surface area to volume ratio. This study provides a concise summary of the design, material selection, and performance parameters of the MCHSs that have been developed over the last few decades. The limitations and challenges associated with the different techniques employed by researchers over time to enhance the thermal efficiency of microchannel heat sinks are discussed. The effects on the thermal enhancement factor, Nusselt number, and pressure drop at different Reynold numbers in passive techniques (flow obstruction) i.e., ribs, grooves, dimples, and cavities change in the curvature of MCHSs, are discussed. This study also discusses the increase in heat transfer using nanofluids and how a change in coolant type also significantly affects the thermal performance of MCHSs by obstructing flow. This study provides trends and useful guidelines for researchers to design more effective MCHSs to keep up with the cooling demands of power electronics. Full article
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10 pages, 2268 KiB  
Article
The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility
by Minho Yoon
Electron. Mater. 2024, 5(4), 239-248; https://doi.org/10.3390/electronicmat5040016 - 19 Oct 2024
Viewed by 610
Abstract
In this study, we investigated the density of states extraction method for atomic-deposited ZnO thin-film transistors (TFTs) by analyzing gate-dependent field-effect mobility. The atomic layer deposition (ALD) method offers ultra-thin and smooth ZnO films, but these films suffer from interface and semiconductor defects, [...] Read more.
In this study, we investigated the density of states extraction method for atomic-deposited ZnO thin-film transistors (TFTs) by analyzing gate-dependent field-effect mobility. The atomic layer deposition (ALD) method offers ultra-thin and smooth ZnO films, but these films suffer from interface and semiconductor defects, which lead to disordered localized electronic structures. Hence, to investigate the unstable localized structure of ZnO TFTs, we tried to derive the electronic state relationship by assuming field-effect mobility can be expressed as a gate-dependent Arrhenius relation, and the activation energy in the relation is the required energy for hopping. Following this derived relationship, the DOS of the atomic-deposited ZnO transistor was extracted and found to be consistent with those using temperature-dependent measurements. Moreover, to ensure the proposed method is reliable, we applied methods for the extraction of DOSs of doped ZnO transistors, which show enhanced mobilities with shifted threshold voltages, and the results show that the extraction method is reliable. Thus, we can state that the mobility-based DOS extraction method offers practical benefits for estimating the density of states of disordered transistors using a single transfer characteristic of these devices. Full article
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18 pages, 4511 KiB  
Article
Intrinsic Metal Component-Assisted Microwave Pyrolysis and Kinetic Study of Waste Printed Circuit Boards
by Diyi Jin, Min Zhao, Haochen Zhu, Guangming Li and Wenzhi He
Electron. Mater. 2024, 5(4), 221-238; https://doi.org/10.3390/electronicmat5040015 - 6 Oct 2024
Viewed by 1098
Abstract
Waste printed circuit boards (WPCBs) hold great recycling value, but improper recycling can lead to environmental issues. This study combines pyrolysis and microwave technologies, leveraging the unique phenomenon where metal materials tend to “spark” in a microwave field, to develop a microwave pyrolysis [...] Read more.
Waste printed circuit boards (WPCBs) hold great recycling value, but improper recycling can lead to environmental issues. This study combines pyrolysis and microwave technologies, leveraging the unique phenomenon where metal materials tend to “spark” in a microwave field, to develop a microwave pyrolysis process for WPCBs that incorporates metal fillers. The research analyzes the effects of microwave power, metal filler addition, and pyrolysis time on the efficiency of microwave pyrolysis. It explores the mechanisms of microwave pyrolysis and the pathways of pyrolysis product formation, and the kinetics of the pyrolysis reaction of WPCBs. The results indicate that microwave-assisted pyrolysis greatly improves efficiency. Within the experimental range, the optimal conditions are found to be a microwave power of 1600–1800 W, a metal filler addition of 10%, and a pyrolysis time of 10 min. Under these conditions, the yield of pyrolysis liquid was 12.8%, with approximately 5–12 different components, while the yield of pyrolysis gas was 12.7–13.4%, with about 9–11 different components. Compared to conventional pyrolysis products, the liquid products from microwave pyrolysis are simpler and more advantageous for resource utilization. Theoretical calculations show that the average activation energy for the microwave pyrolysis process is 81.05 kJ/mol, with an average reaction order of 0.93, which is greatly better than the 147.75 kJ/mol of the conventional pyrolysis process. Full article
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17 pages, 6901 KiB  
Article
Analysis of Power Modules Including Phase Change Materials in the Top Interconnection of Semiconductor Devices
by Rabih Khazaka, Rachelle Hanna, Yvan Avenas and Stephane Azzopardi
Electron. Mater. 2024, 5(4), 204-220; https://doi.org/10.3390/electronicmat5040014 - 1 Oct 2024
Viewed by 687
Abstract
Power modules can occasionally be exposed to brief power peaks, causing overheating and premature failure of the power semiconductor devices. In order to overcome this issue without oversizing the module or its cooling system, this study aims to design a new class of [...] Read more.
Power modules can occasionally be exposed to brief power peaks, causing overheating and premature failure of the power semiconductor devices. In order to overcome this issue without oversizing the module or its cooling system, this study aims to design a new class of power modules with integrated Phase Change Material (PCM) in a container serving as a top device interconnection. Simulations and experiments are performed with two organic PCMs, and the interest in adding copper foam is discussed. Under various test conditions, the results show that the simulations agree well with the experiments. Hence, virtual prototyping can be very useful for sizing containers based on a specific mission profile. For a constant selected PCM volume (around 1 cm3/device) and with a convection heat transfer coefficient value of 800 W.m−2.K−1, the solution allows achieving a junction temperature reduction of about 35 °C (erythritol and 90% porosity copper foam) compared to a wire-bonded conventional technique. Repetitive power cycles can be achieved with both materials, but the selection of the PCM should be conducted cautiously based on the mission profile. The two selected organic PCMs show degradation of their latent heat of fusion and mass loss during high-temperature isothermal aging in air above 130 °C. By assuming as endpoint criterion the reduction of energy storage by 50% compared to the initial state, the lifetime of erythritol and RT100 is evaluated to be about 100 and 340 h, respectively, during aging at 150 °C. Full article
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15 pages, 1347 KiB  
Review
Polymer Composites Containing Ionic Liquids: A Study of Electrical Conductivity
by Ahmad Adlie Shamsuri, Siti Nurul Ain Md. Jamil, Mohd Zuhri Mohamed Yusoff and Khalina Abdan
Electron. Mater. 2024, 5(4), 189-203; https://doi.org/10.3390/electronicmat5040013 - 26 Sep 2024
Viewed by 788
Abstract
Polymer composites are engineered materials that combine polymers with diverse fillers to enhance their physicochemical properties. The electrical conductivity of polymer composites is a vital characteristic that significantly broadens their use, particularly in electronic applications. The addition of ionic liquids into polymer composites [...] Read more.
Polymer composites are engineered materials that combine polymers with diverse fillers to enhance their physicochemical properties. The electrical conductivity of polymer composites is a vital characteristic that significantly broadens their use, particularly in electronic applications. The addition of ionic liquids into polymer composites represents a new method to enhance their functional properties, particularly in terms of electrical conductivity. In this brief review, several polymer matrices, conductive fillers, and ionic liquids utilized in polymer composites are categorized. Additionally, the effect of ionic liquids on the electrical conductivity of polymer composites is concisely explained. This review gives brief information that increases the understanding of electrical conductivity in polymer composites containing ionic liquids. In summary, most studies show that adding ionic liquids enhances the electrical conductivity of polymer composites regardless of the polymer matrix or conductive filler type. This enhancement is due to ionic liquids improving filler dispersion and promoting the creation of effective three-dimensional conductive networks within the matrix, thus boosting electron transport and mobility throughout the structure. This review provides new insights into the behavior of ionic liquids in composite systems, highlighting their role in improving properties for advanced applications. It encourages innovation in next-generation conductive materials and assists future research and development of more efficient materials for electronics. Full article
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